BAS21M3T5G
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onsemi BAS21M3T5G

Manufacturer No:
BAS21M3T5G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 250V 200MA SOT723
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BAS21M3T5G is a high-voltage switching diode produced by onsemi, designed for low-power surface mount applications where board space is a critical factor. This device is housed in the compact SOT-723 surface mount package, making it ideal for applications requiring minimal board space. The BAS21M3T5G is AEC-Q101 qualified and PPAP capable, ensuring its suitability for automotive and other demanding applications.

Key Specifications

RatingSymbolValueUnit
Reverse VoltageVR250Vdc
Forward CurrentIF200mAdc
Peak Forward Surge CurrentIFM(surge)625mAdc
Total Device Dissipation (FR-5 Board, TA = 25°C)PD265mW
Thermal Resistance, Junction-to-Ambient (FR-5 Board)RθJA470°C/W
Junction and Storage TemperatureTJ, Tstg−55 to +150°C
Reverse Voltage Leakage Current (VR = 200 Vdc, TJ = 150°C)IR100μAdc
Forward Voltage (IF = 100 mAdc)VF1.0Vdc
Diode Capacitance (VR = 0, f = 1.0 MHz)CD5.0pF
Reverse Recovery Timetrr50ns

Key Features

  • Reduces board space due to its compact SOT-723 surface mount package.
  • Halide-free and Pb-free, making it environmentally friendly.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications.
  • High voltage switching capability with a reverse voltage rating of 250 Vdc.
  • Low forward voltage drop, typically 1.0 Vdc at 100 mAdc.

Applications

The BAS21M3T5G is suitable for a variety of applications, including:

  • Automotive systems due to its AEC-Q101 qualification and PPAP capability.
  • Low-power surface mount applications where board space is limited.
  • High voltage switching applications requiring reliable and efficient diode performance.
  • General-purpose rectification and switching in electronic circuits.

Q & A

  1. What is the reverse voltage rating of the BAS21M3T5G?
    The reverse voltage rating of the BAS21M3T5G is 250 Vdc.
  2. What is the maximum forward current for the BAS21M3T5G?
    The maximum forward current for the BAS21M3T5G is 200 mAdc.
  3. What is the package type of the BAS21M3T5G?
    The BAS21M3T5G is housed in the SOT-723 surface mount package.
  4. Is the BAS21M3T5G AEC-Q101 qualified?
    Yes, the BAS21M3T5G is AEC-Q101 qualified and PPAP capable.
  5. What is the typical forward voltage drop of the BAS21M3T5G?
    The typical forward voltage drop of the BAS21M3T5G is 1.0 Vdc at 100 mAdc.
  6. What is the reverse recovery time of the BAS21M3T5G?
    The reverse recovery time of the BAS21M3T5G is typically 50 ns.
  7. Is the BAS21M3T5G halide-free and Pb-free?
    Yes, the BAS21M3T5G is both halide-free and Pb-free.
  8. What is the junction and storage temperature range for the BAS21M3T5G?
    The junction and storage temperature range for the BAS21M3T5G is −55 to +150°C.
  9. What is the diode capacitance of the BAS21M3T5G at 1 MHz?
    The diode capacitance of the BAS21M3T5G at 1 MHz is typically 5.0 pF.
  10. What are some common applications for the BAS21M3T5G?
    The BAS21M3T5G is commonly used in automotive systems, low-power surface mount applications, high voltage switching applications, and general-purpose rectification and switching in electronic circuits.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):250 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOT-723
Supplier Device Package:SOT-723
Operating Temperature - Junction:-55°C ~ 150°C
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Same Series
NSVBAS21M3T5G
NSVBAS21M3T5G
DIODE GEN PURP 250V 200MA SOT723

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