BAS321/ZLX
  • Share:

NXP USA Inc. BAS321/ZLX

Manufacturer No:
BAS321/ZLX
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 250MA SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS321/ZLX, produced by NXP USA Inc., is a general-purpose diode fabricated in planar technology and encapsulated in a small SOD323 (SC-76) plastic package. This diode is designed for unidirectional conductivity, making it suitable for various applications requiring the conversion of AC to DC and other rectification tasks. Although the BAS321/ZLX is currently listed as obsolete, it remains a significant component in many existing designs and legacy systems.

Key Specifications

ParameterValue
TypeStandard Diode
Maximum DC Reverse Voltage (Vr)200V
Average Rectified Current (Io)250mA
Forward Voltage (Vf) @ If1.25V @ 200mA
Reverse Recovery Time (trr)50ns
Current Reverse Leakage @ Vr100nA @ 200V
Capacitance @ Vr, F2pF @ 0V, 1MHz
Working Temperature Range-40°C to 150°C
PackageSOD323 (SC-76)
Mounting TypeSurface Mount
RoHS StatusLead Free / RoHS Compliant

Key Features

  • High Reverse Voltage Withstand Capacity: The diode can withstand a maximum DC reverse voltage of 200V, making it suitable for high-voltage applications.
  • Low Forward Voltage Drop: The forward voltage (Vf) is 1.25V @ 200mA, ensuring stable DC voltage output.
  • Low Reverse Leakage Current: The current reverse leakage is only 100nA @ 200V, reducing energy consumption and heat generation.
  • Fast Reverse Recovery Time: The diode has a fast reverse recovery time of 50ns, which helps in reducing energy loss and heat in the circuit.
  • Good High-Frequency Performance: The capacitance @ Vr, F is 2pF @ 0V, 1MHz, which helps in reducing noise and interference in the circuit.
  • Wide Working Temperature Range: The diode can operate in a wide temperature range from -40°C to 150°C, making it adaptable to various harsh working environments.

Applications

  • Signal Detector: Converts radio signals into DC electrical signals.
  • Automotive Electronics: Used in alternator circuits to convert AC generated by the alternator to DC for charging the vehicle's battery.
  • Battery Charger: Converts AC power from the power source into DC power to charge the battery.
  • HVDC Transmission: Used in high-voltage direct current transmission systems for efficient long-distance transmission.

Q & A

  1. What is the maximum DC reverse voltage of the BAS321/ZLX diode?
    The maximum DC reverse voltage (Vr) of the BAS321/ZLX diode is 200V.
  2. What is the average rectified current (Io) of the BAS321/ZLX diode?
    The average rectified current (Io) of the BAS321/ZLX diode is 250mA.
  3. What is the forward voltage (Vf) of the BAS321/ZLX diode at 200mA?
    The forward voltage (Vf) of the BAS321/ZLX diode at 200mA is 1.25V.
  4. What is the reverse recovery time (trr) of the BAS321/ZLX diode?
    The reverse recovery time (trr) of the BAS321/ZLX diode is 50ns.
  5. What is the current reverse leakage of the BAS321/ZLX diode at 200V?
    The current reverse leakage of the BAS321/ZLX diode at 200V is 100nA.
  6. What is the capacitance of the BAS321/ZLX diode at 0V, 1MHz?
    The capacitance of the BAS321/ZLX diode at 0V, 1MHz is 2pF.
  7. What is the working temperature range of the BAS321/ZLX diode?
    The working temperature range of the BAS321/ZLX diode is -40°C to 150°C.
  8. Is the BAS321/ZLX diode RoHS compliant?
    Yes, the BAS321/ZLX diode is Lead Free / RoHS Compliant.
  9. What package type does the BAS321/ZLX diode use?
    The BAS321/ZLX diode uses the SOD323 (SC-76) package.
  10. What are some common applications of the BAS321/ZLX diode?
    The BAS321/ZLX diode is commonly used in signal detection, automotive electronics, battery chargers, and HVDC transmission systems.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

-
128

Please send RFQ , we will respond immediately.

Same Series
DD26M20JV5Z
DD26M20JV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD44M32S0V3S/AA
DD44M32S0V3S/AA
CONN D-SUB HD PLUG 44P VERT SLDR
DD15S20JT2S/AA
DD15S20JT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JT2S
DD15S20JT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WV5S/AA
DD15S20WV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E20/AA
DD26S200E20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HE2S/AA
CBC13W3S10HE2S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26M20HE30/AA
DD26M20HE30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S5000/AA
DD26S2S5000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0TX/AA
DD26S2S0TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32000X
DD44S32000X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0T2X/AA
DD44S32S0T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BAS321/ZLX BAS321/ZLF
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V
Current - Average Rectified (Io) 250mA (DC) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 200 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SC-76, SOD-323 SC-76, SOD-323
Supplier Device Package SOD-323 SOD-323
Operating Temperature - Junction 150°C (Max) 150°C (Max)

Related Product By Categories

STPS2150A
STPS2150A
STMicroelectronics
DIODE SCHOTTKY 150V 2A SMA
PMEG100V080ELPDZ
PMEG100V080ELPDZ
Nexperia USA Inc.
DIODE SCHOTTKY 100V 8A CFP15
BAS16THVL
BAS16THVL
Nexperia USA Inc.
BAS16TH/SOT23/TO-236AB
PMEG1020EH,115
PMEG1020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 10V 2A SOD123F
BAV102
BAV102
onsemi
DIODE GEN PURP 150V 200MA LL34
BAV21WS-AQ
BAV21WS-AQ
Diotec Semiconductor
DIODE SOD-323 250V 0.2A 50NS
MBRA120ET3G
MBRA120ET3G
onsemi
DIODE SCHOTTKY 20V 1A SMA
MBR2H100SFT3G
MBR2H100SFT3G
onsemi
DIODE SCHOTTKY 100V 2A SOD123FL
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
1N4937GP-E3/54
1N4937GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
PMEG4002EL315
PMEG4002EL315
Nexperia USA Inc.
NOW NEXPERIA PMEG4002EL RECTIFIE
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD

Related Product By Brand

PESD5V0S1BSF/S500315
PESD5V0S1BSF/S500315
NXP USA Inc.
TVS DIODE
BAS56/DG/B2215
BAS56/DG/B2215
NXP USA Inc.
BAS56 - RECTIFIER DIODE
PMEG4030ER/DG/B2,1
PMEG4030ER/DG/B2,1
NXP USA Inc.
PMEG4030ER/DG/B2,1
PMV45EN,215
PMV45EN,215
NXP USA Inc.
MOSFET N-CH 30V 5.4A TO236AB
LPC2194HBD64/01,15
LPC2194HBD64/01,15
NXP USA Inc.
IC MCU 16/32B 256KB FLASH 64LQFP
LPC11U24FBD48/301,
LPC11U24FBD48/301,
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 48LQFP
MC912DG128ACPVE
MC912DG128ACPVE
NXP USA Inc.
IC MCU 16BIT 128KB FLASH 112LQFP
MC56F84550VLFR
MC56F84550VLFR
NXP USA Inc.
IC MCU 32BIT 96KB FLASH 48LQFP
LPC11E67JBD48E
LPC11E67JBD48E
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 48LQFP
UJA1169ATK/X/FZ
UJA1169ATK/X/FZ
NXP USA Inc.
IC MINI-CAN SYSTEM BASIS CHIP
MCZ33904C5EKR2
MCZ33904C5EKR2
NXP USA Inc.
IC INTERFACE SPECIALIZED 32SOIC
74HC139D-Q100118
74HC139D-Q100118
NXP USA Inc.
DECODER/DRIVER, HC/UH SERIES