BAS70LT1
  • Share:

onsemi BAS70LT1

Manufacturer No:
BAS70LT1
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
DIODE SCHOTTKY 70V SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS70LT1 is a Schottky barrier diode produced by onsemi, designed for high-speed switching applications, circuit protection, and voltage clamping. This diode is characterized by its extremely low forward voltage drop and fast switching times, making it ideal for a variety of electronic circuits.

Key Specifications

ParameterValue
Voltage Rating (V_RRM)70 V
Forward Current (I_F)0.7 A
Forward Voltage Drop (V_F)0.55 V (typical at I_F = 0.1 A)
Reverse Current (I_R)10 μA (maximum at V_R = 70 V, T_J = 150°C)
Reverse Recovery Time (t_rr)5 ns (typical)
Operating Junction Temperature (T_J)-55°C to 150°C
Storage Temperature (T_stg)-55°C to 150°C

Key Features

  • Extremely low forward voltage drop
  • Fast switching times
  • High-speed switching capability
  • Circuit protection and voltage clamping
  • Low reverse current
  • Wide operating temperature range

Applications

  • High-speed switching circuits
  • Circuit protection
  • Voltage clamping
  • Power supplies and DC-DC converters
  • Audio and video equipment
  • Automotive and industrial electronics

Q & A

  1. What is the voltage rating of the BAS70LT1? The voltage rating of the BAS70LT1 is 70 V.
  2. What is the typical forward voltage drop of the BAS70LT1? The typical forward voltage drop is 0.55 V at I_F = 0.1 A.
  3. What are the typical applications of the BAS70LT1? The BAS70LT1 is typically used in high-speed switching circuits, circuit protection, and voltage clamping.
  4. What is the reverse recovery time of the BAS70LT1? The reverse recovery time is typically 5 ns.
  5. What is the operating junction temperature range of the BAS70LT1? The operating junction temperature range is -55°C to 150°C.
  6. Is the BAS70LT1 suitable for automotive applications? Yes, the BAS70LT1 is suitable for automotive and industrial electronics due to its robust specifications.
  7. What is the maximum forward current of the BAS70LT1? The maximum forward current is 0.7 A.
  8. How does the BAS70LT1 protect circuits? The BAS70LT1 protects circuits through its voltage clamping and low reverse current characteristics.
  9. Can the BAS70LT1 be used in audio equipment? Yes, the BAS70LT1 can be used in audio and video equipment due to its low forward voltage drop and fast switching times.
  10. Where can I find detailed specifications for the BAS70LT1? Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Digi-Key and Mouser Electronics.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):70 V
Current - Average Rectified (Io):70mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 15 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:10 µA @ 70 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
Operating Temperature - Junction:- 
0 Remaining View Similar

In Stock

$0.09
7,826

Please send RFQ , we will respond immediately.

Same Series
BAS70LT1G
BAS70LT1G
DIODE SCHOTTKY 70V 70MA SOT23-3
NSVBAS70LT1G
NSVBAS70LT1G
DIODE SCHOTTKY 70V 70MA SOT23-3

Similar Products

Part Number BAS70LT1 BAS70LT1G
Manufacturer onsemi onsemi
Product Status Obsolete Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 70 V 70 V
Current - Average Rectified (Io) 70mA (DC) 70mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 15 mA 1 V @ 15 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 10 µA @ 70 V 10 µA @ 70 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Operating Temperature - Junction - -55°C ~ 150°C

Related Product By Categories

BYV29-500,127
BYV29-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 9A TO220AC
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
MUR840G
MUR840G
onsemi
DIODE GEN PURP 400V 8A TO220AC
BAT54W-E3-18
BAT54W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
STPSC10H065D
STPSC10H065D
STMicroelectronics
DIODE SCHOTTKY 650V 10A TO220AC
1N4148WQ-13-F
1N4148WQ-13-F
Diodes Incorporated
SWITCHING DIODE SOD123 T&R 10K
1N4002GP
1N4002GP
Fairchild Semiconductor
RECTIFIER DIODE
MBRS130
MBRS130
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 1A, 30V
NRVBS3201T3G
NRVBS3201T3G
onsemi
DIODE SCHOTTKY 200V 3A SMC
PMEG3005AEA/ZLX
PMEG3005AEA/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 30V 500MA SC76
BAT54-7-F-31
BAT54-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

SZBZX84C12LT1G
SZBZX84C12LT1G
onsemi
DIODE ZENER 12V 250MW SOT23-3
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
NJVMJD31T4G
NJVMJD31T4G
onsemi
TRANS NPN 40V 3A DPAK
FDWS9508L_F085
FDWS9508L_F085
onsemi
MOSFET P-CH 40V 80A 8PQFN
FGHL75T65MQD
FGHL75T65MQD
onsemi
IGBT 650V 75A TO247
LM301ADR2G
LM301ADR2G
onsemi
IC OPAMP GP 1 CIRCUIT 8SOIC
MC33072DR2G
MC33072DR2G
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
MC14050BDTEL
MC14050BDTEL
onsemi
BUFFER, 6-FUNC
MC74HC245ADWR2
MC74HC245ADWR2
onsemi
IC BUS TRANSCVR 3-ST 8B 20SOIC
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
NCV4276CDS50R4G
NCV4276CDS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK-5
MC33269DTRK-3.3
MC33269DTRK-3.3
onsemi
IC REG LDO 0.8A 3.3V DPAK