BC639G
  • Share:

onsemi BC639G

Manufacturer No:
BC639G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 80V 1A TO92
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC639G is an NPN bipolar transistor produced by onsemi, designed for use in industrial and consumer applications. This transistor is housed in the TO-92 package, which is suitable for medium power applications. The BC639G is a Pb-Free device, aligning with modern environmental standards.

Key Specifications

Characteristic Symbol Value Unit
Collector - Emitter Voltage VCEO 80 Vdc
Collector - Base Voltage VCBO 80 Vdc
Emitter - Base Voltage VEBO 5.0 Vdc
Collector Current - Continuous IC 1.0 Adc
Total Device Dissipation @ TA = 25°C PD 625 mW
Total Device Dissipation @ TC = 25°C PD 800 mW
Operating and Storage Junction Temperature Range TJ, Tstg -55 to +150 °C
Thermal Resistance, Junction-to-Ambient RθJA 200 °C/W
Thermal Resistance, Junction-to-Case RθJC 83.3 °C/W
DC Current Gain (IC = 5.0 mA, VCE = 2.0 V) hFE 40 - 160
Collector - Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) VCE(sat) 0.5 Vdc
Base - Emitter On Voltage (IC = 500 mA, VCE = 2.0 V) VBE(on) 1.0 Vdc
Current Gain - Bandwidth Product (IC = 50 mA, VCE = 2.0 V, f = 100 MHz) fT 200 MHz

Key Features

  • Pb-Free Package: Compliant with environmental regulations, making it suitable for modern applications.
  • High Current Capability: Continuous collector current of up to 1.0 A, making it suitable for medium power applications.
  • Wide Operating Temperature Range: Operating and storage junction temperature range from -55°C to +150°C.
  • High DC Current Gain: hFE ranges from 40 to 160, ensuring reliable amplification.
  • Low Saturation Voltage: VCE(sat) of 0.5 V, reducing power losses in switching applications.
  • Compact TO-92 Package: Suitable for a variety of applications where space is limited.

Applications

  • Industrial Applications: Suitable for use in industrial control systems, power supplies, and other high-current applications.
  • Consumer Electronics: Used in various consumer electronic devices such as audio amplifiers, switching regulators, and motor control circuits.
  • Automotive Systems: Can be used in automotive systems for power management and control.
  • General Purpose Amplification: Ideal for general-purpose amplification and switching applications due to its high current and voltage ratings.

Q & A

  1. What is the maximum collector-emitter voltage of the BC639G transistor?

    The maximum collector-emitter voltage (VCEO) is 80 Vdc.

  2. What is the continuous collector current rating of the BC639G?

    The continuous collector current (IC) is rated at 1.0 Adc.

  3. What is the thermal resistance, junction-to-ambient of the BC639G?

    The thermal resistance, junction-to-ambient (RθJA) is 200 °C/W.

  4. What is the DC current gain range of the BC639G?

    The DC current gain (hFE) ranges from 40 to 160.

  5. What is the collector-emitter saturation voltage of the BC639G?

    The collector-emitter saturation voltage (VCE(sat)) is 0.5 Vdc.

  6. Is the BC639G Pb-Free?

    Yes, the BC639G is available in a Pb-Free package.

  7. What is the operating temperature range of the BC639G?

    The operating and storage junction temperature range is from -55°C to +150°C.

  8. What package type does the BC639G use?

    The BC639G is housed in the TO-92 package.

  9. Is the BC639G suitable for high-frequency applications?

    The current gain-bandwidth product (fT) is 200 MHz, making it suitable for high-frequency applications.

  10. Is the BC639G still in production?

    No, the BC639G is listed as obsolete by onsemi and other suppliers.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:625 mW
Frequency - Transition:200MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 Long Body
Supplier Device Package:TO-92 (TO-226)
0 Remaining View Similar

In Stock

-
253

Please send RFQ , we will respond immediately.

Same Series
BC637G
BC637G
TRANS NPN 60V 1A TO92
BC639-16ZL1G
BC639-16ZL1G
TRANS NPN 80V 1A TO92
BC639RL1G
BC639RL1G
TRANS NPN 80V 1A TO92
BC639ZL1G
BC639ZL1G
TRANS NPN 80V 1A TO92
BC637RL1G
BC637RL1G
TRANS NPN 60V 1A TO92

Similar Products

Part Number BC639G BC637G BC638G BC639
Manufacturer onsemi onsemi onsemi Fairchild Semiconductor
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN NPN PNP NPN
Current - Collector (Ic) (Max) 1 A 1 A 500 mA 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 60 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V
Power - Max 625 mW 625 mW 625 mW 625 mW
Frequency - Transition 200MHz 200MHz 150MHz 200MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92 (TO-226) TO-92 (TO-226) TO-92 (TO-226) TO-92 (TO-226)

Related Product By Categories

BC857W,115
BC857W,115
Nexperia USA Inc.
TRANS PNP 45V 0.1A SOT323
BCV26
BCV26
onsemi
TRANS PNP DARL 30V 1.2A SOT23-3
TIP35CW
TIP35CW
STMicroelectronics
TRANS NPN 100V 25A TO247-3
BC846BWE6327
BC846BWE6327
Infineon Technologies
TRANS NPN 65V 0.1A SOT323
BC857C/DG/B4235
BC857C/DG/B4235
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BUL128D-B
BUL128D-B
STMicroelectronics
TRANS NPN 400V 4A TO220
BCP53-10T115
BCP53-10T115
NXP USA Inc.
TRANS PNP 80V 1A SOT223
2N2907AE4
2N2907AE4
Microchip Technology
TRANS PNP 60V 0.6A TO18
BU508AFTBTU
BU508AFTBTU
onsemi
TRANS NPN 700V 5A TO3PF
BCP56-10-QX
BCP56-10-QX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BC807-25-QVL
BC807-25-QVL
Nexperia USA Inc.
TRANS PNP 45V 0.5A TO236AB
PHD13005AD,127
PHD13005AD,127
NXP USA Inc.
TRANS NPN 700V 4A DPAK

Related Product By Brand

BAW56LT3G
BAW56LT3G
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
MMSZ5267BT1G
MMSZ5267BT1G
onsemi
DIODE ZENER 75V 500MW SOD123
MMSZ4690T1G
MMSZ4690T1G
onsemi
DIODE ZENER 5.6V 500MW SOD123
MJD44H11G
MJD44H11G
onsemi
TRANS NPN 80V 8A DPAK
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
ISL9V5036S3ST_SB82026C
ISL9V5036S3ST_SB82026C
onsemi
INTEGRATED CIRCUIT
NCV7344AMW3R2G
NCV7344AMW3R2G
onsemi
IC TRANSCEIVER HALF 1/1 8DFNW
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
LV8711T-TLM-H
LV8711T-TLM-H
onsemi
IC MTR DRV BIPLR 2.7-5.5V 24SSOP
MAX809SQ232T1G
MAX809SQ232T1G
onsemi
IC SUPERVISOR 1 CHANNEL SC70-3
LM385Z-2.5RPG
LM385Z-2.5RPG
onsemi
IC VREF SHUNT 3% TO92-3
FODM217CR2V
FODM217CR2V
onsemi
OPTOCOUPLER PHOTOTRANS MFP4