FDMQ8205
  • Share:

onsemi FDMQ8205

Manufacturer No:
FDMQ8205
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IC OR CTRLR BRIDGE RECT 12MLP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMQ8205 is part of the GreenBridge™ 2 series of quad MOSFETs designed by onsemi. This component is specifically tailored for bridge applications, ensuring that the input is insensitive to the polarity of the power source. It replaces traditional diode bridges, which often suffer from high power loss, with low RDS(on) dual P-ch and N-ch MOSFETs. This design significantly reduces power loss caused by voltage drops, making it highly efficient for Power over Ethernet (PoE) Power Device (PD) applications. The FDMQ8205 is compatible with the IEEE802.3at PoE standard, meeting detection and classification requirements while minimizing backfeed voltage.

Key Specifications

Parameter Min Typ Max Unit
VDSS (Drain to Source Voltage) - - 80 V
RDS(on) N-ch MOSFET @ VGS = 10 V 26 35 51
RDS(on) P-ch MOSFET @ VGS = -10 V 76 95 147
ID Max (Continuous Drain Current) - - 1.7 A
PD Max (Power Dissipation) - - 2.5 W
TJ Max (Junction Temperature) - - 150 °C
VGS (Gate to Source Voltage) - - ±57 V
Package Type - - WDFN-12 -

Key Features

  • Low Power Loss GreenBridge™ replaces traditional diode bridges.
  • Self-driving circuitry for MOSFETs.
  • Low RDS(on) 80V rated MOSFETs.
  • Maximizes available power and voltage.
  • Eliminates thermal design problems.
  • IEEE802.3at compatible, meeting detection and classification requirements.
  • Works with 2 and 4-pair architecture.
  • Small backfeed voltage.
  • Compact MLP 4.5x5 package.
  • Pb-free and halogen-free.

Applications

  • Power over Ethernet (PoE) Power Device (PD) applications.
  • IP Phones.
  • Network Cameras.
  • Wireless Access Points.
  • Thin Clients.
  • Microcell.
  • Femtocell.

Q & A

  1. What is the FDMQ8205 used for?

    The FDMQ8205 is used in bridge applications, particularly in Power over Ethernet (PoE) Power Device (PD) applications, to replace traditional diode bridges and reduce power loss.

  2. What are the key benefits of using the FDMQ8205?

    The key benefits include low power loss, self-driving circuitry for MOSFETs, low RDS(on), and the ability to maximize available power and voltage while eliminating thermal design problems.

  3. Is the FDMQ8205 compatible with IEEE802.3at PoE standard?
  4. What is the package type of the FDMQ8205?

    The FDMQ8205 comes in a compact WDFN-12 package.

  5. What are the typical applications of the FDMQ8205?

    Typical applications include IP Phones, Network Cameras, Wireless Access Points, Thin Clients, Microcell, and Femtocell.

  6. What is the maximum junction temperature for the FDMQ8205?

    The maximum junction temperature is 150°C.

  7. Is the FDMQ8205 Pb-free and halogen-free?
  8. What is the maximum continuous drain current for the FDMQ8205?

    The maximum continuous drain current is 1.7 A.

  9. What is the maximum power dissipation for the FDMQ8205?

    The maximum power dissipation is 2.5 W.

  10. How does the FDMQ8205 handle backfeed voltage?

    The FDMQ8205 is designed to have a small backfeed voltage, ensuring efficient operation.

Product Attributes

Type:Bridge Rectifier
FET Type:N and P-Channel
Ratio - Input:Output:Bridge (2)
Internal Switch(s):Yes
Delay Time - ON:- 
Delay Time - OFF:- 
Current - Output (Max):- 
Current - Supply:400 µA
Voltage - Supply:57V (Max)
Applications:Power over Ethernet (PoE)
Operating Temperature:-40°C ~ 85°C
Mounting Type:Surface Mount
Package / Case:12-WDFN Exposed Pad
Supplier Device Package:12-MLP (5x4.5)
0 Remaining View Similar

In Stock

$5.96
66

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDMQ8205 FDMQ8205A
Manufacturer onsemi onsemi
Product Status Active Active
Type Bridge Rectifier Bridge Rectifier
FET Type N and P-Channel N and P-Channel
Ratio - Input:Output Bridge (2) Bridge (2)
Internal Switch(s) Yes Yes
Delay Time - ON - -
Delay Time - OFF - -
Current - Output (Max) - -
Current - Supply 400 µA 400 µA
Voltage - Supply 57V (Max) 57V (Max)
Applications Power over Ethernet (PoE) Power over Ethernet (PoE)
Operating Temperature -40°C ~ 85°C -40°C ~ 85°C
Mounting Type Surface Mount Surface Mount
Package / Case 12-WDFN Exposed Pad 12-WDFN Exposed Pad
Supplier Device Package 12-MLP (5x4.5) 12-MLP (5x4.5)

Related Product By Categories

LTC4354IDDB#TRMPBF
LTC4354IDDB#TRMPBF
Analog Devices Inc.
IC OR CTRLR SRC SELECT 8DFN
TPS2113PWR
TPS2113PWR
Texas Instruments
IC OR CTRLR SRC SELECT 8TSSOP
LT4321IUF#TRPBF
LT4321IUF#TRPBF
Analog Devices Inc.
IC OR CTRLR BRIDGE RECT 16QFN
TPS2115APW
TPS2115APW
Texas Instruments
IC OR CTRLR SRC SELECT 8TSSOP
FDMQ8205
FDMQ8205
onsemi
IC OR CTRLR BRIDGE RECT 12MLP
LTC4372HDD#PBF
LTC4372HDD#PBF
Analog Devices Inc.
LOW ICC IDEAL DIODE CONTROLLER W
LM5050Q1MKX-1/NOPB
LM5050Q1MKX-1/NOPB
Texas Instruments
IC OR CTRLR N+1 6SOT
TPS2411PW
TPS2411PW
Texas Instruments
IC OR CTRLR N+1 14TSSOP
LTC4359HMS8#WPBF
LTC4359HMS8#WPBF
Analog Devices Inc.
IDEAL DIODE CNTR W/ REVERSE IN P
LM66200DRLR
LM66200DRLR
Texas Instruments
IC POWER
TPS2413PWRG4
TPS2413PWRG4
Texas Instruments
IC OR CTRLR N+1 8TSSOP
LTC4359HDCB#WTRMPBF
LTC4359HDCB#WTRMPBF
Analog Devices Inc.
IDEAL DIODE CNTR W/ REVERSE IN P

Related Product By Brand

SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
MM3Z13VT1G
MM3Z13VT1G
onsemi
DIODE ZENER 13V 300MW SOD323
NJW21193G
NJW21193G
onsemi
TRANS PNP 250V 16A TO3P-3L
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
FDMS86350ET80
FDMS86350ET80
onsemi
MOSFET N-CH 80V 25A/198A POWER56
NCD9830DBR2G
NCD9830DBR2G
onsemi
IC ADC 8BIT SAR 16TSSOP
NLHV4052DTR2G
NLHV4052DTR2G
onsemi
IC MULTIPLEXER DP4T 16TSSOP
NCV7344AMW3R2G
NCV7344AMW3R2G
onsemi
IC TRANSCEIVER HALF 1/1 8DFNW
NC7SZ57P6X
NC7SZ57P6X
onsemi
IC LOGIC GATE UNIV 2INPUT SC70-6
NCP3232NMNTXG
NCP3232NMNTXG
onsemi
IC REG BUCK ADJUSTABLE 15A 40QFN
NCV4274ADS50R4G
NCV4274ADS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD