PMEG2005EGW,115
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NXP USA Inc. PMEG2005EGW,115

Manufacturer No:
PMEG2005EGW,115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
PMEG2005 - 20V, 0.5 A LOW VF MEG
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The PMEG2005EGW,115 is a low forward voltage drop (VF) Schottky barrier diode manufactured by NXP USA Inc., now known as Nexperia USA Inc. This diode is designed to offer high efficiency and reliability in various electronic applications. It features a maximum forward current of 0.5 A and a maximum reverse voltage of 20 V, making it suitable for a range of power management and signal processing tasks.

Key Specifications

Part Number PMEG2005EGW,115
Manufacturer Nexperia USA Inc.
Description 20 V, 0.5 A LOW VF MEG Schottky barrier diode
Current - Average Rectified (Io) 0.5 A
Voltage - Forward (Vf) (Max) @ If 390 mV @ 0.5 A
Current - Reverse Leakage @ Vr 200 µA @ 20 V
Capacitance @ Vr, F 66 pF @ 1 V, 1 MHz
Voltage - DC Reverse (Vr) (Max) 20 V
Operating Temperature - Junction 150°C (Max)
Package / Case SOD-123F
Mounting Type Surface Mount

Key Features

  • Low Forward Voltage Drop: The PMEG2005EGW,115 features a low forward voltage drop of 390 mV at 0.5 A, enhancing circuit efficiency.
  • High Current Capability: It can handle an average rectified current of 0.5 A, making it suitable for various power management applications.
  • Low Reverse Leakage: The diode has a low reverse leakage current of 200 µA at 20 V, reducing power loss in reverse bias conditions.
  • Compact Package: Available in the SOD-123F package, it is ideal for space-constrained designs.
  • High Operating Temperature: The diode can operate up to a junction temperature of 150°C, ensuring reliability in demanding environments.

Applications

The PMEG2005EGW,115 is versatile and can be used in a variety of applications, including:

  • Power Management: Suitable for power supply circuits, voltage regulators, and DC-DC converters due to its low forward voltage drop and high current handling capability.
  • Signal Processing: Used in signal rectification and filtering in audio and video circuits.
  • Automotive Systems: Applicable in automotive electronics where high reliability and efficiency are critical.
  • Consumer Electronics: Found in various consumer electronic devices such as smartphones, laptops, and other portable electronics.

Q & A

  1. What is the maximum forward current of the PMEG2005EGW,115?

    The maximum forward current is 0.5 A.

  2. What is the maximum reverse voltage of the PMEG2005EGW,115?

    The maximum reverse voltage is 20 V.

  3. What is the forward voltage drop of the PMEG2005EGW,115 at 0.5 A?

    The forward voltage drop is 390 mV at 0.5 A.

  4. What is the package type of the PMEG2005EGW,115?

    The diode is available in the SOD-123F package.

  5. What is the operating temperature range of the PMEG2005EGW,115?

    The diode can operate up to a junction temperature of 150°C.

  6. Is the PMEG2005EGW,115 RoHS compliant?
  7. What are the typical applications of the PMEG2005EGW,115?
  8. How does the PMEG2005EGW,115 reduce power loss in circuits?
  9. Can the PMEG2005EGW,115 be used in high-frequency applications?
  10. What is the reverse recovery time of the PMEG2005EGW,115?

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
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Similar Products

Part Number PMEG2005EGW,115 PMEG2005EGW,118 PMEG3005EGW,115
Manufacturer NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Diode Type - - -
Voltage - DC Reverse (Vr) (Max) - - -
Current - Average Rectified (Io) - - -
Voltage - Forward (Vf) (Max) @ If - - -
Speed - - -
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr - - -
Capacitance @ Vr, F - - -
Mounting Type - - -
Package / Case - - -
Supplier Device Package - - -
Operating Temperature - Junction - - -

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