BAS21/MI215
  • Share:

NXP USA Inc. BAS21/MI215

Manufacturer No:
BAS21/MI215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
BAS21 - HIGH-VOLTAGE SWITCHING D
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS21/MI215 is a high-voltage switching diode produced by NXP USA Inc. This component is designed for general-purpose switching applications and is known for its high switching speed and low leakage current. It is packaged in a small SOT23 plastic package, making it suitable for a variety of electronic circuits where space is a concern.

Key Specifications

ParameterValue
Maximum Continuous Forward Current (IF)0.2 A
Maximum Reverse Voltage (VR)250 V
Reverse Recovery Time (trr)≤ 50 ns
Leakage Current (IR)Low
Capacitance (Cd)≤ 5 pF
PackageSOT23

Key Features

  • High switching speed with a reverse recovery time (trr) of ≤ 50 ns.
  • Low leakage current, ensuring minimal current loss in reverse bias conditions.
  • High reverse voltage rating of up to 250 V, providing robust protection against voltage spikes.
  • Low capacitance of ≤ 5 pF, which is beneficial for high-frequency applications.
  • Compact SOT23 package, ideal for space-constrained designs.

Applications

The BAS21/MI215 is suitable for a wide range of applications, including:

  • General-purpose switching circuits.
  • High-frequency switching applications.
  • Power supply circuits requiring high voltage and low leakage current.
  • Automotive and industrial electronics where reliability and high performance are critical.

Q & A

  1. What is the maximum continuous forward current of the BAS21/MI215?
    The maximum continuous forward current is 0.2 A.
  2. What is the maximum reverse voltage rating of the BAS21/MI215?
    The maximum reverse voltage rating is 250 V.
  3. What is the typical reverse recovery time of the BAS21/MI215?
    The reverse recovery time (trr) is ≤ 50 ns.
  4. What is the package type of the BAS21/MI215?
    The component is packaged in a SOT23 plastic package.
  5. What are the key benefits of the BAS21/MI215 in high-frequency applications?
    The key benefits include high switching speed, low leakage current, and low capacitance.
  6. Is the BAS21/MI215 suitable for automotive applications?
    Yes, it is suitable for automotive and industrial electronics due to its reliability and high performance.
  7. Where can I find detailed specifications and datasheets for the BAS21/MI215?
    Detailed specifications and datasheets can be found on the NXP website and through distributors like Digi-Key.
  8. What is the typical capacitance of the BAS21/MI215?
    The typical capacitance is ≤ 5 pF.
  9. How does the BAS21/MI215 handle voltage spikes?
    It handles voltage spikes effectively due to its high reverse voltage rating of up to 250 V.
  10. Is the BAS21/MI215 available in different package types?
    No, the BAS21/MI215 is specifically available in the SOT23 package.

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
0 Remaining View Similar

In Stock

-
98

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV3S
DD15S20LV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200E2S/AA
DD15S200E2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V5S
DD15S200V5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JT2S/AA
DD15S20JT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2000X
DD26S2000X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2000X/AA
DD26S2000X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20WV5S
DD15S20WV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200T20/AA
DD26S200T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HE3S/AA
CBC13W3S10HE3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD44S32S500X
DD44S32S500X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0V3X/AA
DD44S32S0V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60TX/AA
DD44S32S60TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

MBRM120LT3G
MBRM120LT3G
onsemi
DIODE SCHOTTKY 20V 1A POWERMITE
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
STPSC4H065D
STPSC4H065D
STMicroelectronics
DIODE SCHOTTKY 650V 4A TO220AC
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
STTH1R06A
STTH1R06A
STMicroelectronics
DIODE GEN PURP 600V 1A SMA
SMMSD103T1G
SMMSD103T1G
onsemi
DIODE GEN PURP 250V 200MA SOD123
NRVBA210LNT3G
NRVBA210LNT3G
onsemi
DIODE SCHOTTKY 2A 10V SMA2
BAV21W-7
BAV21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
MUR240
MUR240
onsemi
DIODE GEN PURP 400V 2A AXIAL
SS16HE3/61T
SS16HE3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 1A DO214AC
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD

Related Product By Brand

BB178,335
BB178,335
NXP USA Inc.
DIODE VHF VAR CAP 32V SOD523
BFG520,235
BFG520,235
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
PMBT3906/TE1215
PMBT3906/TE1215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
SAF4000EL/101S500Y
SAF4000EL/101S500Y
NXP USA Inc.
SOFTWARE DEFINED RADIO
MK10DX128VLH7
MK10DX128VLH7
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
LPC1763FBD100,551
LPC1763FBD100,551
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 100LQFP
MIMX8MQ6DVAJZAA,557
MIMX8MQ6DVAJZAA,557
NXP USA Inc.
I.MX 8M: ARM CORTEX A53 QUAD COR
74LVC3G17DP-Q100125
74LVC3G17DP-Q100125
NXP USA Inc.
BUFFER, LVC/LCX/Z SERIES
74HC259PW112
74HC259PW112
NXP USA Inc.
NOW NEXPERIA 74HC259PW - D LATCH
HEF4528BP652
HEF4528BP652
NXP USA Inc.
IC MULTIVIBRATOR
PCF2111CT/1,112
PCF2111CT/1,112
NXP USA Inc.
IC DRVR 64 SEGMENT 40VSOP
74LV165DB118
74LV165DB118
NXP USA Inc.
NOW NEXPERIA 74LV165DB - PARALLE