PUMH13/ZL115
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NXP USA Inc. PUMH13/ZL115

Manufacturer No:
PUMH13/ZL115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PUMH13/ZL115 is a small signal bipolar transistor array produced by NXP USA Inc. This component is designed as an NPN/NPN double Resistor-Equipped Transistor (RET) in a surface-mounted device (SMD) package. It is particularly useful for applications requiring pre-biased transistors, simplifying circuit design and reducing component count.

Key Specifications

ParameterValue
Transistor TypeNPN/NPN
Collector-Base Voltage (Vcbo)50 V
Collector-Emitter Voltage (Vceo)50 V
Emitter-Base Voltage (Vebo)5 V
Collector Current (Ic)100 mA
Power Dissipation (Ptot)200 mW
Operating Temperature Range-55°C to 150°C
Package TypeSOT363 (SC-70)

Key Features

  • Pre-biased NPN/NPN transistor array, reducing the need for external resistors.
  • Surface-mount device (SMD) in SOT363 (SC-70) package.
  • High collector-base and collector-emitter voltage ratings (50 V).
  • Low power dissipation (200 mW).
  • Broad operating temperature range (-55°C to 150°C).

Applications

The PUMH13/ZL115 is suitable for a variety of applications, including:

  • General-purpose switching and amplification.
  • Audio and video circuits.
  • Automotive and industrial control systems.
  • Consumer electronics and appliances.

Q & A

  1. What is the transistor type of the PUMH13/ZL115?
    The PUMH13/ZL115 is an NPN/NPN double Resistor-Equipped Transistor (RET).
  2. What is the maximum collector current of the PUMH13/ZL115?
    The maximum collector current is 100 mA.
  3. What is the operating temperature range of the PUMH13/ZL115?
    The operating temperature range is -55°C to 150°C.
  4. What package type does the PUMH13/ZL115 use?
    The PUMH13/ZL115 uses the SOT363 (SC-70) package.
  5. What are the typical applications of the PUMH13/ZL115?
    Typical applications include general-purpose switching and amplification, audio and video circuits, automotive and industrial control systems, and consumer electronics.
  6. What is the power dissipation of the PUMH13/ZL115?
    The power dissipation is 200 mW.
  7. What are the benefits of using a pre-biased transistor array like the PUMH13/ZL115?
    The benefits include simplified circuit design and reduced component count.
  8. What is the collector-base voltage rating of the PUMH13/ZL115?
    The collector-base voltage rating is 50 V.
  9. Is the PUMH13/ZL115 suitable for high-temperature environments?
    Yes, it is suitable for operating temperatures up to 150°C.
  10. Where can I find detailed specifications for the PUMH13/ZL115?
    Detailed specifications can be found in the datasheet available from NXP's official website or through distributors like Digi-Key and Mouser.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number PUMH13/ZL115 PUMH10/ZL115
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Transistor Type - -
Current - Collector (Ic) (Max) - -
Voltage - Collector Emitter Breakdown (Max) - -
Vce Saturation (Max) @ Ib, Ic - -
Current - Collector Cutoff (Max) - -
DC Current Gain (hFE) (Min) @ Ic, Vce - -
Power - Max - -
Frequency - Transition - -
Operating Temperature - -
Mounting Type - -
Package / Case - -
Supplier Device Package - -

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