CAT24C512WE-GT3
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onsemi CAT24C512WE-GT3

Manufacturer No:
CAT24C512WE-GT3
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IC EEPROM 512KBIT I2C 1MHZ 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CAT24C512WE-GT3 is a 512 kb Serial CMOS EEPROM produced by ON Semiconductor. This device is internally organized as 65,536 words of 8 bits each, providing a substantial storage capacity for various applications. It supports the Standard (100 kHz), Fast (400 kHz), and Fast-Plus (1 MHz) I2C protocol, making it versatile for different system requirements. The CAT24C512WE-GT3 features a 128-byte page write buffer and includes hardware write protection for the entire memory, ensuring data integrity and security. The device is designed with low power CMOS technology and offers high reliability with 1,000,000 program/erase cycles and 100-year data retention.

Key Specifications

Parameter Min Max Units
Storage Temperature –65 +150 °C
Voltage on any Pin with Respect to Ground –0.5 +6.5 V
Supply Voltage Range 1.8 5.5 V
Read Current (fSCL = 400 kHz/1 MHz) 1 mA
Write Current (VCC = 1.8 V) 1.8 mA
Standby Current (TA = –40°C to +85°C) 2 μA
Program/Erase Cycles 1,000,000 Cycles
Data Retention 100 Years
Clock Frequency (Standard) 100 kHz
Clock Frequency (Fast) 400 kHz
Clock Frequency (Fast-Plus) 1,000 kHz

Key Features

  • Supports Standard, Fast, and Fast-Plus I2C Protocol
  • 1.8 V to 5.5 V Supply Voltage Range
  • 128-Byte Page Write Buffer
  • Hardware Write Protection for Entire Memory
  • Schmitt Triggers and Noise Suppression Filters on I2C Bus Inputs (SCL and SDA)
  • Low Power CMOS Technology
  • 1,000,000 Program/Erase Cycles
  • 100 Year Data Retention
  • Industrial and Extended Temperature Range
  • Available in 8-pin PDIP, SOIC, TSSOP, MSOP, 8-pad UDFN, and 8-ball WLCSP Packages
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant
  • On-Chip ECC (Error Correction Code) for high reliability applications

Applications

The CAT24C512WE-GT3 is suitable for a wide range of applications requiring non-volatile memory, including:

  • Industrial Control Systems
  • Automotive Systems
  • Medical Devices
  • Consumer Electronics
  • Communication Devices
  • Any system requiring reliable and durable non-volatile memory

Q & A

  1. What is the storage capacity of the CAT24C512WE-GT3?

    The CAT24C512WE-GT3 has a storage capacity of 512 kb, organized as 65,536 words of 8 bits each.

  2. What I2C protocols does the CAT24C512WE-GT3 support?

    The device supports Standard (100 kHz), Fast (400 kHz), and Fast-Plus (1 MHz) I2C protocols.

  3. What is the supply voltage range for the CAT24C512WE-GT3?

    The supply voltage range is from 1.8 V to 5.5 V.

  4. How many program/erase cycles can the CAT24C512WE-GT3 endure?

    The device can endure up to 1,000,000 program/erase cycles.

  5. What is the data retention period of the CAT24C512WE-GT3?

    The data retention period is 100 years.

  6. What types of packages are available for the CAT24C512WE-GT3?

    The device is available in 8-pin PDIP, SOIC, TSSOP, MSOP, 8-pad UDFN, and 8-ball WLCSP packages.

  7. Is the CAT24C512WE-GT3 RoHS compliant?
  8. How does the hardware write protection work on the CAT24C512WE-GT3?

    Write operations can be inhibited by taking the WP pin High, which protects the entire memory.

  9. What is the purpose of the on-chip ECC in the CAT24C512WE-GT3?

    The on-chip ECC (Error Correction Code) makes the device suitable for high reliability applications by correcting one bit error in 4 data bytes.

  10. Can multiple CAT24C512WE-GT3 devices be connected to the same I2C bus?

Product Attributes

Memory Type:Non-Volatile
Memory Format:EEPROM
Technology:EEPROM
Memory Size:512Kb (64K x 8)
Memory Interface:I²C
Clock Frequency:1 MHz
Write Cycle Time - Word, Page:5ms
Access Time:900 ns
Voltage - Supply:1.8V ~ 5.5V
Operating Temperature:-40°C ~ 125°C (TA)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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Similar Products

Part Number CAT24C512WE-GT3 CAT24C512WI-GT3 CAT24C512YE-GT3
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Active
Memory Type Non-Volatile Non-Volatile Non-Volatile
Memory Format EEPROM EEPROM EEPROM
Technology EEPROM EEPROM EEPROM
Memory Size 512Kb (64K x 8) 512Kb (64K x 8) 512Kb (64K x 8)
Memory Interface I²C I²C I²C
Clock Frequency 1 MHz 1 MHz 1 MHz
Write Cycle Time - Word, Page 5ms 5ms 5ms
Access Time 900 ns 900 ns 900 ns
Voltage - Supply 1.8V ~ 5.5V 1.8V ~ 5.5V 1.8V ~ 5.5V
Operating Temperature -40°C ~ 125°C (TA) -40°C ~ 85°C (TA) -40°C ~ 85°C (TA)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package 8-SOIC 8-SOIC 8-TSSOP

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