BAS21/MI215
  • Share:

NXP USA Inc. BAS21/MI215

Manufacturer No:
BAS21/MI215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
BAS21 - HIGH-VOLTAGE SWITCHING D
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS21/MI215 is a high-voltage switching diode produced by NXP USA Inc. This component is designed for general-purpose switching applications and is known for its high switching speed and low leakage current. It is packaged in a small SOT23 plastic package, making it suitable for a variety of electronic circuits where space is a concern.

Key Specifications

ParameterValue
Maximum Continuous Forward Current (IF)0.2 A
Maximum Reverse Voltage (VR)250 V
Reverse Recovery Time (trr)≤ 50 ns
Leakage Current (IR)Low
Capacitance (Cd)≤ 5 pF
PackageSOT23

Key Features

  • High switching speed with a reverse recovery time (trr) of ≤ 50 ns.
  • Low leakage current, ensuring minimal current loss in reverse bias conditions.
  • High reverse voltage rating of up to 250 V, providing robust protection against voltage spikes.
  • Low capacitance of ≤ 5 pF, which is beneficial for high-frequency applications.
  • Compact SOT23 package, ideal for space-constrained designs.

Applications

The BAS21/MI215 is suitable for a wide range of applications, including:

  • General-purpose switching circuits.
  • High-frequency switching applications.
  • Power supply circuits requiring high voltage and low leakage current.
  • Automotive and industrial electronics where reliability and high performance are critical.

Q & A

  1. What is the maximum continuous forward current of the BAS21/MI215?
    The maximum continuous forward current is 0.2 A.
  2. What is the maximum reverse voltage rating of the BAS21/MI215?
    The maximum reverse voltage rating is 250 V.
  3. What is the typical reverse recovery time of the BAS21/MI215?
    The reverse recovery time (trr) is ≤ 50 ns.
  4. What is the package type of the BAS21/MI215?
    The component is packaged in a SOT23 plastic package.
  5. What are the key benefits of the BAS21/MI215 in high-frequency applications?
    The key benefits include high switching speed, low leakage current, and low capacitance.
  6. Is the BAS21/MI215 suitable for automotive applications?
    Yes, it is suitable for automotive and industrial electronics due to its reliability and high performance.
  7. Where can I find detailed specifications and datasheets for the BAS21/MI215?
    Detailed specifications and datasheets can be found on the NXP website and through distributors like Digi-Key.
  8. What is the typical capacitance of the BAS21/MI215?
    The typical capacitance is ≤ 5 pF.
  9. How does the BAS21/MI215 handle voltage spikes?
    It handles voltage spikes effectively due to its high reverse voltage rating of up to 250 V.
  10. Is the BAS21/MI215 available in different package types?
    No, the BAS21/MI215 is specifically available in the SOT23 package.

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
0 Remaining View Similar

In Stock

-
98

Please send RFQ , we will respond immediately.

Same Series
DD15S200V3S/AA
DD15S200V3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20W0S/AA
DD15S20W0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200E2S/AA
DD15S200E2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V5S
DD15S200V5S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HV3S/AA
CBC9W4S10HV3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S00X
DD26S2S00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26M20HE2Z/AA
DD26M20HE2Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S000
DD26S2S000
CONN D-SUB HD RCPT 26P SLDR CUP
M24308/24-67Z
M24308/24-67Z
CONN D-SUB HD PLUG 15POS SLDR
DD26S200EX
DD26S200EX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V3X/AA
DD44S32S0V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

1SS400T1G
1SS400T1G
onsemi
DIODE GEN PURP 100V 200MA SOD523
MUR840G
MUR840G
onsemi
DIODE GEN PURP 400V 8A TO220AC
RB751CS40,315
RB751CS40,315
Nexperia USA Inc.
DIODE SCHOTTKY 40V 120MA SOD882
1N4937GP-E3/54
1N4937GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
STTH512D
STTH512D
STMicroelectronics
DIODE GEN PURP 1.2KV 5A TO220AC
1N4148WQ-13-F
1N4148WQ-13-F
Diodes Incorporated
SWITCHING DIODE SOD123 T&R 10K
BAS516-TP
BAS516-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD523
BAS282-GS18
BAS282-GS18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 30MA SOD80
BAT42WS-7
BAT42WS-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD323
MURS140-13
MURS140-13
Diodes Incorporated
DIODE GEN PURP 400V 1A SMB
MUR4100E
MUR4100E
onsemi
DIODE GEN PURP 1KV 4A DO201AD
BAT54T
BAT54T
onsemi
DIODE SCHOTTKY 30V 200MA SOT523

Related Product By Brand

BC817-25/DG215
BC817-25/DG215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BUK7Y7R6-40E/GFX
BUK7Y7R6-40E/GFX
NXP USA Inc.
MOSFET N-CH LFPAK
PMV45EN,215
PMV45EN,215
NXP USA Inc.
MOSFET N-CH 30V 5.4A TO236AB
LPC1823JET100E
LPC1823JET100E
NXP USA Inc.
IC MCU 32BIT 512KB FLSH 100TFBGA
MIMX8ML6CVNKZAB
MIMX8ML6CVNKZAB
NXP USA Inc.
IC I.MX 8M PLUS QUAD BGA
74HC4852D,112
74HC4852D,112
NXP USA Inc.
74HC4852D - DIFFERENTIAL MULTIP
74HCT4851PW/S400118
74HCT4851PW/S400118
NXP USA Inc.
SINGLE-ENDED MUX, 8 CHANNEL
NX3L1G3157GM,115
NX3L1G3157GM,115
NXP USA Inc.
IC SWITCH SPDT 6XSON
TJA1048T,118
TJA1048T,118
NXP USA Inc.
IC TRANSCEIVER HALF 2/2 14SO
TJA1051T/3/1U
TJA1051T/3/1U
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8SO
74HCT4094D-Q100118
74HCT4094D-Q100118
NXP USA Inc.
SERIAL IN PARALLEL OUT
MMPF0100F9AZES
MMPF0100F9AZES
NXP USA Inc.
IC REG CONV I.MX6 12OUT 56QFN