BAV170M315
  • Share:

NXP USA Inc. BAV170M315

Manufacturer No:
BAV170M315
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
NOW NEXPERIA BAV170M - RECTIFIER
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAV170M315 is a low-leakage double diode produced by NXP USA Inc. This component is designed for surface-mounted circuits and is particularly suited for applications requiring low leakage current. The diode is packaged in a small SOT23 plastic SMD package, making it ideal for space-constrained designs. Despite being marked as obsolete, it remains a viable option for many existing and legacy systems.

Key Specifications

Category Description
Manufacturer NXP USA Inc.
Package / Case TO-236-3, SC-59, SOT-23-3
Diode Configuration 1 Pair Common Cathode
Reverse Recovery Time (trr) 3 µs
Current - Reverse Leakage @ Vr 5 nA @ 75 V
Voltage - DC Reverse (Vr) (Max) 75 V
Operating Temperature - Junction 150°C (Max)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA
Current - Average Rectified (Io) (per Diode) 215 mA (DC)
Repetitive Peak Forward Current 500 mA
Non-Repetitive Peak Forward Current 4 A (tp = 1 µs), 1 A (tp = 1 ms)

Key Features

  • Low leakage current: typical 3 pA
  • Switching time: typical 0.8 µs
  • Continuous reverse voltage: max. 75 V
  • Repetitive peak reverse voltage: max. 85 V
  • Epitaxial, medium-speed switching diodes in a small SOT23 plastic SMD package
  • Common cathode configuration

Applications

The BAV170M315 is suitable for low-leakage current applications in surface-mounted circuits. It is commonly used in various electronic devices where low leakage and medium-speed switching are required.

Q & A

  1. What is the package type of the BAV170M315?

    The BAV170M315 is packaged in a TO-236-3, SC-59, or SOT-23-3 package.

  2. What is the diode configuration of the BAV170M315?

    The diodes are configured as 1 pair common cathode.

  3. What is the maximum continuous reverse voltage of the BAV170M315?

    The maximum continuous reverse voltage is 75 V.

  4. What is the typical switching time of the BAV170M315?

    The typical switching time is 0.8 µs.

  5. What is the maximum forward current per diode for the BAV170M315?

    The maximum forward current per diode is 215 mA (DC).

  6. What is the reverse recovery time of the BAV170M315?

    The reverse recovery time is 3 µs.

  7. What is the maximum junction temperature for the BAV170M315?

    The maximum junction temperature is 150°C.

  8. Is the BAV170M315 still in production?

    No, the BAV170M315 is marked as obsolete.

  9. What are the typical applications for the BAV170M315?

    It is used in low-leakage current applications in surface-mounted circuits.

  10. What is the forward voltage drop at 150 mA for the BAV170M315?

    The forward voltage drop at 150 mA is 1.25 V.

Product Attributes

Type:- 
Applications:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

$0.02
17,413

Please send RFQ , we will respond immediately.

Same Series
DD26S100E2X/AA
DD26S100E2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
PCD50M98S0T2X
PCD50M98S0T2X
DSUB 50M STR CONTACT J/S TIN
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
CBC46W4S10G00/AA
CBC46W4S10G00/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S2F00X
DD26S2F00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32000X/AA
DD44S32000X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S200V5X
DD26S200V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V50
DD26S2S0V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S00X/AA
DD44S32S00X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0V3X/AA
DD44S32S0V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WT0
DD26S20WT0
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

NBSG16MMNG
NBSG16MMNG
onsemi
IC TRANSCEIVER 16QFN
PDTA114YU
PDTA114YU
NXP USA Inc.
PDTA114Y SERIES - PNP RESISTOR-E
PDZ7.5BGW115
PDZ7.5BGW115
Nexperia USA Inc.
SINGLE ZENER DIODE
BCP56-10115
BCP56-10115
NXP USA Inc.
NOW NEXPERIA BCP56-10 - SMALL SI
BGU8009115
BGU8009115
NXP USA Inc.
IC AMP MMIC LNA 6XSON
HEF4541BT518
HEF4541BT518
Nexperia USA Inc.
NOW NEXPERIA HEF4541BT - PROGRAM
PTN5150AHX528
PTN5150AHX528
NXP USA Inc.
CC LOGIC FOR USB TYPE-C APPLICAT
PCF2123BS1512
PCF2123BS1512
NXP USA Inc.
REAL TIME CLOCK, VOLATILE, 1 TIM
CD4051BFXV
CD4051BFXV
Harris Corporation
CMOS ANALOG MULTIPLEXER/DEMULTIP
MC56F84442VLHR528
MC56F84442VLHR528
NXP USA Inc.
MICROCONTROLLER, 32-BIT, 56800E
MW7IC2020NT1528
MW7IC2020NT1528
NXP USA Inc.
SINGLE W-CDMA RF LDMOS WIDEBAND
PSD834F2-90J
PSD834F2-90J
STMicroelectronics
IC FLASH 2M PARALLEL 52PLCC

Related Product By Brand

PESD5V0S1BSF/S500315
PESD5V0S1BSF/S500315
NXP USA Inc.
TVS DIODE
BAP51-02,315
BAP51-02,315
NXP USA Inc.
RF DIODE PIN 60V 715MW SOD523
AFT09MS007NT1
AFT09MS007NT1
NXP USA Inc.
FET RF 30V 870MHZ PLD1.5W
MIMXRT1011CAE4A
MIMXRT1011CAE4A
NXP USA Inc.
IC MCU 32BIT EXT MEM 80FQFP
MC9S12XEQ512CAA
MC9S12XEQ512CAA
NXP USA Inc.
IC MCU 16BIT 512KB FLASH 80QFP
MIMX8QP5AVUFFAB
MIMX8QP5AVUFFAB
NXP USA Inc.
MPU I.MX8 QUAD PLUS
MCIMX6U6AVM08ADR
MCIMX6U6AVM08ADR
NXP USA Inc.
I.MX6 ROM PERF ENHAN
TJA1042TK/3/1,118
TJA1042TK/3/1,118
NXP USA Inc.
HIGH-SPEED CAN TRANSCEIVER WITH
IP4786CZ32518
IP4786CZ32518
NXP USA Inc.
IP4786CZ32S - CONSUMER CIRCUIT
HEF4093BT/C4118
HEF4093BT/C4118
NXP USA Inc.
NAND GATE
74AHC595PW/AUJ
74AHC595PW/AUJ
NXP USA Inc.
IC SHIFT REGISTER 8BIT 16-TSSOP
SA630D/01,118
SA630D/01,118
NXP USA Inc.
IC RF SWITCH SPDT 1GHZ 8SO