BAT54LT1G
  • Share:

onsemi BAT54LT1G

Manufacturer No:
BAT54LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 200MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAT54LT1G Schottky barrier diode, produced by onsemi, is designed for high-speed switching applications, circuit protection, and voltage clamping. This diode features an extremely low forward voltage, which reduces conduction loss and makes it ideal for applications where efficiency is crucial. The miniature surface mount package (SOT-23) is well-suited for handheld and portable devices where space is limited. The BAT54LT1G is also AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage (IR = 10 μA) V(BR)R - - 30 Volts
Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT - 7.6 10 pF
Reverse Leakage (VR = 25 V) IR - 0.5 2.0 μA
Forward Voltage (IF = 0.1 mA) VF - 0.22 0.24 V
Forward Voltage (IF = 1.0 mA) VF - 0.29 0.32 V
Forward Voltage (IF = 10 mA) VF - 0.35 0.40 V
Forward Voltage (IF = 30 mA) VF - 0.41 0.50 V
Forward Voltage (IF = 100 mA) VF - 0.52 0.80 V
Reverse Recovery Time (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) trr - - 5.0 ns
Maximum Forward Current IF - - 200 mA
Maximum Reverse Voltage VR - - 30 V
Operating Temperature Range Top -55 - 125 °C
Storage Temperature Range Tstg -65 - 150 °C

Key Features

  • Extremely fast switching speed, making it suitable for high-speed applications.
  • Low forward voltage (typically 0.35 V at IF = 10 mA), reducing conduction loss.
  • Miniature surface mount package (SOT-23) ideal for handheld and portable applications where space is limited.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.

Applications

  • High-speed switching applications.
  • Circuit protection.
  • Voltage clamping.
  • Handheld and portable devices.
  • Automotive applications due to AEC-Q101 qualification.

Q & A

  1. What is the typical forward voltage of the BAT54LT1G at 10 mA?

    The typical forward voltage is 0.35 V at IF = 10 mA.

  2. What is the maximum reverse voltage rating of the BAT54LT1G?

    The maximum reverse voltage rating is 30 V.

  3. What is the operating temperature range of the BAT54LT1G?

    The operating temperature range is -55°C to 125°C.

  4. Is the BAT54LT1G AEC-Q101 qualified?
  5. What is the package type of the BAT54LT1G?

    The package type is SOT-23 (TO-236).

  6. What is the maximum forward current rating of the BAT54LT1G?

    The maximum forward current rating is 200 mA.

  7. Is the BAT54LT1G RoHS compliant?
  8. What is the reverse recovery time of the BAT54LT1G?

    The reverse recovery time is typically 5.0 ns.

  9. What are the typical applications of the BAT54LT1G?
  10. What is the storage temperature range of the BAT54LT1G?

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:800 mV @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:2 µA @ 25 V
Capacitance @ Vr, F:10pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.18
3,767

Please send RFQ , we will respond immediately.

Same Series
NSVBAT54LT1G
NSVBAT54LT1G
DIODE SCHOTTKY 30V 200MA SOT23-3

Similar Products

Part Number BAT54LT1G BAT54T1G BAT54WT1G BAT54LT3G BAT54HT1G BAT54LT1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete Active Obsolete
Diode Type Schottky Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V 30 V 30 V 30 V 30 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC) 200mA (DC) 200mA (DC) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 800 mV @ 100 mA 800 mV @ 100 mA 800 mV @ 100 mA 800 mV @ 100 mA 800 mV @ 100 mA 800 mV @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 5 ns 5 ns 5 ns 5 ns 5 ns 5 ns
Current - Reverse Leakage @ Vr 2 µA @ 25 V 2 µA @ 25 V 2 µA @ 25 V 2 µA @ 25 V 2 µA @ 25 V 2 µA @ 25 V
Capacitance @ Vr, F 10pF @ 1V, 1MHz 10pF @ 1V, 1MHz 10pF @ 1V, 1MHz 10pF @ 1V, 1MHz 10pF @ 1V, 1MHz 10pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SOD-123 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 SC-76, SOD-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOD-123 SC-70-3 (SOT323) SOT-23-3 (TO-236) SOD-323 SOT-23-3 (TO-236)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 150°C -

Related Product By Categories

1N4001G-T
1N4001G-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
STTH5L06RL
STTH5L06RL
STMicroelectronics
DIODE GEN PURP 600V 5A DO201AD
PMEG3020EP,115
PMEG3020EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 2A CFP5
RB751S40T1G
RB751S40T1G
onsemi
DIODE SCHOTTKY 30V 30MA SOD523
STTH2R02AFY
STTH2R02AFY
STMicroelectronics
DIODE GEN PURP 200V 2A SOD128
MUR160A
MUR160A
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAT720-F2-0000HF
BAT720-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 500MA SOT23
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
STPS8L30B
STPS8L30B
STMicroelectronics
DIODE SCHOTTKY 30V 8A DPAK
1N4002G R0G
1N4002G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
SZBZX84C12LT1G
SZBZX84C12LT1G
onsemi
DIODE ZENER 12V 250MW SOT23-3
MMSZ16T1G
MMSZ16T1G
onsemi
DIODE ZENER 16V 500MW SOD123
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
MC33364D1
MC33364D1
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
FAN3224TMX-F085
FAN3224TMX-F085
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
LB11861MC-AH
LB11861MC-AH
onsemi
IC MOTOR DRIVER 4.5V-16V 10MFPSK
MC78L18ABPG
MC78L18ABPG
onsemi
IC REG LINEAR 18V 100MA TO92-3
FOD817B3SD
FOD817B3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD