BFR93AW135
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NXP USA Inc. BFR93AW135

Manufacturer No:
BFR93AW135
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFR93AW135 is a high-performance NPN bipolar transistor designed for RF and microwave applications, manufactured by NXP USA Inc. This transistor is part of NXP's wideband transistor family and is known for its high frequency capabilities and low noise characteristics. It is packaged in a SOT-323 surface mount format, making it suitable for a variety of modern electronic designs.

Key Specifications

ParameterValue
Transistor TypeNPN
Maximum Collector-Emitter Voltage (Vceo)12 V
Maximum Collector Current (Ic)35 mA
Maximum Power Dissipation (Pd)300 mW
Frequency RangeUp to 5 GHz
Package TypeSOT-323 (Surface Mount)

Key Features

  • High frequency operation up to 5 GHz, making it suitable for RF and microwave applications.
  • Low noise characteristics, which is crucial for high-sensitivity receivers and amplifiers.
  • Compact SOT-323 package, ideal for space-constrained designs.
  • High reliability and stability in various operating conditions.

Applications

  • RF amplifiers and receivers in wireless communication systems.
  • Microwave circuits, including those used in radar and satellite communications.
  • High-frequency measurement equipment and test instruments.
  • Automotive and industrial control systems requiring high-frequency signal processing.

Q & A

  1. What is the maximum collector-emitter voltage of the BFR93AW135? The maximum collector-emitter voltage (Vceo) is 12 V.
  2. What is the frequency range of the BFR93AW135? The BFR93AW135 operates up to 5 GHz.
  3. What is the package type of the BFR93AW135? The BFR93AW135 is packaged in a SOT-323 surface mount format.
  4. What are the typical applications of the BFR93AW135? Typical applications include RF amplifiers, microwave circuits, high-frequency measurement equipment, and automotive/industrial control systems.
  5. What is the maximum power dissipation of the BFR93AW135? The maximum power dissipation (Pd) is 300 mW.
  6. Is the BFR93AW135 suitable for high-sensitivity receivers? Yes, it is suitable due to its low noise characteristics.
  7. What is the maximum collector current of the BFR93AW135? The maximum collector current (Ic) is 35 mA.
  8. Where can I find detailed specifications for the BFR93AW135? Detailed specifications can be found in the datasheet available on NXP's official website or through distributors like Digi-Key and Mouser.
  9. Is the BFR93AW135 available in other package types? The BFR93AW135 is specifically available in the SOT-323 package.
  10. What are the key features of the BFR93AW135? Key features include high frequency operation, low noise, compact packaging, and high reliability.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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