PUMD12/L135
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NXP USA Inc. PUMD12/L135

Manufacturer No:
PUMD12/L135
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PUMD12/L135 is a resistor-equipped double transistor produced by NXP USA Inc., now part of Nexperia. This component is designed to simplify circuit design and reduce the overall component count in various electronic applications. It features a combination of one NPN and one PNP transistor, each with built-in bias resistors, making it an efficient choice for low to medium current applications.

Key Specifications

AttributeValue
CategoryTriode/MOS Tube/Transistor/Digital Transistors
PackageTSSOP-6 (SOT363)
DC Current Gain (hFE@Ic,Vce)80@5mA,5V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)150mV@500uA,10mA
Transistor Type1 NPN, 1 PNP – Pre-Biased
Transition Frequency (fT)230MHz; 180MHz
Power Dissipation (Pd)300mW
Collector Current (Ic)100mA
Collector-Emitter Breakdown Voltage (Vceo)50V
Collector Cut-Off Current (Icbo)1uA
Maximum Junction Temperature (Tj)150°C

Key Features

  • 100 mA output current capability
  • Built-in bias resistors
  • Simplified circuit design
  • Reduces component count
  • Reduces pick and place costs

Applications

  • Low current peripheral driver
  • Controlling IC inputs
  • Replacement of general purpose transistors in digital applications

Q & A

  1. What is the PUMD12/L135 transistor type?
    The PUMD12/L135 is a pre-biased bipolar transistor with one NPN and one PNP transistor.
  2. What is the package type of the PUMD12/L135?
    The package type is TSSOP-6 (SOT363).
  3. What is the maximum collector current of the PUMD12/L135?
    The maximum collector current is 100 mA.
  4. What is the collector-emitter breakdown voltage of the PUMD12/L135?
    The collector-emitter breakdown voltage is 50 V.
  5. What are the typical bias resistor values in the PUMD12/L135?
    The typical bias resistor values are 47 kΩ for both R1 and R2.
  6. What are the common applications of the PUMD12/L135?
    Common applications include low current peripheral drivers, controlling IC inputs, and replacing general purpose transistors in digital applications.
  7. What is the maximum power dissipation of the PUMD12/L135?
    The maximum power dissipation is 300 mW.
  8. What is the transition frequency of the PUMD12/L135?
    The transition frequency is 230 MHz for the NPN transistor and 180 MHz for the PNP transistor.
  9. Is the PUMD12/L135 automotive qualified?
    No, the PUMD12/L135 is not automotive qualified.
  10. What is the maximum junction temperature of the PUMD12/L135?
    The maximum junction temperature is 150°C.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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