PBSS4350SSJ
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Nexperia USA Inc. PBSS4350SSJ

Manufacturer No:
PBSS4350SSJ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS 2NPN 50V 2.7A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBSS4350SSJ is a bipolar junction transistor (BJT) produced by Nexperia USA Inc. This component is part of the PBSS4350 series, known for its high performance and reliability in various electronic applications. The 'SSJ' suffix indicates specific packaging and configuration details. The transistor is designed to operate as a dual NPN transistor, making it suitable for a range of applications requiring high current switching and low collector-emitter saturation voltage.

Key Specifications

ParameterValue
Voltage (VCE)50 V
Continuous Collector Current (IC)2.7 A
Collector-Emitter Saturation Voltage (VCE(sat))Ultra low
Power Dissipation (PTOT)830 mW
Package Type8-SO (Small Outline)
Lead Free StatusLead-free

Key Features

  • High power dissipation of 830 mW, allowing for robust performance in high-power applications.
  • Ultra low collector-emitter saturation voltage, which enhances efficiency and reduces power losses.
  • Continuous collector current of 2.7 A, suitable for high current switching applications.
  • Dual NPN transistor configuration, providing flexibility in circuit design.
  • Lead-free packaging, compliant with environmental regulations.

Applications

The PBSS4350SSJ transistor is versatile and can be used in a variety of applications, including:

  • High current switching circuits.
  • Power amplifiers and drivers.
  • Automotive and industrial control systems.
  • Consumer electronics requiring high reliability and performance.

Q & A

  1. What is the maximum collector-emitter voltage of the PBSS4350SSJ transistor?
    The maximum collector-emitter voltage (VCE) is 50 V.
  2. What is the continuous collector current of the PBSS4350SSJ?
    The continuous collector current (IC) is 2.7 A.
  3. What is the power dissipation of the PBSS4350SSJ?
    The power dissipation (PTOT) is 830 mW.
  4. Is the PBSS4350SSJ lead-free?
    Yes, the PBSS4350SSJ is lead-free.
  5. What is the package type of the PBSS4350SSJ?
    The package type is 8-SO (Small Outline).
  6. What are some common applications of the PBSS4350SSJ?
    Common applications include high current switching circuits, power amplifiers, automotive and industrial control systems, and consumer electronics.
  7. Is the PBSS4350SSJ still in production?
    No, the PBSS4350SSJ is obsolete and no longer manufactured.
  8. What are some substitutes for the PBSS4350SSJ?
    Substitutes include similar transistors like the PHPT610030NKX from Nexperia USA Inc..
  9. Where can I find detailed specifications for the PBSS4350SSJ?
    Detailed specifications can be found in the datasheet available from Nexperia's sales office or through distributors like Mouser Electronics.

Product Attributes

Transistor Type:2 NPN (Dual)
Current - Collector (Ic) (Max):2.7A
Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:340mV @ 270mA, 2.7A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:300 @ 1A, 2V
Power - Max:750mW
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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PBSS4350SSJ
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