Overview
The BAS16/LF1215 is a high-speed switching diode produced by NXP USA Inc. This component is part of the BAS16 series, known for its high switching speed and versatility in various electronic applications. The diode is encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package, making it suitable for space-constrained designs. It is lead-free and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Reverse Voltage (VR) | - | - | - | 100 | V |
| Forward Current (IF) | - | - | - | 215 | mA |
| Repetitive Peak Forward Current (IFRM) | tp ≤ 0.5 ms; δ ≤ 0.25 | - | - | 500 | mA |
| Non-Repetitive Peak Forward Current (IFSM) | tp = 1 μs; Tj(init) = 25 °C | - | - | 4 | A |
| Reverse Recovery Time (trr) | IF = 10 mA; IR = 10 mA; RL = 100 Ω; IR(meas) = 1 mA | - | - | 4 | ns |
| Forward Voltage (VF) | IF = 50 mA | - | - | 1000 | mV |
| Reverse Leakage Current (IR) | VR = 80 V | - | - | 0.5 | μA |
| Diode Capacitance (Cd) | f = 1 MHz; VR = 0 V | - | - | 1.5 | pF |
| Junction Temperature (Tj) | - | - | - | 150 | °C |
| Ambient Temperature (Tamb) | - | -65 | - | 150 | °C |
Key Features
- High-speed switching with reverse recovery time (trr) ≤ 4 ns
- Low capacitance, typically 1.5 pF
- Low leakage current, with IR ≤ 0.5 μA at VR = 80 V
- Reverse voltage capability up to 100 V
- Repetitive peak reverse voltage (VRRM) up to 100 V
- Lead-free and RoHS compliant, ensuring environmental sustainability
Applications
- High-speed switching applications
- General-purpose switching
- Automotive and industrial electronics
- Power, computing, consumer, mobile, and wearable devices
Q & A
- What is the maximum reverse voltage of the BAS16/LF1215 diode?
The maximum reverse voltage (VR) is 100 V.
- What is the typical forward current of the BAS16/LF1215 diode?
The typical forward current (IF) is 215 mA.
- What is the reverse recovery time of the BAS16/LF1215 diode?
The reverse recovery time (trr) is ≤ 4 ns.
- Is the BAS16/LF1215 diode RoHS compliant?
- What is the typical diode capacitance of the BAS16/LF1215?
The typical diode capacitance (Cd) is 1.5 pF at f = 1 MHz and VR = 0 V.
- What are the common applications of the BAS16/LF1215 diode?
- What is the maximum junction temperature for the BAS16/LF1215 diode?
- What is the package type of the BAS16/LF1215 diode?
- What is the repetitive peak forward current (IFRM) of the BAS16/LF1215 diode?
- How does the BAS16/LF1215 diode handle non-repetitive peak forward current (IFSM)?
