1N3070TR
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onsemi 1N3070TR

Manufacturer No:
1N3070TR
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 500MA DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N3070TR is a small signal rectifier diode produced by onsemi, formerly known as Fairchild Semiconductor. This diode is designed for general-purpose rectification and switching applications. It features a maximum continuous forward current of 500 mA and a peak reverse repetitive voltage of 200 V, making it suitable for a variety of electronic circuits. The diode is packaged in a DO-35 (axial) case, which is a common form factor for through-hole mounting.

Key Specifications

ParameterValueUnits
Maximum Continuous Forward Current (IF)500mA
Peak Reverse Repetitive Voltage (VRRM)200V
Maximum Forward Voltage Drop (VF)1V @ 100 mA
Reverse Leakage Current (IR)100nA @ 175 V
Peak Non-Repetitive Forward Surge Current (IFSM)4A
Reverse Recovery Time (trr)50ns
Operating Junction Temperature (TJ)175°C
Storage Temperature Range (TSTG)-65 to +200°C
Package TypeDO-35
Mounting TypeThrough Hole
Diameter1.91 mm

Key Features

  • High Peak Reverse Repetitive Voltage: Up to 200 V, ensuring robust performance in high-voltage applications.
  • Low Forward Voltage Drop: Maximum of 1 V at 100 mA, reducing power losses in the circuit.
  • Fast Reverse Recovery Time: 50 ns, making it suitable for high-frequency switching applications.
  • High Surge Current Capability: Peak non-repetitive forward surge current of 4 A, providing protection against transient overcurrent conditions.
  • Lead-Free and RoHS Compliant: Ensuring environmental compliance and safety.
  • Through-Hole Mounting: DO-35 package for easy integration into PCB designs.

Applications

The 1N3070TR diode is versatile and can be used in a variety of applications, including:

  • General-Purpose Rectification: Suitable for converting AC to DC in power supplies and other electronic circuits.
  • Switching Circuits: Ideal for high-frequency switching applications due to its fast reverse recovery time.
  • Protection Circuits: Can be used as a protective diode to prevent backflow of current in sensitive electronic components.
  • Automotive and Industrial Electronics: Robust enough to handle the demands of automotive and industrial environments.

Q & A

  1. What is the maximum continuous forward current of the 1N3070TR diode?
    The maximum continuous forward current is 500 mA.
  2. What is the peak reverse repetitive voltage of the 1N3070TR diode?
    The peak reverse repetitive voltage is 200 V.
  3. What is the maximum forward voltage drop of the 1N3070TR diode?
    The maximum forward voltage drop is 1 V at 100 mA.
  4. What is the reverse recovery time of the 1N3070TR diode?
    The reverse recovery time is 50 ns.
  5. Is the 1N3070TR diode lead-free and RoHS compliant?
    Yes, the 1N3070TR diode is lead-free and RoHS compliant.
  6. What is the operating junction temperature of the 1N3070TR diode?
    The operating junction temperature is up to 175°C.
  7. What is the storage temperature range for the 1N3070TR diode?
    The storage temperature range is -65 to +200°C.
  8. What is the package type of the 1N3070TR diode?
    The package type is DO-35 (axial).
  9. What is the mounting type of the 1N3070TR diode?
    The mounting type is through-hole.
  10. What are some common applications of the 1N3070TR diode?
    Common applications include general-purpose rectification, switching circuits, protection circuits, and use in automotive and industrial electronics.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):500mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 175 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
Operating Temperature - Junction:175°C (Max)
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Same Series
1N3070
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1N3070_T50R
DIODE GEN PURP 200V 500MA DO35

Similar Products

Part Number 1N3070TR 1N3070/TR
Manufacturer onsemi Microchip Technology
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 175 V
Current - Average Rectified (Io) 500mA 100mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 100 mA 1 V @ 100 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 175 V 100 nA @ 175 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz -
Mounting Type Through Hole Through Hole
Package / Case DO-204AH, DO-35, Axial DO-204AA, DO-7, Axial
Supplier Device Package DO-35 DO-7
Operating Temperature - Junction 175°C (Max) -65°C ~ 175°C

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