Overview
The 2SA1774T1G is a PNP silicon general-purpose amplifier transistor produced by onsemi. This device is designed for low power surface mount applications where board space is limited. It is housed in the SC−75/SOT−416 package, making it ideal for compact designs. The transistor is AEC−Q101 qualified and PPAP capable, ensuring its suitability for automotive and other applications requiring stringent quality standards.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage | V(BR)CBO | - | - | -60 | Vdc |
| Collector-Base Voltage | V(BR)CEO | - | - | -50 | Vdc |
| Emitter-Base Voltage | V(BR)EBO | - | - | -6.0 | Vdc |
| Collector Current - Continuous | IC | - | - | -100 | mAdc |
| Power Dissipation | PD | - | - | 150 | mW |
| Junction Temperature | TJ | - | - | 150 | °C |
| Storage Temperature Range | Tstg | -55 | - | 150 | °C |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.5 | V |
| DC Current Gain | hFE | 120 | 210-460 | 560 | - |
| Transition Frequency | fT | - | 140 | - | MHz |
Key Features
- Reduces board space due to its compact SC−75/SOT−416 package.
- High DC current gain (hFE) of 210-460 (typical).
- Low collector-emitter saturation voltage (VCE(sat)) of less than 0.5 V.
- Available in 8 mm, 7-inch/3000 unit tape and reel packaging.
- S prefix for automotive and other applications requiring unique site and control change requirements; AEC−Q101 qualified and PPAP capable.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
Applications
The 2SA1774T1G is suitable for a variety of general-purpose amplifier applications, including:
- Automotive systems due to its AEC−Q101 qualification.
- Consumer electronics where compact design and low power consumption are essential.
- Industrial control systems requiring reliable and efficient amplification.
- Audio and signal processing circuits where high current gain and low saturation voltage are beneficial.
Q & A
- What is the maximum collector-emitter voltage for the 2SA1774T1G?
The maximum collector-emitter voltage (V(BR)CBO) is -60 Vdc.
- What is the typical DC current gain (hFE) of the 2SA1774T1G?
The typical DC current gain (hFE) is 210-460.
- What is the maximum junction temperature for the 2SA1774T1G?
The maximum junction temperature (TJ) is 150°C.
- Is the 2SA1774T1G RoHS compliant?
- What is the storage temperature range for the 2SA1774T1G?
The storage temperature range (Tstg) is -55°C to +150°C.
- What is the maximum collector current for the 2SA1774T1G?
The maximum collector current (IC) is -100 mA.
- What is the transition frequency (fT) of the 2SA1774T1G?
The transition frequency (fT) is typically 140 MHz.
- Is the 2SA1774T1G suitable for automotive applications?
- What is the collector-emitter saturation voltage (VCE(sat)) of the 2SA1774T1G?
The collector-emitter saturation voltage (VCE(sat)) is less than 0.5 V.
- What packaging options are available for the 2SA1774T1G?
