Overview
The BDW47G is a PNP Darlington power transistor manufactured by ON Semiconductor. This transistor is part of a series of medium-power silicon Darlington transistors designed for general-purpose and low-speed switching applications. The BDW47G is known for its high DC current gain and low collector-emitter saturation voltage, making it suitable for a variety of power switching and amplification tasks.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 100 | Vdc |
| Collector-Base Voltage | VCB | 100 | Vdc |
| Emitter-Base Voltage | VEB | 5.0 | Vdc |
| Collector Current | IC | 15 | Adc |
| Base Current | IB | 0.5 | Adc |
| Total Device Dissipation @ TC = 25°C | PD | 85 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | −55 to +150 | °C |
| Thermal Resistance, Junction-to-Case | RJC | 1.47 | °C/W |
| Transition Frequency | ft | 4 MHz | |
| Collector Capacitance | Cc | 300 pF | |
| Forward Current Transfer Ratio (hFE) | hFE | 2500 (typ) @ IC = 5.0 Adc | |
| Package | TO-220AB |
Key Features
- High DC Current Gain: hFE = 2500 (typ) @ IC = 5.0 Adc
- Low Collector Emitter Saturation Voltage: VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc, 3.0 Vdc (max) @ IC = 10.0 Adc
- Monolithic Construction with Built-In Base Emitter Shunt Resistors
- TO-220AB Compact Package
- Pb-Free and RoHS Compliant
- Collector Emitter Sustaining Voltage: VCEO(sus) = 100 Vdc (min)
Applications
The BDW47G is designed for general-purpose and low-speed switching applications. It is suitable for use in various power switching and amplification tasks, including but not limited to:
- Power supplies and voltage regulators
- Motor control and drive circuits
- Relay and solenoid drivers
- Audio amplifiers and other high-current applications
Q & A
- What is the collector-emitter voltage rating of the BDW47G transistor?
The collector-emitter voltage rating of the BDW47G transistor is 100 Vdc.
- What is the maximum collector current of the BDW47G transistor?
The maximum collector current of the BDW47G transistor is 15 Adc.
- What is the typical DC current gain (hFE) of the BDW47G transistor?
The typical DC current gain (hFE) of the BDW47G transistor is 2500 @ IC = 5.0 Adc.
- What is the collector-emitter saturation voltage of the BDW47G transistor?
The collector-emitter saturation voltage of the BDW47G transistor is 2.0 Vdc (max) @ IC = 5.0 Adc and 3.0 Vdc (max) @ IC = 10.0 Adc.
- What type of package does the BDW47G transistor use?
The BDW47G transistor uses a TO-220AB compact package.
- Is the BDW47G transistor Pb-Free and RoHS compliant?
Yes, the BDW47G transistor is Pb-Free and RoHS compliant.
- What is the operating and storage junction temperature range of the BDW47G transistor?
The operating and storage junction temperature range of the BDW47G transistor is −55 to +150 °C.
- What is the thermal resistance, junction-to-case, of the BDW47G transistor?
The thermal resistance, junction-to-case, of the BDW47G transistor is 1.47 °C/W.
- What are some common applications of the BDW47G transistor?
The BDW47G transistor is commonly used in power supplies, motor control circuits, relay and solenoid drivers, and audio amplifiers.
- What is the transition frequency of the BDW47G transistor?
The transition frequency of the BDW47G transistor is 4 MHz.
