1N4148_S62Z
  • Share:

onsemi 1N4148_S62Z

Manufacturer No:
1N4148_S62Z
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE GEN PURP 100V 200MA DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4148_S62Z, produced by onsemi, is a standard silicon switching signal diode. It is renowned for its dependable specifications, low cost, and widespread use in various electronic applications. This diode is a successor to the 1N914 and is often used interchangeably with it. The 1N4148_S62Z is particularly valued for its high-speed switching capabilities, making it suitable for applications up to about 100 MHz with a reverse-recovery time of no more than 4 ns.

Key Specifications

Parameter Symbol Units Value
Peak Repetitive Reverse Voltage VRRM V 100
Peak Working Reverse Voltage VRWM V 75
Average Forward Current IO mA 200
DC Forward Current IF mA 200
Peak Forward Surge Current (tp=1.0μs) IFSM A 2.0
Maximum Forward Voltage V_F V 1.0 at 10 mA
Reverse Recovery Time t_rr ns 4
Maximum Power Dissipation P_D mW 500
Operating and Storage Junction Temperature TJ, Tstg °C -65 to +200

Key Features

  • High-Speed Switching: The 1N4148_S62Z has a rapid reverse-recovery time of no more than 4 ns, making it ideal for high-frequency applications.
  • Low Forward Voltage Drop: It has a maximum forward voltage of 1 V at 10 mA, which is beneficial for minimizing power loss in switching applications.
  • High Peak Current Capability: The diode can handle peak forward surge currents of up to 2 A for a 1 μs pulse width, enhancing its robustness in various circuit designs.
  • Versatile Packaging: Available in DO-35 glass axial package and various surface-mount packages such as SOD-123, SOD-323, and SOD-523, offering flexibility in circuit design and layout.
  • Environmental Durability: The diode operates over a wide temperature range from -65°C to +200°C, ensuring reliability in diverse environmental conditions.

Applications

  • Signal Processing: The 1N4148_S62Z is widely used in signal processing applications where rapid and accurate switching is crucial, such as in analog and digital circuits.
  • High-Speed Electronics: Its high-speed switching capabilities make it suitable for high-speed electronics communication networks and other high-frequency applications.
  • Circuit Protection: The diode acts as a buffer against voltage spikes, protecting sensitive electronic components from damage caused by switching operations or natural events like lightning.
  • Digital Logic Circuits: It is well-suited for general switching and signal processing in digital logic circuits, enhancing computational efficacy and accuracy.

Q & A

  1. What is the maximum repetitive reverse voltage of the 1N4148_S62Z diode?

    The maximum repetitive reverse voltage (VRRM) is 100 V.

  2. What is the average forward current rating of the 1N4148_S62Z?

    The average forward current (IO) is 200 mA.

  3. What is the reverse recovery time of the 1N4148_S62Z diode?

    The reverse recovery time (t_rr) is no more than 4 ns.

  4. What are the common package types available for the 1N4148_S62Z diode?

    The diode is available in DO-35 glass axial package and various surface-mount packages such as SOD-123, SOD-323, and SOD-523.

  5. What is the maximum power dissipation of the 1N4148_S62Z diode?

    The maximum power dissipation (P_D) is 500 mW.

  6. What is the operating temperature range of the 1N4148_S62Z diode?

    The operating and storage junction temperature range is from -65°C to +200°C.

  7. Can the 1N4148_S62Z diode be used in high-frequency applications?

    Yes, the diode is suitable for high-frequency applications up to about 100 MHz due to its rapid reverse-recovery time.

  8. Is the 1N4148_S62Z diode RoHS compliant?

    Yes, the 1N4148_S62Z diode is RoHS compliant.

  9. What are some common applications of the 1N4148_S62Z diode?

    The diode is commonly used in signal processing, high-speed electronics communication networks, circuit protection, and digital logic circuits.

  10. Can the 1N4148_S62Z diode handle peak currents?

    Yes, the diode can handle peak forward surge currents of up to 2 A for a 1 μs pulse width.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 10 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:5 µA @ 75 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
371

Please send RFQ , we will respond immediately.

Same Series
1N4148-T26A
1N4148-T26A
DIODE GEN PURP 100V 200MA DO35
1N916
1N916
DIODE GEN PURP 100V 200MA DO35
1N916B
1N916B
DIODE GEN PURP 100V 200MA DO35
FDLL4148
FDLL4148
DIODE GEN PURP 100V 200MA SOD80
FDLL4448-D87Z
FDLL4448-D87Z
DIODE GEN PURP 100V 200MA LL34
1N4148_T26R
1N4148_T26R
DIODE GEN PURP 100V 200MA DO35
1N4448_T26A
1N4448_T26A
DIODE GEN PURP 100V 200MA DO35
1N4448_T50A
1N4448_T50A
DIODE GEN PURP 100V 200MA DO35
1N914B_S00Z
1N914B_S00Z
DIODE GEN PURP 100V 200MA DO35
1N914TR_S00Z
1N914TR_S00Z
DIODE GEN PURP 100V 200MA DO35
1N916A_T50R
1N916A_T50R
DIODE GEN PURP 100V 200MA DO35
1N916ATR
1N916ATR
DIODE GEN PURP 100V 200MA DO35

Related Product By Categories

STTH5L06RL
STTH5L06RL
STMicroelectronics
DIODE GEN PURP 600V 5A DO201AD
PMEG3020EP,115
PMEG3020EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 2A CFP5
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
PMEG6010ELRX
PMEG6010ELRX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A CFP3
MBR1100RLG
MBR1100RLG
onsemi
DIODE SCHOTTKY 100V 1A AXIAL
BAS16WS-HE3-18
BAS16WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
STPS8L30B
STPS8L30B
STMicroelectronics
DIODE SCHOTTKY 30V 8A DPAK
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
PMEG3005AEA/ZLX
PMEG3005AEA/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 30V 500MA SC76
BAS316/ZLF
BAS316/ZLF
NXP USA Inc.
DIODE GEN PURP 100V 215MA SOD323

Related Product By Brand

MURF860G
MURF860G
onsemi
DIODE GEN PURP 600V 8A TO220FP
SZMMBZ5226BLT1G
SZMMBZ5226BLT1G
onsemi
DIODE ZENER 3.3V 225MW SOT23-3
MMSZ5267BT1G
MMSZ5267BT1G
onsemi
DIODE ZENER 75V 500MW SOD123
BZX55C18_T50A
BZX55C18_T50A
onsemi
DIODE ZENER 18V 500MW DO35
2SA2222SG
2SA2222SG
onsemi
TRANS PNP 50V 10A TO220ML
BC81740MTF
BC81740MTF
onsemi
TRANS NPN 45V 0.8A SOT23-3
MC100EP195FAR2
MC100EP195FAR2
onsemi
IC DELAY LINE 1024TAP 32-LQFP
MC33072ADG
MC33072ADG
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
MC74AC273DTR2G
MC74AC273DTR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20TSSOP
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
LB11861MC-AH
LB11861MC-AH
onsemi
IC MOTOR DRIVER 4.5V-16V 10MFPSK
MC33275ST-5.0T3G
MC33275ST-5.0T3G
onsemi
IC REG LINEAR 5V 300MA SOT223