Overview
The DAN222T1G is a Common Cathode Silicon Dual Switching Diode produced by onsemi. This device is specifically designed for ultra high speed switching applications. It is housed in the SOT-416/SC-75 package, which is optimized for low power surface mount applications where board space is limited. The DAN222T1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Reverse Voltage | VR | 80 | Vdc |
| Peak Reverse Voltage | VRM | 80 | Vdc |
| Forward Current | IF | 100 | mAdc |
| Peak Forward Current | IFM | 300 | mAdc |
| Peak Forward Surge Current | IFSM | 2.0 | Adc |
| Power Dissipation | PD | 150 | mW |
| Junction Temperature | TJ | 150 | °C |
| Storage Temperature Range | Tstg | -55 to +150 | °C |
| Reverse Voltage Leakage Current | IR | 0.1 | μAdc |
| Forward Voltage | VF | 1.2 | Vdc |
| Reverse Breakdown Voltage | VR | 80 | Vdc |
| Diode Capacitance | CD | 3.5 | pF |
| Reverse Recovery Time | trr | 4.0 | ns |
Key Features
- Fast reverse recovery time (trr) of 4.0 ns, making it suitable for ultra high speed switching applications.
- Low diode capacitance (CD) of 3.5 pF, which helps in reducing switching times and improving overall circuit performance.
- AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance for automotive and other stringent applications.
- Pb-Free, Halogen Free/BFR Free, and RoHS compliant, aligning with environmental regulations.
- Housed in the SOT-416/SC-75 package, ideal for low power surface mount applications where board space is limited.
Applications
- Ultra high speed switching applications, such as in telecommunications, computing, and industrial control systems.
- Automotive systems, including those requiring AEC-Q101 qualification and PPAP capability.
- General purpose switching and rectification in various electronic circuits.
- Low power surface mount applications where compact size and high performance are critical.
Q & A
- What is the DAN222T1G diode used for?
The DAN222T1G is used in ultra high speed switching applications, including telecommunications, computing, and industrial control systems, as well as in automotive systems.
- What is the maximum reverse voltage of the DAN222T1G?
The maximum reverse voltage (VR) of the DAN222T1G is 80 Vdc.
- What is the forward current rating of the DAN222T1G?
The forward current (IF) rating of the DAN222T1G is 100 mA dc.
- What is the reverse recovery time of the DAN222T1G?
The reverse recovery time (trr) of the DAN222T1G is 4.0 ns.
- Is the DAN222T1G RoHS compliant?
Yes, the DAN222T1G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
- What package type is the DAN222T1G available in?
The DAN222T1G is housed in the SOT-416/SC-75 package.
- What is the junction temperature range of the DAN222T1G?
The junction temperature (TJ) range of the DAN222T1G is up to 150°C.
- Is the DAN222T1G suitable for automotive applications?
Yes, the DAN222T1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other stringent applications.
- What is the diode capacitance of the DAN222T1G?
The diode capacitance (CD) of the DAN222T1G is 3.5 pF.
- What is the storage temperature range of the DAN222T1G?
The storage temperature range (Tstg) of the DAN222T1G is -55 to +150°C.
