Overview
The TPS2412PWR, produced by Texas Instruments, is a power rail controller designed for N+1 and ORing power supply configurations. This controller, in conjunction with an external N-channel MOSFET, emulates the function of a low forward voltage diode, making it ideal for applications requiring redundant power supplies or buses. The TPS2412PWR operates over a wide supply voltage range of 3 V to 16.5 V and controls buses from 0.8 V to 16.5 V. It features linear turnon control, an internal charge pump for the MOSFET, and rapid device turnoff to protect bus integrity. The device is available in an 8-pin TSSOP package and supports industrial temperature ranges from –40°C to 85°C.
Key Specifications
| Parameter | Min | Typ | Max | Unit |
|---|---|---|---|---|
| Input Voltage Range (VDD) | 3 | - | 16.5 | V |
| Operational Voltage Range (A to C) | 0.8 | - | 16.5 | V |
| Operating Temperature Range | –40 | - | 85 | °C |
| Package Type | - | - | TSSOP (8 pins) | - |
| Gate Positive Drive Voltage (V(GATE-A)) | 6 | 7 | 8 | V |
| Turnoff Threshold Voltage | 1 | 3 | 5 | mV |
| Turnoff Delay | 70 | - | - | ns |
| Turnoff Time | 130 | - | - | ns |
| Junction-to-Ambient Thermal Resistance (RθJA) | 110.3 | - | - | °C/W |
Key Features
- Control External FET for N+1 and ORing configurations
- Wide Supply Voltage Range of 3 V to 16.5 V
- Controls Buses From 0.8 V to 16.5 V
- Linear turnon control (TPS2412) or On/Off control method (TPS2413)
- Internal Charge Pump for N-Channel MOSFET
- Rapid Device Turnoff Protects Bus Integrity
- Positive Gate Control on Hot Insertion
- Soft Turnon Reduces Bus Transients
- Industrial Temperature Range: –40°C to 85°C
- 8-Pin TSSOP and SOIC Packages
- Accurate Voltage Sensing and Programmable Turnoff Threshold
- Mosfet Fault Monitoring and Status Pin
Applications
The TPS2412PWR is suitable for a wide range of systems, including:
- Servers (Rackmount and Blade)
- Merchant network and server power supplies
- Battery Backup Units
- Telecom systems
These applications often require N+1 redundant power supplies or redundant power buses, where the TPS2412PWR and an external N-channel MOSFET can emulate a low forward voltage diode, preventing reverse current during faults and hotplug scenarios.
Q & A
- What is the primary function of the TPS2412PWR?
The TPS2412PWR is designed to control an external N-channel MOSFET to emulate a low forward voltage diode, suitable for N+1 and ORing power supply configurations.
- What is the operating temperature range of the TPS2412PWR?
The operating temperature range is from –40°C to 85°C.
- What are the package options for the TPS2412PWR?
The device is available in 8-pin TSSOP and SOIC packages.
- How does the TPS2412PWR control the MOSFET?
The TPS2412PWR uses a linear turnon control method, while the TPS2413 uses an on/off control method.
- What is the purpose of the internal charge pump in the TPS2412PWR?
The internal charge pump provides bias power to the comparators and voltage to drive the gate of the external MOSFET.
- How does the TPS2412PWR protect bus integrity?
The device features rapid device turnoff to protect bus integrity during faults and hotplug scenarios.
- What are the typical applications for the TPS2412PWR?
Typical applications include servers, merchant network and server power supplies, battery backup units, and telecom systems.
- How does the TPS2412PWR handle voltage sensing and turnoff thresholds?
The device features accurate voltage sensing and a programmable turnoff threshold, allowing operation to be tailored for various implementations and bus characteristics.
- What is the significance of the RSET pin in the TPS2412PWR?
The RSET pin is used to program the turnoff threshold by connecting a resistor to ground.
- How does the TPS2412PWR manage thermal issues?
The device has a junction-to-ambient thermal resistance of 110.3°C/W and includes thermal shutdown and hysteresis features.
- What are the key benefits of using the TPS2412PWR over traditional diodes?
The TPS2412PWR offers lower forward voltage drop and the ability to tune the operation, reducing power loss compared to traditional diodes.
