BSH205G2R
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Nexperia USA Inc. BSH205G2R

Manufacturer No:
BSH205G2R
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL FIELD-EFFECT TRANSI
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSH205G2R is a P-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia USA Inc. This transistor is part of Nexperia's extensive portfolio of MOSFETs, known for their high performance and reliability. The BSH205G2R is housed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, utilizing Trench MOSFET technology. This device is designed to offer low threshold voltage, fast switching, and high efficiency, making it suitable for a variety of applications across different industries.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (Vdss) 20 V
Continuous Drain Current (ID) @ 25°C 2 A
Gate to Source Voltage (Vgs) ±8 V
On-Resistance (Rds On) @ Vgs = 4.5V 170
Gate Charge (Qg) @ Vgs = 4.5V 6.5 nC
Input Capacitance (Ciss) @ Vds = 10V 418 pF
Power Dissipation (Ptot) @ Ta 480 mW
Operating Temperature Range -55°C to 150°C °C
Package TO-236-3, SC-59, SOT-23-3
RoHS Status ROHS3 Compliant

Key Features

  • Trench MOSFET Technology: Offers high efficiency and fast switching times.
  • Low Threshold Voltage: Ensures easy switching and low power consumption.
  • Extended Temperature Range: Operates from -55°C to 150°C, making it suitable for a wide range of applications.
  • AEC-Q101 Qualified: Meets automotive industry standards for reliability and performance.
  • Small SOT23 Package: Compact design for space-efficient applications.
  • High-Speed Switching: Ideal for high-speed line drivers, relay drivers, and high-side load switches.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
  • Industrial Control: Used in industrial control systems for high-speed switching and reliable operation.
  • Consumer Electronics: Found in consumer electronics for power management and switching circuits.
  • Power Management: Used in power management circuits for efficient power handling.
  • High-Speed Line Drivers and Relay Drivers: Ideal for applications requiring fast switching times.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the BSH205G2R?

    The maximum drain to source voltage (Vdss) is 20V.

  2. What is the continuous drain current (ID) of the BSH205G2R at 25°C?

    The continuous drain current (ID) at 25°C is 2A.

  3. What is the gate to source voltage (Vgs) range for the BSH205G2R?

    The gate to source voltage (Vgs) range is ±8V.

  4. What is the on-resistance (Rds On) of the BSH205G2R at Vgs = 4.5V?

    The on-resistance (Rds On) at Vgs = 4.5V is 170 mΩ.

  5. Is the BSH205G2R RoHS compliant?

    Yes, the BSH205G2R is ROHS3 compliant.

  6. What is the operating temperature range of the BSH205G2R?

    The operating temperature range is -55°C to 150°C.

  7. What package types are available for the BSH205G2R?

    The BSH205G2R is available in TO-236-3, SC-59, and SOT-23-3 packages.

  8. What are some typical applications of the BSH205G2R?

    Typical applications include automotive systems, industrial control, consumer electronics, power management, and high-speed line drivers and relay drivers.

  9. Is the BSH205G2R AEC-Q101 qualified?

    Yes, the BSH205G2R is AEC-Q101 qualified, making it suitable for automotive applications.

  10. What is the maximum power dissipation (Ptot) of the BSH205G2R?

    The maximum power dissipation (Ptot) is 480 mW.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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