BAS321/ZLX
  • Share:

NXP USA Inc. BAS321/ZLX

Manufacturer No:
BAS321/ZLX
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 250MA SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS321/ZLX, produced by NXP USA Inc., is a general-purpose diode fabricated in planar technology and encapsulated in a small SOD323 (SC-76) plastic package. This diode is designed for unidirectional conductivity, making it suitable for various applications requiring the conversion of AC to DC and other rectification tasks. Although the BAS321/ZLX is currently listed as obsolete, it remains a significant component in many existing designs and legacy systems.

Key Specifications

ParameterValue
TypeStandard Diode
Maximum DC Reverse Voltage (Vr)200V
Average Rectified Current (Io)250mA
Forward Voltage (Vf) @ If1.25V @ 200mA
Reverse Recovery Time (trr)50ns
Current Reverse Leakage @ Vr100nA @ 200V
Capacitance @ Vr, F2pF @ 0V, 1MHz
Working Temperature Range-40°C to 150°C
PackageSOD323 (SC-76)
Mounting TypeSurface Mount
RoHS StatusLead Free / RoHS Compliant

Key Features

  • High Reverse Voltage Withstand Capacity: The diode can withstand a maximum DC reverse voltage of 200V, making it suitable for high-voltage applications.
  • Low Forward Voltage Drop: The forward voltage (Vf) is 1.25V @ 200mA, ensuring stable DC voltage output.
  • Low Reverse Leakage Current: The current reverse leakage is only 100nA @ 200V, reducing energy consumption and heat generation.
  • Fast Reverse Recovery Time: The diode has a fast reverse recovery time of 50ns, which helps in reducing energy loss and heat in the circuit.
  • Good High-Frequency Performance: The capacitance @ Vr, F is 2pF @ 0V, 1MHz, which helps in reducing noise and interference in the circuit.
  • Wide Working Temperature Range: The diode can operate in a wide temperature range from -40°C to 150°C, making it adaptable to various harsh working environments.

Applications

  • Signal Detector: Converts radio signals into DC electrical signals.
  • Automotive Electronics: Used in alternator circuits to convert AC generated by the alternator to DC for charging the vehicle's battery.
  • Battery Charger: Converts AC power from the power source into DC power to charge the battery.
  • HVDC Transmission: Used in high-voltage direct current transmission systems for efficient long-distance transmission.

Q & A

  1. What is the maximum DC reverse voltage of the BAS321/ZLX diode?
    The maximum DC reverse voltage (Vr) of the BAS321/ZLX diode is 200V.
  2. What is the average rectified current (Io) of the BAS321/ZLX diode?
    The average rectified current (Io) of the BAS321/ZLX diode is 250mA.
  3. What is the forward voltage (Vf) of the BAS321/ZLX diode at 200mA?
    The forward voltage (Vf) of the BAS321/ZLX diode at 200mA is 1.25V.
  4. What is the reverse recovery time (trr) of the BAS321/ZLX diode?
    The reverse recovery time (trr) of the BAS321/ZLX diode is 50ns.
  5. What is the current reverse leakage of the BAS321/ZLX diode at 200V?
    The current reverse leakage of the BAS321/ZLX diode at 200V is 100nA.
  6. What is the capacitance of the BAS321/ZLX diode at 0V, 1MHz?
    The capacitance of the BAS321/ZLX diode at 0V, 1MHz is 2pF.
  7. What is the working temperature range of the BAS321/ZLX diode?
    The working temperature range of the BAS321/ZLX diode is -40°C to 150°C.
  8. Is the BAS321/ZLX diode RoHS compliant?
    Yes, the BAS321/ZLX diode is Lead Free / RoHS Compliant.
  9. What package type does the BAS321/ZLX diode use?
    The BAS321/ZLX diode uses the SOD323 (SC-76) package.
  10. What are some common applications of the BAS321/ZLX diode?
    The BAS321/ZLX diode is commonly used in signal detection, automotive electronics, battery chargers, and HVDC transmission systems.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

-
128

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE0/AA
RD15S10HE0/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V5S/AA
DD15S200V5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0TX
DD26S2S0TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE2X/AA
DD26S10HE2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
CBC9W4S10HV5S/AA
CBC9W4S10HV5S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S50T0/AA
DD26S2S50T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S600X
DD44S32S600X
CONN D-SUB HD RCPT 44P VERT SLDR
RD50S1S50V50
RD50S1S50V50
CONN D-SUB RCPT 50POS CRIMP
DD44S32S0V3X/AA
DD44S32S0V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20J0X
DD26S20J0X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BAS321/ZLX BAS321/ZLF
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V
Current - Average Rectified (Io) 250mA (DC) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 200 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SC-76, SOD-323 SC-76, SOD-323
Supplier Device Package SOD-323 SOD-323
Operating Temperature - Junction 150°C (Max) 150°C (Max)

Related Product By Categories

1N4148WS_R1_00001
1N4148WS_R1_00001
Panjit International Inc.
SOD-323, SWITCHING
BAT46W-HE3-08
BAT46W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 150MA SOD123
STTH5L06RL
STTH5L06RL
STMicroelectronics
DIODE GEN PURP 600V 5A DO201AD
BAS16L-G3-08
BAS16L-G3-08
Vishay General Semiconductor - Diodes Division
SWITCHING DIODE GENPURP DFN1006-
STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
STTH1R06A
STTH1R06A
STMicroelectronics
DIODE GEN PURP 600V 1A SMA
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
STPS2H100AFN
STPS2H100AFN
STMicroelectronics
100 V, 2 A POWER SCHOTTKY RECTIF
STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
FSV530AF
FSV530AF
onsemi
DIODE SCHOTTKY 30V 5A SMAF

Related Product By Brand

BZX84-C13/DG/B3215
BZX84-C13/DG/B3215
NXP USA Inc.
DIODE ZENER
PDTA144EU/ZL115
PDTA144EU/ZL115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
MKE04Z128VLH4
MKE04Z128VLH4
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
LPC1114FHN33/301:5
LPC1114FHN33/301:5
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 32HVQFN
S9S12G48AMLF
S9S12G48AMLF
NXP USA Inc.
IC MCU 16BIT 48KB FLASH 48LQFP
MIMX8MQ6DVAJZAA,557
MIMX8MQ6DVAJZAA,557
NXP USA Inc.
I.MX 8M: ARM CORTEX A53 QUAD COR
MIMX8ML4CVNKZAB
MIMX8ML4CVNKZAB
NXP USA Inc.
IC I.MX 8M PLUS QUADLITE BGA
74HCT4053PW-Q100118
74HCT4053PW-Q100118
NXP USA Inc.
SINGLE-ENDED MUX,TSSOP16
MC56F82723VLC557
MC56F82723VLC557
NXP USA Inc.
MICROCONTROLLER, 32-BIT, FLASH,
JN5169-001-M06-2Z
JN5169-001-M06-2Z
NXP USA Inc.
RX TXRX MODULE 802.15.4 U.FL SMD
NT3H2111W0FT1X
NT3H2111W0FT1X
NXP USA Inc.
IC RFID TRANSP 13.56MHZ 8SO
MPXHZ6115AC6T1
MPXHZ6115AC6T1
NXP USA Inc.
SENSOR ABS PRESS 16.7PSI MAX