BLF574XRS112
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NXP USA Inc. BLF574XRS112

Manufacturer No:
BLF574XRS112
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
POWER LDMOS TRANSISTOR, SOT1214
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF574XRS112 is a high-performance LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor manufactured by NXP USA Inc. This device is part of the BLF574 series, known for its exceptional RF power handling capabilities. The BLF574XRS112 is designed for high-frequency applications, particularly in the HF and VHF ranges, making it suitable for various radio frequency (RF) power amplification needs.

This transistor is housed in a SOT1214B package, which is a flanged balanced LDMOS ceramic package with two mounting holes and four leads. It is optimized for use in high-power RF amplifiers, offering robust performance and reliability.

Key Specifications

Parameter Value Unit
Technology LDMOS
Configuration Dual, Common Source
Frequency 225 MHz
Gain 23.5 dB
Voltage - Rated 110 V
Voltage - Test 50 V
Current - Test 100 mA
Power - Output 600 W
Mounting Type Surface Mount
Package/Case SOT1214B
Thermal Resistance (Rth(j-c)) 0.23 K/W
Junction Temperature (Tj) -225 °C
Storage Temperature (Tstg) -65 to +150 °C

Key Features

  • High Power Output: The BLF574XRS112 is capable of delivering an average output power of up to 600 W at a frequency of 225 MHz and a supply voltage of 50 V.
  • High Gain: It offers a gain of 23.5 dB, making it suitable for high-gain RF amplifiers.
  • Robust Construction: The device is packaged in a SOT1214B flanged balanced LDMOS ceramic package, ensuring good thermal management and mechanical stability.
  • Wide Operating Range: The transistor can operate over a wide range of temperatures and is designed to handle high drain-source voltages up to 110 V.
  • Low Thermal Resistance: With a thermal resistance from junction to case (Rth(j-c)) of 0.23 K/W, it helps in efficient heat dissipation.

Applications

The BLF574XRS112 is widely used in various RF power amplification applications, including:

  • Cellular Infrastructure: It is used in base stations and other cellular infrastructure equipment due to its high power handling and efficiency.
  • Industrial and Consumer Applications: Suitable for use in industrial and consumer RF devices that require high power output and reliability.
  • Aerospace and Defense: Its robust performance and reliability make it a candidate for use in aerospace and defense applications.
  • HF and VHF Amplifiers: Ideal for high-frequency and very high-frequency amplifiers due to its optimized performance in these frequency ranges.

Q & A

  1. Q: What is the typical output power of the BLF574XRS112?

    A: The BLF574XRS112 can deliver an average output power of up to 600 W at a frequency of 225 MHz and a supply voltage of 50 V.

  2. Q: What is the gain of the BLF574XRS112?

    A: The gain of the BLF574XRS112 is 23.5 dB.

  3. Q: What is the maximum drain-source voltage of the BLF574XRS112?

    A: The maximum drain-source voltage (VDS) is 110 V.

  4. Q: What is the thermal resistance from junction to case (Rth(j-c)) of the BLF574XRS112?

    A: The thermal resistance from junction to case (Rth(j-c)) is 0.23 K/W.

  5. Q: What is the package type of the BLF574XRS112?

    A: The BLF574XRS112 is packaged in a SOT1214B flanged balanced LDMOS ceramic package.

  6. Q: What are the typical applications of the BLF574XRS112?

    A: The BLF574XRS112 is used in cellular infrastructure, industrial and consumer RF devices, aerospace and defense applications, and HF and VHF amplifiers.

  7. Q: How do I ensure the authenticity of the BLF574XRS112?

    A: Ensure you purchase from authorized distributors or suppliers who rigorously test and verify the credentials of original manufacturers and authorized agents.

  8. Q: What is the warranty period for the BLF574XRS112?

    A: The warranty period typically offered by suppliers is 1 year, covering defects in materials and workmanship under normal use.

  9. Q: How can I find detailed information about the BLF574XRS112, such as application notes and factory information?

    A: You can find detailed information through the datasheet available on the manufacturer's website or through authorized distributors.

  10. Q: What is the return or replacement process for the BLF574XRS112 if it is defective?

    A: Suppliers typically conduct Pre-Shipment Inspections (PSI) and allow returns or replacements if the product is defective, provided it meets certain conditions such as being unused and in original packaging.

  11. Q: How can I order the BLF574XRS112?

    A: You can order the BLF574XRS112 by selecting the 'Add to Cart' button on the supplier's website and proceeding to the checkout page to enter your payment and shipping information.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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$175.64
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