BCP56-10H,115-NEX
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Nexperia USA Inc. BCP56-10H,115-NEX

Manufacturer No:
BCP56-10H,115-NEX
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
80 V, 1 A NPN MEDIUM POWER TRAN
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The BCP56-10H,115-NEX is an 80 V, 1 A NPN medium power transistor produced by Nexperia USA Inc. This transistor is designed for high-performance applications, particularly in automotive and industrial sectors. It is packaged in a SOT223 (SC-73) surface-mounted device (SMD) plastic package, which enhances its thermal dissipation capabilities. The BCP56-10H is AEC-Q101 qualified, ensuring its reliability and suitability for high-temperature applications up to 175 °C.

Key Specifications

ParameterValue
Type numberBCP56-10H
PackageSOT223 (SC-73)
Channel typeNPN
Maximum collector current (IC)1 A
Maximum collector-emitter voltage (VCEO)80 V
Minimum DC current gain (hFE)63
Maximum DC current gain (hFE)160
Maximum junction temperature (TJ)175 °C
Minimum transition frequency (fT)100 MHz
Power dissipation (Ptot)725 mW
Automotive qualifiedYes (AEC-Q101)

Key Features

  • High collector current capability and high power dissipation capability.
  • Three current gain selections to accommodate various application requirements.
  • High-temperature applications up to 175 °C, making it suitable for demanding environments.
  • AEC-Q101 qualified, ensuring reliability and performance in automotive applications.
  • Surface-mounted SOT223 (SC-73) package for enhanced thermal dissipation.

Applications

The BCP56-10H transistor is versatile and finds applications across various industries, including:

  • Automotive: For high-reliability and high-temperature applications such as in vehicle control systems and power management.
  • Industrial: In power supplies, motor control, and other high-power applications.
  • Consumer and Mobile: For devices requiring robust and efficient power management.
  • Power and Computing: In power amplifiers, switching circuits, and other high-performance electronic systems.

Q & A

  1. What is the maximum collector current of the BCP56-10H transistor?
    The maximum collector current is 1 A.
  2. What is the maximum collector-emitter voltage of the BCP56-10H transistor?
    The maximum collector-emitter voltage is 80 V.
  3. What is the package type of the BCP56-10H transistor?
    The package type is SOT223 (SC-73).
  4. Is the BCP56-10H transistor AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified.
  5. What is the maximum junction temperature of the BCP56-10H transistor?
    The maximum junction temperature is 175 °C.
  6. What are the typical applications of the BCP56-10H transistor?
    Typical applications include automotive, industrial, consumer, mobile, and power computing sectors.
  7. What is the minimum DC current gain (hFE) of the BCP56-10H transistor?
    The minimum DC current gain is 63.
  8. What is the maximum DC current gain (hFE) of the BCP56-10H transistor?
    The maximum DC current gain is 160.
  9. What is the transition frequency (fT) of the BCP56-10H transistor?
    The minimum transition frequency is 100 MHz.
  10. How much power can the BCP56-10H transistor dissipate?
    The transistor can dissipate up to 725 mW of power.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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