PMV20EN215
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NXP Semiconductors PMV20EN215

Manufacturer No:
PMV20EN215
Manufacturer:
NXP Semiconductors
Package:
Bulk
Description:
NEXPERIA PMV20EN - SMALL SIGNAL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV20EN215 is a 30 V N-channel Trench MOSFET produced by Nexperia, a company that was spun off from NXP Semiconductors. This MOSFET is designed to offer high performance and efficiency in various electronic applications. It features advanced Trench MOSFET technology, which enhances its power dissipation capabilities and switching speeds.

Key Specifications

Parameter Value
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 7.6 A
Rds On - Drain-Source Resistance 21 mOhms
Vgs - Gate-Source Threshold Voltage Typically 1.5 V to 2.5 V
Power Dissipation 1200 mW

Key Features

  • Logic Level Compatibility: The PMV20EN215 is compatible with logic level gate drive, making it versatile for various applications.
  • Very Fast Switching: It offers fast switching times, which is crucial for high-frequency applications.
  • Trench MOSFET Technology: This technology enhances the power dissipation capability and reduces the on-resistance of the MOSFET.
  • Enhanced Power Dissipation: With a power dissipation capability of 1200 mW, it is suitable for applications requiring high power handling.

Applications

  • Power Management: Suitable for power management in various electronic devices due to its high efficiency and fast switching capabilities.
  • Motor Control: Used in motor control circuits where high current and low on-resistance are required.
  • Switch Mode Power Supplies: Ideal for switch mode power supplies due to its fast switching and low on-resistance characteristics.
  • General Purpose Switching: Can be used in general purpose switching applications where reliability and efficiency are key.

Q & A

  1. What is the drain-source breakdown voltage of the PMV20EN215?

    The drain-source breakdown voltage is 30 V.

  2. What is the continuous drain current of the PMV20EN215?

    The continuous drain current is 7.6 A.

  3. What is the typical gate-source threshold voltage of the PMV20EN215?

    The typical gate-source threshold voltage is between 1.5 V and 2.5 V.

  4. Is the PMV20EN215 logic level compatible?

    Yes, the PMV20EN215 is logic level compatible.

  5. What is the power dissipation capability of the PMV20EN215?

    The power dissipation capability is 1200 mW.

  6. What technology is used in the PMV20EN215?

    The PMV20EN215 uses Trench MOSFET technology.

  7. What are some common applications of the PMV20EN215?

    Common applications include power management, motor control, switch mode power supplies, and general purpose switching.

  8. Why is the PMV20EN215 suitable for high-frequency applications?

    It is suitable due to its very fast switching capabilities.

  9. What is the on-resistance of the PMV20EN215?

    The on-resistance (Rds On) is 21 mOhms.

  10. Is the PMV20EN215 RoHS compliant?

    Yes, the PMV20EN215 is RoHS compliant.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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