Overview
The 1N3070/TR is a small signal diode produced by Microchip Technology, although it is noteworthy that this specific part is actually a legacy product that was originally manufactured by Fairchild Semiconductor before the company was acquired by ON Semiconductor and later integrated into the broader semiconductor industry landscape.
This diode is designed for general-purpose applications and is characterized by its robust electrical and thermal specifications, making it suitable for a variety of electronic circuits.
Key Specifications
| Parameter | Value | Units |
|---|---|---|
| VRRM (Maximum Repetitive Reverse Voltage) | 200 | V |
| IF(AV) (Average Rectified Forward Current) | 500 | mA |
| IFSM (Non-repetitive Peak Forward Surge Current) | 4.0 | A |
| TSTG (Storage Temperature Range) | -65 to +200 | °C |
| TJ (Operating Junction Temperature) | 175 | °C |
| PD (Power Dissipation) | 500 | mW |
| RθJA (Thermal Resistance, Junction to Ambient) | 300 | °C/W |
| VF (Forward Voltage) | 1.0 | V |
| IR (Reverse Leakage Current) | 100 nA (at VR = 175V, TA = 150°C) | nA |
| CT (Total Capacitance) | 5 pF (at VR = 0V, f = 1.0MHz) | pF |
| trr (Reverse Recovery Time) | 50 ns | ns |
Key Features
- High Reverse Voltage Rating: The 1N3070/TR has a maximum repetitive reverse voltage of 200V, making it suitable for applications requiring high voltage handling.
- Low Forward Voltage Drop: With a forward voltage drop of 1.0V at 100mA, this diode minimizes power losses in forward-biased conditions.
- High Surge Current Capability: The diode can handle non-repetitive peak forward surge currents up to 4.0A, providing robustness against transient conditions.
- Wide Operating Temperature Range: It operates within a junction temperature range of -65°C to 175°C, making it versatile for various environmental conditions.
- Low Reverse Leakage Current: The diode exhibits low reverse leakage current, which is beneficial for applications requiring minimal current leakage.
Applications
The 1N3070/TR small signal diode is suitable for a variety of general-purpose applications, including:
- Rectification and Voltage Regulation: Due to its high reverse voltage rating and low forward voltage drop, it is ideal for rectifier circuits and voltage regulation applications.
- Clamping and Protection Circuits: Its high surge current capability makes it useful in clamping and protection circuits to safeguard against voltage spikes and surges.
- Signal Processing and Amplification: The diode can be used in signal processing and amplification circuits where low forward voltage drop and high reverse voltage handling are required.
Q & A
- What is the maximum repetitive reverse voltage of the 1N3070/TR diode?
The maximum repetitive reverse voltage is 200V.
- What is the average rectified forward current rating of the 1N3070/TR?
The average rectified forward current is 500mA.
- What is the non-repetitive peak forward surge current of the 1N3070/TR?
The non-repetitive peak forward surge current is up to 4.0A.
- What is the operating junction temperature range of the 1N3070/TR?
The operating junction temperature range is -65°C to 175°C.
- What is the forward voltage drop of the 1N3070/TR at 100mA?
The forward voltage drop is 1.0V at 100mA.
- What is the reverse leakage current of the 1N3070/TR at VR = 175V and TA = 150°C?
The reverse leakage current is 100 nA.
- What is the total capacitance of the 1N3070/TR at VR = 0V and f = 1.0MHz?
The total capacitance is 5 pF.
- What is the reverse recovery time of the 1N3070/TR?
The reverse recovery time is 50 ns.
- Is the 1N3070/TR RoHS compliant?
Yes, the 1N3070/TR is RoHS3 compliant.
- What is the package type of the 1N3070/TR?
The package type is DO-7 (Through Hole).
