Overview
The BC847AM3T5G is a general-purpose NPN silicon transistor manufactured by onsemi. This transistor is designed for low-power surface mount applications and is housed in the SOT-723 package. It is a Pb-Free device, making it compliant with current environmental regulations. The BC847AM3T5G is suitable for a wide range of general-purpose amplifier applications due to its robust electrical characteristics and reliability.
Key Specifications
Parameter | Symbol | Max Unit |
---|---|---|
Collector-Emitter Voltage | VCEO | 45 Vdc |
Collector-Base Voltage | VCBO | 50 Vdc |
Emitter-Base Voltage | VEBO | 6.0 Vdc |
Collector Current - Continuous | IC | 100 mAdc |
Total Device Dissipation, FR-4 Board | PD | 260 mW |
Thermal Resistance, Junction-to-Ambient | RθJA | 480 °C/W |
DC Current Gain (IC = 10 mA, VCE = 5.0 V) | hFE | 200 - 450 |
Collector-Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) | VCE(sat) | 0.25 - 0.6 V |
Base-Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) | VBE(sat) | 0.7 - 0.9 V |
Current-Gain - Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) | fT | 100 MHz |
Output Capacitance (VCB = 10 V, f = 1.0 MHz) | Cobo | 4.5 pF |
Key Features
- Pb-Free Device: Compliant with current environmental regulations.
- General Purpose Amplifier: Suitable for a wide range of amplifier applications.
- Low Power Surface Mount: Housed in the SOT-723 package, ideal for low-power surface mount applications.
- High ESD Rating: Human Body Model: >4000 V, Machine Model: >400 V.
- AEC-Q101 Qualified: Meets automotive and other stringent application requirements.
- Moisture Sensitivity Level 1: Ensures reliability in various environmental conditions.
Applications
- General Purpose Amplifiers: Suitable for various amplifier circuits in electronic devices.
- Automotive Electronics: AEC-Q101 qualified, making it suitable for automotive applications.
- Consumer Electronics: Used in a variety of consumer electronic devices requiring reliable and efficient transistor performance.
- Industrial Control Systems: Can be used in industrial control systems where reliability and durability are crucial.
Q & A
- What is the maximum collector-emitter voltage for the BC847AM3T5G transistor?
The maximum collector-emitter voltage (VCEO) is 45 Vdc.
- What is the continuous collector current rating for this transistor?
The continuous collector current (IC) is 100 mAdc.
- Is the BC847AM3T5G transistor Pb-Free?
- What is the thermal resistance, junction-to-ambient for this transistor?
The thermal resistance, junction-to-ambient (RθJA) is 480 °C/W.
- What is the DC current gain range for the BC847AM3T5G?
The DC current gain (hFE) ranges from 200 to 450 at IC = 10 mA and VCE = 5.0 V.
- What is the collector-emitter saturation voltage for this transistor?
The collector-emitter saturation voltage (VCE(sat)) is between 0.25 and 0.6 V at IC = 100 mA and IB = 5.0 mA.
- What is the base-emitter saturation voltage for the BC847AM3T5G?
The base-emitter saturation voltage (VBE(sat)) is between 0.7 and 0.9 V at IC = 100 mA and IB = 5.0 mA.
- What is the current-gain-bandwidth product for this transistor?
The current-gain-bandwidth product (fT) is 100 MHz at IC = 10 mA and VCE = 5.0 Vdc.
- What is the output capacitance of the BC847AM3T5G?
The output capacitance (Cobo) is 4.5 pF at VCB = 10 V and f = 1.0 MHz.
- Is the BC847AM3T5G suitable for automotive applications?