BLF184XR112
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NXP USA Inc. BLF184XR112

Manufacturer No:
BLF184XR112
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
POWER LDMOS TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF184XR112 is a high-power LDMOS transistor designed and manufactured by NXP USA Inc. This component is part of NXP's extensive portfolio of RF power transistors, known for their high reliability and performance in various high-frequency applications. The BLF184XR112 is particularly suited for use in industrial, medical, and broadcast systems where high power and efficiency are critical.

Key Specifications

ParameterValue
Frequency RangeUp to 500 MHz
Power OutputUp to 180 W
Drain-Source Voltage (Vds)50 V
Gate-Source Voltage (Vgs)±10 V
Thermal Resistance (Rth)0.25 K/W (typical)
Package TypeAIR cavity package
Operating Temperature-40°C to +150°C

Key Features

  • High Power Handling: The BLF184XR112 can handle high power outputs, making it suitable for demanding applications.
  • High Efficiency: Optimized for high efficiency, reducing heat generation and improving overall system performance.
  • Robust Construction: The AIR cavity package provides excellent thermal and electrical performance.
  • Broad Frequency Range: Operates effectively across a wide frequency range, making it versatile for various applications.
  • Reliability: Designed with high reliability in mind, ensuring consistent performance in critical systems.

Applications

The BLF184XR112 is widely used in several high-power RF applications, including:

  • Industrial Systems: Such as plasma generators, MRI machines, and RF heating systems.
  • Medical Equipment: Including MRI machines and other medical devices requiring high-power RF signals.
  • Broadcast Systems: For high-power RF amplifiers in broadcast transmitters.
  • Aerospace and Defense: In various military and aerospace applications where high reliability and power are essential.

Q & A

  1. What is the maximum power output of the BLF184XR112?
    The BLF184XR112 can handle up to 180 W of power output.
  2. What is the typical operating frequency range of the BLF184XR112?
    The typical operating frequency range is up to 500 MHz.
  3. What is the drain-source voltage (Vds) rating of the BLF184XR112?
    The drain-source voltage (Vds) rating is 50 V.
  4. What type of package does the BLF184XR112 come in?
    The BLF184XR112 comes in an AIR cavity package.
  5. What are the typical applications of the BLF184XR112?
    The BLF184XR112 is used in industrial systems, medical equipment, broadcast systems, and aerospace and defense applications.
  6. What is the thermal resistance (Rth) of the BLF184XR112?
    The thermal resistance (Rth) is 0.25 K/W (typical).
  7. What is the operating temperature range of the BLF184XR112?
    The operating temperature range is -40°C to +150°C.
  8. Why is the BLF184XR112 preferred in high-power RF applications?
    The BLF184XR112 is preferred due to its high power handling, high efficiency, and robust construction.
  9. Is the BLF184XR112 suitable for use in medical devices?
    Yes, the BLF184XR112 is suitable for use in medical devices such as MRI machines.
  10. Can the BLF184XR112 be used in broadcast transmitters?
    Yes, the BLF184XR112 can be used in high-power RF amplifiers for broadcast transmitters.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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