1N5908G
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onsemi 1N5908G

Manufacturer No:
1N5908G
Manufacturer:
onsemi
Package:
Bulk
Description:
TVS DIODE 5VWM 8.5VC AXIAL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N5908G is a unidirectional Transient Voltage Suppressor (TVS) diode produced by ON Semiconductor. This device is part of the Mosorb series, designed to protect voltage-sensitive components from high voltage and high-energy transients. It is known for its excellent clamping capability, high surge power handling, low zener impedance, and fast response time.

Key Specifications

Parameter Value Unit
Peak Power Dissipation (10/1000 μs) 1500 W
Working Peak Reverse Voltage (VRWM) 5.0 V
Breakdown Voltage (VBR) 6.0 V
Maximum Reverse Leakage Current (IR) @ VRWM 300 μA
Clamping Voltage @ Peak Pulse Current (VC) 7.6 - 8.5 V
Operating Junction Temperature Range -55 to +175 °C
Storage Temperature Range -65 to +175 °C
Maximum Lead Temperature for Soldering 260 °C
Package Type DO-201 (Axial Lead)

Key Features

  • High surge power capability: 1500 W @ 10/1000 μs
  • Low zener impedance and fast response time (typically < 1 ns)
  • Low leakage current: < 5 μA above 10 V
  • Pb-free and RoHS compliant
  • Compliance with IEC 61000-4-2, IEC 61000-4-5, and MIL STD 883G standards
  • High operating junction temperature: up to 175 °C
  • Corrosion-resistant finish and readily solderable leads

Applications

The 1N5908G is ideally suited for use in various applications, including:

  • Communication systems
  • Numerical controls
  • Process controls
  • Medical equipment
  • Business machines
  • Power supplies
  • Protection of CMOS, MOS, and Bipolar integrated circuits

Q & A

  1. What is the peak power dissipation of the 1N5908G?

    The peak power dissipation of the 1N5908G is 1500 W for a 10/1000 μs pulse duration.

  2. What is the working peak reverse voltage (VRWM) of the 1N5908G?

    The working peak reverse voltage (VRWM) of the 1N5908G is 5.0 V.

  3. What is the breakdown voltage (VBR) of the 1N5908G?

    The breakdown voltage (VBR) of the 1N5908G is 6.0 V.

  4. What is the maximum reverse leakage current (IR) at VRWM for the 1N5908G?

    The maximum reverse leakage current (IR) at VRWM for the 1N5908G is 300 μA.

  5. What is the clamping voltage at peak pulse current for the 1N5908G?

    The clamping voltage at peak pulse current for the 1N5908G ranges from 7.6 to 8.5 V.

  6. What are the operating and storage temperature ranges for the 1N5908G?

    The operating junction temperature range is -55 to +175 °C, and the storage temperature range is -65 to +175 °C.

  7. Is the 1N5908G Pb-free and RoHS compliant?

    Yes, the 1N5908G is Pb-free and RoHS compliant.

  8. What standards does the 1N5908G comply with?

    The 1N5908G complies with IEC 61000-4-2, IEC 61000-4-5, and MIL STD 883G standards.

  9. What is the maximum lead temperature for soldering the 1N5908G?

    The maximum lead temperature for soldering the 1N5908G is 260 °C.

  10. In what types of applications is the 1N5908G typically used?

    The 1N5908G is typically used in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies, and for protecting CMOS, MOS, and Bipolar integrated circuits.

Product Attributes

Type:Zener
Unidirectional Channels:1
Bidirectional Channels:- 
Voltage - Reverse Standoff (Typ):5V
Voltage - Breakdown (Min):6V
Voltage - Clamping (Max) @ Ipp:8.5V
Current - Peak Pulse (10/1000µs):- 
Power - Peak Pulse:1500W (1.5kW)
Power Line Protection:No
Applications:General Purpose
Capacitance @ Frequency:- 
Operating Temperature:-65°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:Axial
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