1N4148_S62Z
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onsemi 1N4148_S62Z

Manufacturer No:
1N4148_S62Z
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE GEN PURP 100V 200MA DO35
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iso14001
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iso9001
iso13485

Product Introduction

Overview

The 1N4148_S62Z, produced by onsemi, is a standard silicon switching signal diode. It is renowned for its dependable specifications, low cost, and widespread use in various electronic applications. This diode is a successor to the 1N914 and is often used interchangeably with it. The 1N4148_S62Z is particularly valued for its high-speed switching capabilities, making it suitable for applications up to about 100 MHz with a reverse-recovery time of no more than 4 ns.

Key Specifications

Parameter Symbol Units Value
Peak Repetitive Reverse Voltage VRRM V 100
Peak Working Reverse Voltage VRWM V 75
Average Forward Current IO mA 200
DC Forward Current IF mA 200
Peak Forward Surge Current (tp=1.0μs) IFSM A 2.0
Maximum Forward Voltage V_F V 1.0 at 10 mA
Reverse Recovery Time t_rr ns 4
Maximum Power Dissipation P_D mW 500
Operating and Storage Junction Temperature TJ, Tstg °C -65 to +200

Key Features

  • High-Speed Switching: The 1N4148_S62Z has a rapid reverse-recovery time of no more than 4 ns, making it ideal for high-frequency applications.
  • Low Forward Voltage Drop: It has a maximum forward voltage of 1 V at 10 mA, which is beneficial for minimizing power loss in switching applications.
  • High Peak Current Capability: The diode can handle peak forward surge currents of up to 2 A for a 1 μs pulse width, enhancing its robustness in various circuit designs.
  • Versatile Packaging: Available in DO-35 glass axial package and various surface-mount packages such as SOD-123, SOD-323, and SOD-523, offering flexibility in circuit design and layout.
  • Environmental Durability: The diode operates over a wide temperature range from -65°C to +200°C, ensuring reliability in diverse environmental conditions.

Applications

  • Signal Processing: The 1N4148_S62Z is widely used in signal processing applications where rapid and accurate switching is crucial, such as in analog and digital circuits.
  • High-Speed Electronics: Its high-speed switching capabilities make it suitable for high-speed electronics communication networks and other high-frequency applications.
  • Circuit Protection: The diode acts as a buffer against voltage spikes, protecting sensitive electronic components from damage caused by switching operations or natural events like lightning.
  • Digital Logic Circuits: It is well-suited for general switching and signal processing in digital logic circuits, enhancing computational efficacy and accuracy.

Q & A

  1. What is the maximum repetitive reverse voltage of the 1N4148_S62Z diode?

    The maximum repetitive reverse voltage (VRRM) is 100 V.

  2. What is the average forward current rating of the 1N4148_S62Z?

    The average forward current (IO) is 200 mA.

  3. What is the reverse recovery time of the 1N4148_S62Z diode?

    The reverse recovery time (t_rr) is no more than 4 ns.

  4. What are the common package types available for the 1N4148_S62Z diode?

    The diode is available in DO-35 glass axial package and various surface-mount packages such as SOD-123, SOD-323, and SOD-523.

  5. What is the maximum power dissipation of the 1N4148_S62Z diode?

    The maximum power dissipation (P_D) is 500 mW.

  6. What is the operating temperature range of the 1N4148_S62Z diode?

    The operating and storage junction temperature range is from -65°C to +200°C.

  7. Can the 1N4148_S62Z diode be used in high-frequency applications?

    Yes, the diode is suitable for high-frequency applications up to about 100 MHz due to its rapid reverse-recovery time.

  8. Is the 1N4148_S62Z diode RoHS compliant?

    Yes, the 1N4148_S62Z diode is RoHS compliant.

  9. What are some common applications of the 1N4148_S62Z diode?

    The diode is commonly used in signal processing, high-speed electronics communication networks, circuit protection, and digital logic circuits.

  10. Can the 1N4148_S62Z diode handle peak currents?

    Yes, the diode can handle peak forward surge currents of up to 2 A for a 1 μs pulse width.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 10 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:5 µA @ 75 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
Operating Temperature - Junction:-55°C ~ 175°C
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