Overview
The PMBTA06-QR is an NPN general-purpose transistor manufactured by Nexperia USA Inc. This transistor is encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package, making it suitable for a wide range of applications where space is limited. The PMBTA06-QR is designed to provide reliable performance in various electronic circuits, including those in the automotive, industrial, and consumer electronics sectors.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Type of Transistor | NPN | - |
Polarization | Bipolar | - |
Collector-Emitter Voltage (VCEO) | 80 | V |
Collector Current (IC) | 500 | mA |
Peak Collector Current (ICM) | 1 | A |
Power Dissipation (Ptot) | 250 | mW |
Junction Temperature (Tj) | 150 | °C |
Current Gain (hFE) | 100 | - |
Package | SOT23 | - |
Mounting | SMD | - |
Package Dimensions | 2.9 x 1.3 x 1 mm | - |
Key Features
- Compact SOT23 package, ideal for space-constrained designs.
- High collector-emitter voltage (VCEO) of 80 V, ensuring robust performance in various applications.
- Maximum collector current of 500 mA and peak collector current of 1 A, suitable for a range of current requirements.
- Low power dissipation of 250 mW, contributing to energy efficiency.
- High current gain (hFE) of 100, providing reliable amplification.
- Automotive qualified, making it suitable for use in automotive systems.
Applications
The PMBTA06-QR transistor is versatile and can be used in a variety of applications across different industries, including:
- Automotive systems: Suitable for use in automotive electronics due to its automotive qualification.
- Industrial electronics: Can be used in control circuits, switching applications, and amplifiers.
- Consumer electronics: Applicable in audio amplifiers, power supplies, and other general-purpose electronic circuits.
- General-purpose amplification and switching: Ideal for use in various electronic circuits requiring reliable bipolar transistor performance.
Q & A
- What is the package type of the PMBTA06-QR transistor?
The PMBTA06-QR transistor is encapsulated in a SOT23 Surface-Mounted Device (SMD) plastic package. - What is the maximum collector-emitter voltage (VCEO) of the PMBTA06-QR?
The maximum collector-emitter voltage (VCEO) is 80 V. - What is the maximum collector current (IC) of the PMBTA06-QR?
The maximum collector current (IC) is 500 mA. - What is the peak collector current (ICM) of the PMBTA06-QR?
The peak collector current (ICM) is 1 A. - What is the power dissipation (Ptot) of the PMBTA06-QR?
The power dissipation (Ptot) is 250 mW. - What is the junction temperature (Tj) of the PMBTA06-QR?
The junction temperature (Tj) is 150 °C. - What is the current gain (hFE) of the PMBTA06-QR?
The current gain (hFE) is 100. - Is the PMBTA06-QR transistor automotive qualified?
Yes, the PMBTA06-QR transistor is automotive qualified. - What are the dimensions of the SOT23 package?
The dimensions of the SOT23 package are 2.9 x 1.3 x 1 mm. - Where can I find more detailed specifications and datasheets for the PMBTA06-QR?
You can find detailed specifications and datasheets on the official Nexperia website or through authorized distributors like Digi-Key, Mouser, and TME.eu.