1N3070TR
  • Share:

onsemi 1N3070TR

Manufacturer No:
1N3070TR
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 500MA DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N3070TR is a small signal rectifier diode produced by onsemi, formerly known as Fairchild Semiconductor. This diode is designed for general-purpose rectification and switching applications. It features a maximum continuous forward current of 500 mA and a peak reverse repetitive voltage of 200 V, making it suitable for a variety of electronic circuits. The diode is packaged in a DO-35 (axial) case, which is a common form factor for through-hole mounting.

Key Specifications

ParameterValueUnits
Maximum Continuous Forward Current (IF)500mA
Peak Reverse Repetitive Voltage (VRRM)200V
Maximum Forward Voltage Drop (VF)1V @ 100 mA
Reverse Leakage Current (IR)100nA @ 175 V
Peak Non-Repetitive Forward Surge Current (IFSM)4A
Reverse Recovery Time (trr)50ns
Operating Junction Temperature (TJ)175°C
Storage Temperature Range (TSTG)-65 to +200°C
Package TypeDO-35
Mounting TypeThrough Hole
Diameter1.91 mm

Key Features

  • High Peak Reverse Repetitive Voltage: Up to 200 V, ensuring robust performance in high-voltage applications.
  • Low Forward Voltage Drop: Maximum of 1 V at 100 mA, reducing power losses in the circuit.
  • Fast Reverse Recovery Time: 50 ns, making it suitable for high-frequency switching applications.
  • High Surge Current Capability: Peak non-repetitive forward surge current of 4 A, providing protection against transient overcurrent conditions.
  • Lead-Free and RoHS Compliant: Ensuring environmental compliance and safety.
  • Through-Hole Mounting: DO-35 package for easy integration into PCB designs.

Applications

The 1N3070TR diode is versatile and can be used in a variety of applications, including:

  • General-Purpose Rectification: Suitable for converting AC to DC in power supplies and other electronic circuits.
  • Switching Circuits: Ideal for high-frequency switching applications due to its fast reverse recovery time.
  • Protection Circuits: Can be used as a protective diode to prevent backflow of current in sensitive electronic components.
  • Automotive and Industrial Electronics: Robust enough to handle the demands of automotive and industrial environments.

Q & A

  1. What is the maximum continuous forward current of the 1N3070TR diode?
    The maximum continuous forward current is 500 mA.
  2. What is the peak reverse repetitive voltage of the 1N3070TR diode?
    The peak reverse repetitive voltage is 200 V.
  3. What is the maximum forward voltage drop of the 1N3070TR diode?
    The maximum forward voltage drop is 1 V at 100 mA.
  4. What is the reverse recovery time of the 1N3070TR diode?
    The reverse recovery time is 50 ns.
  5. Is the 1N3070TR diode lead-free and RoHS compliant?
    Yes, the 1N3070TR diode is lead-free and RoHS compliant.
  6. What is the operating junction temperature of the 1N3070TR diode?
    The operating junction temperature is up to 175°C.
  7. What is the storage temperature range for the 1N3070TR diode?
    The storage temperature range is -65 to +200°C.
  8. What is the package type of the 1N3070TR diode?
    The package type is DO-35 (axial).
  9. What is the mounting type of the 1N3070TR diode?
    The mounting type is through-hole.
  10. What are some common applications of the 1N3070TR diode?
    Common applications include general-purpose rectification, switching circuits, protection circuits, and use in automotive and industrial electronics.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):500mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 175 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$0.33
2,743

Please send RFQ , we will respond immediately.

Same Series
1N3070
1N3070
RECTIFIER DIODE
1N3070_T50R
1N3070_T50R
DIODE GEN PURP 200V 500MA DO35

Similar Products

Part Number 1N3070TR 1N3070/TR
Manufacturer onsemi Microchip Technology
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 175 V
Current - Average Rectified (Io) 500mA 100mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 100 mA 1 V @ 100 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 175 V 100 nA @ 175 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz -
Mounting Type Through Hole Through Hole
Package / Case DO-204AH, DO-35, Axial DO-204AA, DO-7, Axial
Supplier Device Package DO-35 DO-7
Operating Temperature - Junction 175°C (Max) -65°C ~ 175°C

Related Product By Categories

1N4148WS_R1_00001
1N4148WS_R1_00001
Panjit International Inc.
SOD-323, SWITCHING
BAT46W-HE3-08
BAT46W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 150MA SOD123
BAS20-E3-18
BAS20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
STTH2R06S
STTH2R06S
STMicroelectronics
DIODE GEN PURP 600V 2A SMC
BAV21WS-AQ
BAV21WS-AQ
Diotec Semiconductor
DIODE SOD-323 250V 0.2A 50NS
MURA160T3G
MURA160T3G
onsemi
DIODE GEN PURP 600V 1A SMA
FSV10100V
FSV10100V
onsemi
DIODE SCHOTTKY 100V 10A TO277-3
BAS16-E3-08
BAS16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
1N4937GP-E3/54
1N4937GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
MURF860G
MURF860G
onsemi
DIODE GEN PURP 600V 8A TO220FP
SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
FDWS9508L_F085
FDWS9508L_F085
onsemi
MOSFET P-CH 40V 80A 8PQFN
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
NCP1593AMNTWG
NCP1593AMNTWG
onsemi
IC REG BUCK ADJUSTABLE 3A 10DFN
MC33269DTRK-3.3
MC33269DTRK-3.3
onsemi
IC REG LDO 0.8A 3.3V DPAK