BC847AMTF
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onsemi BC847AMTF

Manufacturer No:
BC847AMTF
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 45V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847AMTF is an NPN general-purpose bipolar transistor produced by Onsemi. It is part of the BC847 series, which includes several variants with different current gain classifications. This transistor is designed for a wide range of applications, including switching and amplifier circuits. The BC847AMTF is packaged in a small SOT-23 (TO-236AB) surface-mounted device (SMD) plastic package, making it suitable for compact and efficient designs.

Key Specifications

Parameter Value Unit
Collector-Base Breakdown Voltage (VBRCBO) 80 V
Collector-Emitter Breakdown Voltage (VBRCEO) 45 V
Emitter-Base Breakdown Voltage (VBREBO) 6.0 V
Collector Current (IC) 100 mA
Junction Temperature (TJ) 150 °C
Storage Temperature Range (TSTG) -65 to +150 °C
Power Dissipation (PD) 310 mW
Thermal Resistance, Junction-to-Ambient (RθJA) 403 °C/W
DC Current Gain (hFE) 110 ~ 220 (Class A) -
Collector-Emitter Saturation Voltage (VCE(sat)) 0.25 ~ 0.6 V (IC = 10 mA, IB = 0.5 mA) V
Base-Emitter Saturation Voltage (VBE(sat)) 0.7 ~ 0.9 V (IC = 10 mA, IB = 0.5 mA) V
Base-Emitter On Voltage (VBE(on)) 580 ~ 660 mV (IC = 2 mA, VCE = 5 V) mV
Current Gain Bandwidth Product (fT) 300 MHz (VCE = 5 V, IC = 10 mA, f = 100 MHz) MHz
Output Capacitance (Cob) 4.5 pF (VCB = 10 V, f = 1 MHz) pF

Key Features

  • General-Purpose Transistor: Suitable for a wide range of applications including switching and amplifier circuits.
  • Compact Packaging: SOT-23 (TO-236AB) surface-mounted device (SMD) plastic package, ideal for space-efficient designs.
  • Low Noise: The BC847 series, particularly the BC850, is noted for its low noise characteristics.
  • High Current Gain: Available in various current gain classifications (A, B, C), providing flexibility in design.
  • High Breakdown Voltages: Collector-Base, Collector-Emitter, and Emitter-Base breakdown voltages ensure robust operation.
  • Wide Operating Temperature Range: Junction temperature up to 150°C and storage temperature range from -65°C to +150°C.

Applications

  • Switching Circuits: Ideal for use in switching applications due to its high current gain and low saturation voltage.
  • Amplifier Circuits: Suitable for amplifier applications requiring low noise and high current gain.
  • Automotive Electronics: Can be used in various automotive electronic systems due to its robustness and wide operating temperature range.
  • Consumer Electronics: Commonly used in consumer electronic devices such as audio equipment, power supplies, and control circuits.
  • Industrial Control Systems: Used in industrial control systems for its reliability and performance in harsh environments.

Q & A

  1. What is the BC847AMTF transistor used for?

    The BC847AMTF is used in switching and amplifier applications due to its high current gain and low noise characteristics.

  2. What is the package type of the BC847AMTF transistor?

    The BC847AMTF is packaged in a SOT-23 (TO-236AB) surface-mounted device (SMD) plastic package.

  3. What is the maximum collector current of the BC847AMTF transistor?

    The maximum collector current is 100 mA.

  4. What is the junction temperature range of the BC847AMTF transistor?

    The junction temperature range is up to 150°C.

  5. What are the breakdown voltages of the BC847AMTF transistor?

    The collector-base breakdown voltage is 80 V, the collector-emitter breakdown voltage is 45 V, and the emitter-base breakdown voltage is 6.0 V.

  6. What is the current gain (hFE) of the BC847AMTF transistor?

    The current gain (hFE) for the BC847AMTF (Class A) is between 110 and 220.

  7. What is the collector-emitter saturation voltage of the BC847AMTF transistor?

    The collector-emitter saturation voltage is between 0.25 and 0.6 V at IC = 10 mA and IB = 0.5 mA.

  8. What is the base-emitter on voltage of the BC847AMTF transistor?

    The base-emitter on voltage is between 580 and 660 mV at IC = 2 mA and VCE = 5 V.

  9. What is the current gain bandwidth product of the BC847AMTF transistor?

    The current gain bandwidth product is 300 MHz at VCE = 5 V, IC = 10 mA, and f = 100 MHz.

  10. What are some common applications of the BC847AMTF transistor?

    Common applications include switching circuits, amplifier circuits, automotive electronics, consumer electronics, and industrial control systems.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:110 @ 2mA, 5V
Power - Max:310 mW
Frequency - Transition:300MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
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Similar Products

Part Number BC847AMTF BC847BMTF
Manufacturer onsemi onsemi
Product Status Active Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 310 mW 310 mW
Frequency - Transition 300MHz 300MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3

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