FDMQ8205
  • Share:

onsemi FDMQ8205

Manufacturer No:
FDMQ8205
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IC OR CTRLR BRIDGE RECT 12MLP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMQ8205 is part of the GreenBridge™ 2 series of quad MOSFETs designed by onsemi. This component is specifically tailored for bridge applications, ensuring that the input is insensitive to the polarity of the power source. It replaces traditional diode bridges, which often suffer from high power loss, with low RDS(on) dual P-ch and N-ch MOSFETs. This design significantly reduces power loss caused by voltage drops, making it highly efficient for Power over Ethernet (PoE) Power Device (PD) applications. The FDMQ8205 is compatible with the IEEE802.3at PoE standard, meeting detection and classification requirements while minimizing backfeed voltage.

Key Specifications

Parameter Min Typ Max Unit
VDSS (Drain to Source Voltage) - - 80 V
RDS(on) N-ch MOSFET @ VGS = 10 V 26 35 51
RDS(on) P-ch MOSFET @ VGS = -10 V 76 95 147
ID Max (Continuous Drain Current) - - 1.7 A
PD Max (Power Dissipation) - - 2.5 W
TJ Max (Junction Temperature) - - 150 °C
VGS (Gate to Source Voltage) - - ±57 V
Package Type - - WDFN-12 -

Key Features

  • Low Power Loss GreenBridge™ replaces traditional diode bridges.
  • Self-driving circuitry for MOSFETs.
  • Low RDS(on) 80V rated MOSFETs.
  • Maximizes available power and voltage.
  • Eliminates thermal design problems.
  • IEEE802.3at compatible, meeting detection and classification requirements.
  • Works with 2 and 4-pair architecture.
  • Small backfeed voltage.
  • Compact MLP 4.5x5 package.
  • Pb-free and halogen-free.

Applications

  • Power over Ethernet (PoE) Power Device (PD) applications.
  • IP Phones.
  • Network Cameras.
  • Wireless Access Points.
  • Thin Clients.
  • Microcell.
  • Femtocell.

Q & A

  1. What is the FDMQ8205 used for?

    The FDMQ8205 is used in bridge applications, particularly in Power over Ethernet (PoE) Power Device (PD) applications, to replace traditional diode bridges and reduce power loss.

  2. What are the key benefits of using the FDMQ8205?

    The key benefits include low power loss, self-driving circuitry for MOSFETs, low RDS(on), and the ability to maximize available power and voltage while eliminating thermal design problems.

  3. Is the FDMQ8205 compatible with IEEE802.3at PoE standard?
  4. What is the package type of the FDMQ8205?

    The FDMQ8205 comes in a compact WDFN-12 package.

  5. What are the typical applications of the FDMQ8205?

    Typical applications include IP Phones, Network Cameras, Wireless Access Points, Thin Clients, Microcell, and Femtocell.

  6. What is the maximum junction temperature for the FDMQ8205?

    The maximum junction temperature is 150°C.

  7. Is the FDMQ8205 Pb-free and halogen-free?
  8. What is the maximum continuous drain current for the FDMQ8205?

    The maximum continuous drain current is 1.7 A.

  9. What is the maximum power dissipation for the FDMQ8205?

    The maximum power dissipation is 2.5 W.

  10. How does the FDMQ8205 handle backfeed voltage?

    The FDMQ8205 is designed to have a small backfeed voltage, ensuring efficient operation.

Product Attributes

Type:Bridge Rectifier
FET Type:N and P-Channel
Ratio - Input:Output:Bridge (2)
Internal Switch(s):Yes
Delay Time - ON:- 
Delay Time - OFF:- 
Current - Output (Max):- 
Current - Supply:400 µA
Voltage - Supply:57V (Max)
Applications:Power over Ethernet (PoE)
Operating Temperature:-40°C ~ 85°C
Mounting Type:Surface Mount
Package / Case:12-WDFN Exposed Pad
Supplier Device Package:12-MLP (5x4.5)
0 Remaining View Similar

In Stock

$5.96
66

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDMQ8205 FDMQ8205A
Manufacturer onsemi onsemi
Product Status Active Active
Type Bridge Rectifier Bridge Rectifier
FET Type N and P-Channel N and P-Channel
Ratio - Input:Output Bridge (2) Bridge (2)
Internal Switch(s) Yes Yes
Delay Time - ON - -
Delay Time - OFF - -
Current - Output (Max) - -
Current - Supply 400 µA 400 µA
Voltage - Supply 57V (Max) 57V (Max)
Applications Power over Ethernet (PoE) Power over Ethernet (PoE)
Operating Temperature -40°C ~ 85°C -40°C ~ 85°C
Mounting Type Surface Mount Surface Mount
Package / Case 12-WDFN Exposed Pad 12-WDFN Exposed Pad
Supplier Device Package 12-MLP (5x4.5) 12-MLP (5x4.5)

Related Product By Categories

LM5050Q1MK-1/NOPB
LM5050Q1MK-1/NOPB
Texas Instruments
IC OR CTRLR N+1 6SOT
LM74801QDRRRQ1
LM74801QDRRRQ1
Texas Instruments
3-V TO 65-V, AUTOMOTIVE IDEAL DI
LTC4412ES6#TRMPBF
LTC4412ES6#TRMPBF
Analog Devices Inc.
IC OR CTRLR SRC SELECT TSOT23-6
LT4321HUF#TRPBF
LT4321HUF#TRPBF
Analog Devices Inc.
IC OR CTRLR BRIDGE RECT 16QFN
FDMQ8205
FDMQ8205
onsemi
IC OR CTRLR BRIDGE RECT 12MLP
LTC4357HDCB#TRMPBF
LTC4357HDCB#TRMPBF
Analog Devices Inc.
IC OR CTRLR N+1 6DFN
LTC4370IDE#PBF
LTC4370IDE#PBF
Analog Devices Inc.
IC OR CTRLR LOAD SHARE 16DFN
TPS2115ADRBT
TPS2115ADRBT
Texas Instruments
IC OR CTRLR SRC SELECT 8SON
LM74610QDGKTQ1
LM74610QDGKTQ1
Texas Instruments
IC SMART DIODE CTLR 8VSSOP
LM74502DDFR
LM74502DDFR
Texas Instruments
3.2-V TO 65-V INDUSTRIAL RPP CON
LM74502QDDFRQ1
LM74502QDDFRQ1
Texas Instruments
AUTOMOTIVE REVERSE POLARITY PROT
TPS2115ADRBTG4
TPS2115ADRBTG4
Texas Instruments
IC OR CTRLR SRC SELECT 8SON

Related Product By Brand

MMSZ5233BT1G
MMSZ5233BT1G
onsemi
DIODE ZENER 6V 500MW SOD123
BZX55C18_T50A
BZX55C18_T50A
onsemi
DIODE ZENER 18V 500MW DO35
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
NTD3055L104
NTD3055L104
onsemi
MOSFET N-CH 60V 12A DPAK
EMI4183MTTAG
EMI4183MTTAG
onsemi
CMC 100MA 6LN SMD ESD
NCS36000DRG
NCS36000DRG
onsemi
IC PIR DETECTOR CTLR 14SOIC
MC74HC163ADR2G
MC74HC163ADR2G
onsemi
LOG CMOS COUNTER 4BIT SOIC16
MC74HC00ANG
MC74HC00ANG
onsemi
IC GATE NAND 4CH 2-INP 14DIP
NCP1252ADR2G
NCP1252ADR2G
onsemi
IC OFFLINE SWITCH MULT TOP 8SOIC
NSV45035JZT1G
NSV45035JZT1G
onsemi
IC REG CCR 45V 35MA SOT223
NCP302045MNTWG
NCP302045MNTWG
onsemi
IC PWR DRIVER P-CHAN 2:1 31PQFN
NCV1117ST18T3G
NCV1117ST18T3G
onsemi
IC REG LINEAR 1.8V 1A SOT223