BC639G
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onsemi BC639G

Manufacturer No:
BC639G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 80V 1A TO92
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC639G is an NPN bipolar transistor produced by onsemi, designed for use in industrial and consumer applications. This transistor is housed in the TO-92 package, which is suitable for medium power applications. The BC639G is a Pb-Free device, aligning with modern environmental standards.

Key Specifications

Characteristic Symbol Value Unit
Collector - Emitter Voltage VCEO 80 Vdc
Collector - Base Voltage VCBO 80 Vdc
Emitter - Base Voltage VEBO 5.0 Vdc
Collector Current - Continuous IC 1.0 Adc
Total Device Dissipation @ TA = 25°C PD 625 mW
Total Device Dissipation @ TC = 25°C PD 800 mW
Operating and Storage Junction Temperature Range TJ, Tstg -55 to +150 °C
Thermal Resistance, Junction-to-Ambient RθJA 200 °C/W
Thermal Resistance, Junction-to-Case RθJC 83.3 °C/W
DC Current Gain (IC = 5.0 mA, VCE = 2.0 V) hFE 40 - 160
Collector - Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) VCE(sat) 0.5 Vdc
Base - Emitter On Voltage (IC = 500 mA, VCE = 2.0 V) VBE(on) 1.0 Vdc
Current Gain - Bandwidth Product (IC = 50 mA, VCE = 2.0 V, f = 100 MHz) fT 200 MHz

Key Features

  • Pb-Free Package: Compliant with environmental regulations, making it suitable for modern applications.
  • High Current Capability: Continuous collector current of up to 1.0 A, making it suitable for medium power applications.
  • Wide Operating Temperature Range: Operating and storage junction temperature range from -55°C to +150°C.
  • High DC Current Gain: hFE ranges from 40 to 160, ensuring reliable amplification.
  • Low Saturation Voltage: VCE(sat) of 0.5 V, reducing power losses in switching applications.
  • Compact TO-92 Package: Suitable for a variety of applications where space is limited.

Applications

  • Industrial Applications: Suitable for use in industrial control systems, power supplies, and other high-current applications.
  • Consumer Electronics: Used in various consumer electronic devices such as audio amplifiers, switching regulators, and motor control circuits.
  • Automotive Systems: Can be used in automotive systems for power management and control.
  • General Purpose Amplification: Ideal for general-purpose amplification and switching applications due to its high current and voltage ratings.

Q & A

  1. What is the maximum collector-emitter voltage of the BC639G transistor?

    The maximum collector-emitter voltage (VCEO) is 80 Vdc.

  2. What is the continuous collector current rating of the BC639G?

    The continuous collector current (IC) is rated at 1.0 Adc.

  3. What is the thermal resistance, junction-to-ambient of the BC639G?

    The thermal resistance, junction-to-ambient (RθJA) is 200 °C/W.

  4. What is the DC current gain range of the BC639G?

    The DC current gain (hFE) ranges from 40 to 160.

  5. What is the collector-emitter saturation voltage of the BC639G?

    The collector-emitter saturation voltage (VCE(sat)) is 0.5 Vdc.

  6. Is the BC639G Pb-Free?

    Yes, the BC639G is available in a Pb-Free package.

  7. What is the operating temperature range of the BC639G?

    The operating and storage junction temperature range is from -55°C to +150°C.

  8. What package type does the BC639G use?

    The BC639G is housed in the TO-92 package.

  9. Is the BC639G suitable for high-frequency applications?

    The current gain-bandwidth product (fT) is 200 MHz, making it suitable for high-frequency applications.

  10. Is the BC639G still in production?

    No, the BC639G is listed as obsolete by onsemi and other suppliers.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:625 mW
Frequency - Transition:200MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 Long Body
Supplier Device Package:TO-92 (TO-226)
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Similar Products

Part Number BC639G BC637G BC638G BC639
Manufacturer onsemi onsemi onsemi Fairchild Semiconductor
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN NPN PNP NPN
Current - Collector (Ic) (Max) 1 A 1 A 500 mA 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 60 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V
Power - Max 625 mW 625 mW 625 mW 625 mW
Frequency - Transition 200MHz 200MHz 150MHz 200MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92 (TO-226) TO-92 (TO-226) TO-92 (TO-226) TO-92 (TO-226)

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