1N4148_S62Z
  • Share:

onsemi 1N4148_S62Z

Manufacturer No:
1N4148_S62Z
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE GEN PURP 100V 200MA DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4148_S62Z, produced by onsemi, is a standard silicon switching signal diode. It is renowned for its dependable specifications, low cost, and widespread use in various electronic applications. This diode is a successor to the 1N914 and is often used interchangeably with it. The 1N4148_S62Z is particularly valued for its high-speed switching capabilities, making it suitable for applications up to about 100 MHz with a reverse-recovery time of no more than 4 ns.

Key Specifications

Parameter Symbol Units Value
Peak Repetitive Reverse Voltage VRRM V 100
Peak Working Reverse Voltage VRWM V 75
Average Forward Current IO mA 200
DC Forward Current IF mA 200
Peak Forward Surge Current (tp=1.0μs) IFSM A 2.0
Maximum Forward Voltage V_F V 1.0 at 10 mA
Reverse Recovery Time t_rr ns 4
Maximum Power Dissipation P_D mW 500
Operating and Storage Junction Temperature TJ, Tstg °C -65 to +200

Key Features

  • High-Speed Switching: The 1N4148_S62Z has a rapid reverse-recovery time of no more than 4 ns, making it ideal for high-frequency applications.
  • Low Forward Voltage Drop: It has a maximum forward voltage of 1 V at 10 mA, which is beneficial for minimizing power loss in switching applications.
  • High Peak Current Capability: The diode can handle peak forward surge currents of up to 2 A for a 1 μs pulse width, enhancing its robustness in various circuit designs.
  • Versatile Packaging: Available in DO-35 glass axial package and various surface-mount packages such as SOD-123, SOD-323, and SOD-523, offering flexibility in circuit design and layout.
  • Environmental Durability: The diode operates over a wide temperature range from -65°C to +200°C, ensuring reliability in diverse environmental conditions.

Applications

  • Signal Processing: The 1N4148_S62Z is widely used in signal processing applications where rapid and accurate switching is crucial, such as in analog and digital circuits.
  • High-Speed Electronics: Its high-speed switching capabilities make it suitable for high-speed electronics communication networks and other high-frequency applications.
  • Circuit Protection: The diode acts as a buffer against voltage spikes, protecting sensitive electronic components from damage caused by switching operations or natural events like lightning.
  • Digital Logic Circuits: It is well-suited for general switching and signal processing in digital logic circuits, enhancing computational efficacy and accuracy.

Q & A

  1. What is the maximum repetitive reverse voltage of the 1N4148_S62Z diode?

    The maximum repetitive reverse voltage (VRRM) is 100 V.

  2. What is the average forward current rating of the 1N4148_S62Z?

    The average forward current (IO) is 200 mA.

  3. What is the reverse recovery time of the 1N4148_S62Z diode?

    The reverse recovery time (t_rr) is no more than 4 ns.

  4. What are the common package types available for the 1N4148_S62Z diode?

    The diode is available in DO-35 glass axial package and various surface-mount packages such as SOD-123, SOD-323, and SOD-523.

  5. What is the maximum power dissipation of the 1N4148_S62Z diode?

    The maximum power dissipation (P_D) is 500 mW.

  6. What is the operating temperature range of the 1N4148_S62Z diode?

    The operating and storage junction temperature range is from -65°C to +200°C.

  7. Can the 1N4148_S62Z diode be used in high-frequency applications?

    Yes, the diode is suitable for high-frequency applications up to about 100 MHz due to its rapid reverse-recovery time.

  8. Is the 1N4148_S62Z diode RoHS compliant?

    Yes, the 1N4148_S62Z diode is RoHS compliant.

  9. What are some common applications of the 1N4148_S62Z diode?

    The diode is commonly used in signal processing, high-speed electronics communication networks, circuit protection, and digital logic circuits.

  10. Can the 1N4148_S62Z diode handle peak currents?

    Yes, the diode can handle peak forward surge currents of up to 2 A for a 1 μs pulse width.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 10 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:5 µA @ 75 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
371

Please send RFQ , we will respond immediately.

Same Series
1N914TR
1N914TR
DIODE GEN PURP 100V 200MA DO35
1N914BTR
1N914BTR
DIODE GEN PURP 100V 200MA DO35
1N914ATR
1N914ATR
DIODE GEN PURP 100V 200MA DO35
1N916B
1N916B
DIODE GEN PURP 100V 200MA DO35
FDLL4148
FDLL4148
DIODE GEN PURP 100V 200MA SOD80
FDLL4148-D87Z
FDLL4148-D87Z
DIODE GEN PURP 100V 200MA SOD80
FDLL4448-D87Z
FDLL4448-D87Z
DIODE GEN PURP 100V 200MA LL34
FDLL914
FDLL914
DIODE GEN PURP 100V 200MA SOD80
1N4148_L99Z
1N4148_L99Z
DIODE GEN PURP 100V 200MA DO35
1N4148_T26R
1N4148_T26R
DIODE GEN PURP 100V 200MA DO35
1N914_T26A
1N914_T26A
DIODE GEN PURP 100V 200MA DO35
1N914B_T50A
1N914B_T50A
DIODE GEN PURP 100V 200MA DO35

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
PMEG2010AEBF
PMEG2010AEBF
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD523
1N4148WSF-7
1N4148WSF-7
Diodes Incorporated
DIODE GEN PURP 100V 250MA SOD323
BAS521-7
BAS521-7
Diodes Incorporated
DIODE GEN PURP 300V 250MA SOD523
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
MBR120LSFT3G
MBR120LSFT3G
onsemi
DIODE SCHOTTKY 20V 1A SOD123L
1N4148WQ-13-F
1N4148WQ-13-F
Diodes Incorporated
SWITCHING DIODE SOD123 T&R 10K
PMEG4010ER-QX
PMEG4010ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
SBRS8130LT3G-IR02
SBRS8130LT3G-IR02
onsemi
DIODE SCHOTTKY
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BAS316/ZLF
BAS316/ZLF
NXP USA Inc.
DIODE GEN PURP 100V 215MA SOD323

Related Product By Brand

MMSZ13T1G
MMSZ13T1G
onsemi
DIODE ZENER 13V 500MW SOD123
FDMT800100DC
FDMT800100DC
onsemi
MOSFET N-CH 100V 24A/162A 8DUAL
J113-D74Z
J113-D74Z
onsemi
JFET N-CH 35V 625MW TO92
NS5B1G385DTT1G
NS5B1G385DTT1G
onsemi
IC ANLG SWITCH SPST NO 5TSOP
CAT4008W-T2
CAT4008W-T2
onsemi
IC LED DRIVER LINEAR 80MA 16SOIC
AMIS30521C5212G
AMIS30521C5212G
onsemi
IC MTRDRV BIPLR 4.75-5.25V 32QFP
AMIS30622C6227G
AMIS30622C6227G
onsemi
IC MTR DRV BIPOLR 6.5-29V 20SOIC
NCP335FCT2G
NCP335FCT2G
onsemi
IC PWR SWITCH P-CHAN 1:1 4WLCSP
NCP302HSN27T1G
NCP302HSN27T1G
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
NCP3232NMNTXG
NCP3232NMNTXG
onsemi
IC REG BUCK ADJUSTABLE 15A 40QFN
MC33375D-3.0
MC33375D-3.0
onsemi
IC REG LINEAR 3V 300MA 8SOIC
FODM8801BR2
FODM8801BR2
onsemi
OPTOISO 3.75KV TRANS 4-MINI-FLAT