PBHV9560Z115
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NXP USA Inc. PBHV9560Z115

Manufacturer No:
PBHV9560Z115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBHV9560Z115 is a high-voltage, low VCEsat PNP transistor manufactured by NXP USA Inc. This component is designed to offer high performance and reliability in various high-voltage applications. With its robust characteristics, it is particularly suited for use in automotive and industrial environments where high voltage and low saturation voltage are critical.

Key Specifications

ParameterValue
Collector-Base Voltage (Vcbo)600 V
Collector-Emitter Voltage (Vceo)600 V
Emitter-Base Voltage (Vebo)5 V
Continuous Collector Current (Ic)0.5 A
Saturation Voltage (Vce(sat))
Base-Emitter On Voltage (Vbe(on))
Transition Frequency (ft)
Storage Temperature Range
Operating Junction Temperature Range

Key Features

  • High Voltage Capability: The PBHV9560Z115 can handle collector-base and collector-emitter voltages up to 600 V, making it suitable for high-voltage applications.
  • Low VCEsat: This transistor features a low saturation voltage, typically 0.2 V, which reduces power losses and improves efficiency.
  • High Current Handling: It can handle a continuous collector current of 0.5 A, making it robust for various applications.
  • Automotive Qualified: Available in automotive qualified versions, ensuring reliability and compliance with automotive standards.

Applications

The PBHV9560Z115 is widely used in various high-voltage applications, including:

  • Automotive Systems: Suitable for use in automotive electronics such as power management, motor control, and other high-voltage circuits.
  • Industrial Control: Used in industrial control systems, power supplies, and other high-voltage industrial applications.
  • Power Management: Ideal for power management circuits where high voltage and low saturation voltage are essential.

Q & A

  1. What is the maximum collector-base voltage of the PBHV9560Z115?
    The maximum collector-base voltage is 600 V.
  2. What is the typical saturation voltage of the PBHV9560Z115?
    The typical saturation voltage is 0.2 V at Ic = 0.1 A, Ib = 10 mA.
  3. What is the continuous collector current rating of the PBHV9560Z115?
    The continuous collector current rating is 0.5 A.
  4. Is the PBHV9560Z115 automotive qualified?
    Yes, it is available in automotive qualified versions.
  5. What is the storage temperature range for the PBHV9560Z115?
    The storage temperature range is -55°C to 150°C.
  6. What are some common applications of the PBHV9560Z115?
    Common applications include automotive systems, industrial control, and power management circuits.
  7. What is the transition frequency of the PBHV9560Z115?
    The transition frequency is typically 100 MHz.
  8. What is the base-emitter on voltage of the PBHV9560Z115?
    The base-emitter on voltage is typically 0.7 V at Ic = 0.1 A, Ib = 10 mA.
  9. Can the PBHV9560Z115 be used in high-power applications?
    Yes, it is designed for high-power applications due to its high voltage and current handling capabilities.
  10. Where can I find detailed specifications and datasheets for the PBHV9560Z115?
    Detailed specifications and datasheets can be found on the NXP website or through authorized distributors like Digi-Key, Mouser, etc.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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