PMBTA06-QR
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Nexperia USA Inc. PMBTA06-QR

Manufacturer No:
PMBTA06-QR
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
TRANS NPN 80V 0.5A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMBTA06-QR is an NPN general-purpose transistor manufactured by Nexperia USA Inc. This transistor is encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package, making it suitable for a wide range of applications where space is limited. The PMBTA06-QR is designed to provide reliable performance in various electronic circuits, including those in the automotive, industrial, and consumer electronics sectors.

Key Specifications

ParameterValueUnit
Type of TransistorNPN-
PolarizationBipolar-
Collector-Emitter Voltage (VCEO)80V
Collector Current (IC)500mA
Peak Collector Current (ICM)1A
Power Dissipation (Ptot)250mW
Junction Temperature (Tj)150°C
Current Gain (hFE)100-
PackageSOT23-
MountingSMD-
Package Dimensions2.9 x 1.3 x 1 mm-

Key Features

  • Compact SOT23 package, ideal for space-constrained designs.
  • High collector-emitter voltage (VCEO) of 80 V, ensuring robust performance in various applications.
  • Maximum collector current of 500 mA and peak collector current of 1 A, suitable for a range of current requirements.
  • Low power dissipation of 250 mW, contributing to energy efficiency.
  • High current gain (hFE) of 100, providing reliable amplification.
  • Automotive qualified, making it suitable for use in automotive systems.

Applications

The PMBTA06-QR transistor is versatile and can be used in a variety of applications across different industries, including:

  • Automotive systems: Suitable for use in automotive electronics due to its automotive qualification.
  • Industrial electronics: Can be used in control circuits, switching applications, and amplifiers.
  • Consumer electronics: Applicable in audio amplifiers, power supplies, and other general-purpose electronic circuits.
  • General-purpose amplification and switching: Ideal for use in various electronic circuits requiring reliable bipolar transistor performance.

Q & A

  1. What is the package type of the PMBTA06-QR transistor?
    The PMBTA06-QR transistor is encapsulated in a SOT23 Surface-Mounted Device (SMD) plastic package.
  2. What is the maximum collector-emitter voltage (VCEO) of the PMBTA06-QR?
    The maximum collector-emitter voltage (VCEO) is 80 V.
  3. What is the maximum collector current (IC) of the PMBTA06-QR?
    The maximum collector current (IC) is 500 mA.
  4. What is the peak collector current (ICM) of the PMBTA06-QR?
    The peak collector current (ICM) is 1 A.
  5. What is the power dissipation (Ptot) of the PMBTA06-QR?
    The power dissipation (Ptot) is 250 mW.
  6. What is the junction temperature (Tj) of the PMBTA06-QR?
    The junction temperature (Tj) is 150 °C.
  7. What is the current gain (hFE) of the PMBTA06-QR?
    The current gain (hFE) is 100.
  8. Is the PMBTA06-QR transistor automotive qualified?
    Yes, the PMBTA06-QR transistor is automotive qualified.
  9. What are the dimensions of the SOT23 package?
    The dimensions of the SOT23 package are 2.9 x 1.3 x 1 mm.
  10. Where can I find more detailed specifications and datasheets for the PMBTA06-QR?
    You can find detailed specifications and datasheets on the official Nexperia website or through authorized distributors like Digi-Key, Mouser, and TME.eu.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
Power - Max:250 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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