BC51PASX
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NXP Semiconductors BC51PASX

Manufacturer No:
BC51PASX
Manufacturer:
NXP Semiconductors
Package:
Bulk
Description:
NOW NEXPERIA BC51PASX - SMALL SI
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iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC51PASX is a medium power PNP bipolar junction transistor (BJT) manufactured by NXP Semiconductors, now part of Nexperia. This transistor is designed for a variety of applications requiring high current and voltage handling capabilities. It features a compact surface mount DFN2020D-3 package, making it suitable for space-constrained designs. The BC51PASX is known for its reliability and performance in medium power applications.

Key Specifications

Parameter Value
Collector-Emitter Voltage (Vce) 45 V
Collector Current (Ic) 1 A
Collector-Emitter Saturation Voltage (Vce(sat)) 500 mV
Power Dissipation (Pd) 420 mW
Gain Bandwidth Product (fT) 145 MHz
Minimum Operating Temperature -55 °C
Maximum Operating Temperature 150 °C
Package Type DFN2020D-3 (Surface Mount)

Key Features

  • High collector current of 1 A and collector-emitter voltage of 45 V, making it suitable for medium power applications.
  • Low collector-emitter saturation voltage (Vce(sat)) of 500 mV, which reduces power losses.
  • High gain bandwidth product (fT) of 145 MHz, enabling high-frequency operation.
  • Compact DFN2020D-3 surface mount package for space-efficient designs.
  • Wide operating temperature range from -55 °C to 150 °C, ensuring reliability in various environments.

Applications

  • Power amplifiers and switches in audio and industrial control systems.
  • Automotive systems, including lighting and accessory control.
  • Consumer electronics such as home appliances and gaming consoles.
  • Industrial automation and control systems.
  • General-purpose amplification and switching in electronic circuits.

Q & A

  1. What is the collector-emitter voltage rating of the BC51PASX transistor?

    The collector-emitter voltage rating of the BC51PASX transistor is 45 V.

  2. What is the maximum collector current of the BC51PASX transistor?

    The maximum collector current of the BC51PASX transistor is 1 A.

  3. What is the power dissipation of the BC51PASX transistor?

    The power dissipation of the BC51PASX transistor is 420 mW.

  4. What is the gain bandwidth product (fT) of the BC51PASX transistor?

    The gain bandwidth product (fT) of the BC51PASX transistor is 145 MHz.

  5. What is the package type of the BC51PASX transistor?

    The BC51PASX transistor comes in a DFN2020D-3 surface mount package.

  6. What are the operating temperature ranges for the BC51PASX transistor?

    The operating temperature range for the BC51PASX transistor is from -55 °C to 150 °C.

  7. What are some common applications of the BC51PASX transistor?

    The BC51PASX transistor is commonly used in power amplifiers, automotive systems, consumer electronics, industrial automation, and general-purpose amplification and switching.

  8. Is the BC51PASX transistor suitable for high-frequency applications?

    Yes, the BC51PASX transistor is suitable for high-frequency applications due to its high gain bandwidth product (fT) of 145 MHz.

  9. What is the collector-emitter saturation voltage (Vce(sat)) of the BC51PASX transistor?

    The collector-emitter saturation voltage (Vce(sat)) of the BC51PASX transistor is 500 mV.

  10. Who is the manufacturer of the BC51PASX transistor?

    The BC51PASX transistor is manufactured by NXP Semiconductors, now part of Nexperia.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:420 mW
Frequency - Transition:145MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:3-UDFN Exposed Pad
Supplier Device Package:DFN2020D-3
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Similar Products

Part Number BC51PASX BC53PASX BC52PASX
Manufacturer NXP Semiconductors Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 45 V 80 V 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 420 mW 420 mW 420 mW
Frequency - Transition 145MHz 145MHz 145MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 3-UDFN Exposed Pad 3-UDFN Exposed Pad 3-UDFN Exposed Pad
Supplier Device Package DFN2020D-3 DFN2020D-3 DFN2020D-3

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