BUK762R6-40E/GFJ
  • Share:

NXP USA Inc. BUK762R6-40E/GFJ

Manufacturer No:
BUK762R6-40E/GFJ
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK762R6-40E/GFJ is an N-channel TrenchMOS standard level Field-Effect Transistor (FET) produced by Nexperia, a company that was previously part of NXP USA Inc. This MOSFET is packaged in a D2PAK (SOT404) package and is designed and qualified to the AEC-Q101 standard, making it suitable for high-performance automotive applications. The device utilizes TrenchMOS technology, which enhances its performance in thermally demanding environments.

Key Specifications

Parameter Value
Type number BUK762R6-40E
Package version SOT404 (D2PAK)
Product status End of life
Channel type N-channel
Number of transistors 1
VDS [max] (V) 40
RDSon [max] @ VGS = 10 V (mΩ) 2.6
Tj [max] (°C) 175
ID [max] (A) 100
QGD [typ] (nC) 35
QG(tot) [typ] @ VGS = 10 V (nC) 107
Ptot [max] (W) 263
Qr [typ] (nC) 45.9
VGSth [typ] (V) > 1 V at 175 °C
Automotive qualified Yes (AEC-Q101)
Ciss [typ] (pF) 5350
Coss [typ] (pF) 1032

Key Features

  • AEC-Q101 compliant, ensuring high reliability for automotive applications.
  • Repetitive avalanche rated, enhancing the device's ruggedness.
  • Suitable for thermally demanding environments with a maximum junction temperature of 175 °C.
  • True standard level gate with VGS(th) rating of greater than 1 V at 175 °C.

Applications

  • 12 V Automotive systems.
  • Motors, lamps, and solenoid control.
  • Start-Stop micro-hybrid applications.
  • Transmission control.
  • Ultra high performance power switching.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BUK762R6-40E?

    The maximum drain-source voltage (VDS) is 40 V.

  2. What is the maximum on-resistance (RDSon) at VGS = 10 V?

    The maximum on-resistance (RDSon) at VGS = 10 V is 2.6 mΩ.

  3. What is the maximum junction temperature (Tj) of the BUK762R6-40E?

    The maximum junction temperature (Tj) is 175 °C.

  4. What is the continuous drain current (ID) rating at 25 °C?

    The continuous drain current (ID) rating at 25 °C is 100 A.

  5. Is the BUK762R6-40E qualified for automotive use?

    Yes, it is AEC-Q101 compliant, making it suitable for high-performance automotive applications.

  6. What is the typical gate-source threshold voltage (VGS(th)) at 175 °C?

    The typical gate-source threshold voltage (VGS(th)) is greater than 1 V at 175 °C.

  7. What are the common applications of the BUK762R6-40E?

    Common applications include 12 V automotive systems, motor and lamp control, start-stop micro-hybrid systems, transmission control, and ultra high performance power switching.

  8. What is the package type of the BUK762R6-40E?

    The package type is D2PAK (SOT404).

  9. Is the BUK762R6-40E repetitive avalanche rated?

    Yes, it is repetitive avalanche rated, enhancing its ruggedness.

  10. What is the status of the BUK762R6-40E product?

    The product is currently end-of-life.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
54

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV5S/AA
DD15S20LV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV30/AA
CBC13W3S10HV30/AA
CONN D-SUB RCPT 13POS CRIMP
DD26M20HE20/AA
DD26M20HE20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2000X
DD26S2000X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S00X
DD26S2S00X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S1S500S
CBC46W4S1S500S
CONN D-SUB RCPT 46POS CRIMP
CBC9W4S10HE2S/AA
CBC9W4S10HE2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200T0
DD26S200T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HT0/AA
DD26S10HT0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S20WE3X
DD26S20WE3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE2X/AA
DD26S20WE2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5W0X/AA
DD26S2S5W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

BC856BW_R1_00001
BC856BW_R1_00001
Panjit International Inc.
TRANS PNP 65V 0.1A SOT323
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
MMBT5550LT1G
MMBT5550LT1G
onsemi
TRANS NPN 140V 0.6A SOT23-3
BFU910F115
BFU910F115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC857CW,135
BC857CW,135
Nexperia USA Inc.
TRANS PNP 45V 0.1A SOT323
BC846AQB-QZ
BC846AQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC857CE6433HTMA1
BC857CE6433HTMA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
STF826
STF826
STMicroelectronics
TRANS PNP 30V 3A SOT89-3
BCV47E6393HTSA1
BCV47E6393HTSA1
Infineon Technologies
TRANS NPN DARL 60V 0.5A SOT23
BC857BW/SNX
BC857BW/SNX
Nexperia USA Inc.
TRANS PNP 45V 0.1A SC70
BCP56-10-QX
BCP56-10-QX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BC807-25-QVL
BC807-25-QVL
Nexperia USA Inc.
TRANS PNP 45V 0.5A TO236AB

Related Product By Brand

BC807-40QA,147
BC807-40QA,147
NXP USA Inc.
NOW NEXPERIA BC807-40 - SMALL SI
ADC1003S030TS/C1'1
ADC1003S030TS/C1'1
NXP USA Inc.
IC ADC 10BIT 28SSOP
MC9S12XEQ512CAA
MC9S12XEQ512CAA
NXP USA Inc.
IC MCU 16BIT 512KB FLASH 80QFP
MC912DG128ACPVE
MC912DG128ACPVE
NXP USA Inc.
IC MCU 16BIT 128KB FLASH 112LQFP
MKE02Z64VLH4
MKE02Z64VLH4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 64LQFP
MKE16Z64VLF4
MKE16Z64VLF4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 48LQFP
MK10DX256VLK7R
MK10DX256VLK7R
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 80FQFP
MCIMX6U6AVM08ADR
MCIMX6U6AVM08ADR
NXP USA Inc.
I.MX6 ROM PERF ENHAN
74HC32PW/AUJ
74HC32PW/AUJ
NXP USA Inc.
IC GATE OR 4CH 2-INP 14TSSOP
BAS21SW115
BAS21SW115
NXP USA Inc.
NOW NEXPERIA BAS21SW - RECTIFIER
JN5169-001-M06-2Z
JN5169-001-M06-2Z
NXP USA Inc.
RX TXRX MODULE 802.15.4 U.FL SMD
MPX53DP
MPX53DP
NXP USA Inc.
SENSOR DIFF PRESS 7.25PSI MAX