BAS21/MI215
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NXP USA Inc. BAS21/MI215

Manufacturer No:
BAS21/MI215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
BAS21 - HIGH-VOLTAGE SWITCHING D
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BAS21/MI215 is a high-voltage switching diode produced by NXP USA Inc. This component is designed for general-purpose switching applications and is known for its high switching speed and low leakage current. It is packaged in a small SOT23 plastic package, making it suitable for a variety of electronic circuits where space is a concern.

Key Specifications

ParameterValue
Maximum Continuous Forward Current (IF)0.2 A
Maximum Reverse Voltage (VR)250 V
Reverse Recovery Time (trr)≤ 50 ns
Leakage Current (IR)Low
Capacitance (Cd)≤ 5 pF
PackageSOT23

Key Features

  • High switching speed with a reverse recovery time (trr) of ≤ 50 ns.
  • Low leakage current, ensuring minimal current loss in reverse bias conditions.
  • High reverse voltage rating of up to 250 V, providing robust protection against voltage spikes.
  • Low capacitance of ≤ 5 pF, which is beneficial for high-frequency applications.
  • Compact SOT23 package, ideal for space-constrained designs.

Applications

The BAS21/MI215 is suitable for a wide range of applications, including:

  • General-purpose switching circuits.
  • High-frequency switching applications.
  • Power supply circuits requiring high voltage and low leakage current.
  • Automotive and industrial electronics where reliability and high performance are critical.

Q & A

  1. What is the maximum continuous forward current of the BAS21/MI215?
    The maximum continuous forward current is 0.2 A.
  2. What is the maximum reverse voltage rating of the BAS21/MI215?
    The maximum reverse voltage rating is 250 V.
  3. What is the typical reverse recovery time of the BAS21/MI215?
    The reverse recovery time (trr) is ≤ 50 ns.
  4. What is the package type of the BAS21/MI215?
    The component is packaged in a SOT23 plastic package.
  5. What are the key benefits of the BAS21/MI215 in high-frequency applications?
    The key benefits include high switching speed, low leakage current, and low capacitance.
  6. Is the BAS21/MI215 suitable for automotive applications?
    Yes, it is suitable for automotive and industrial electronics due to its reliability and high performance.
  7. Where can I find detailed specifications and datasheets for the BAS21/MI215?
    Detailed specifications and datasheets can be found on the NXP website and through distributors like Digi-Key.
  8. What is the typical capacitance of the BAS21/MI215?
    The typical capacitance is ≤ 5 pF.
  9. How does the BAS21/MI215 handle voltage spikes?
    It handles voltage spikes effectively due to its high reverse voltage rating of up to 250 V.
  10. Is the BAS21/MI215 available in different package types?
    No, the BAS21/MI215 is specifically available in the SOT23 package.

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
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