BC857BW/SNF
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Nexperia USA Inc. BC857BW/SNF

Manufacturer No:
BC857BW/SNF
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.1A SC70
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857BW,115 is a discrete semiconductor transistor manufactured by Nexperia, a leading company in the development of semiconductor components. This PNP bipolar junction transistor is designed to offer high-performance characteristics, making it suitable for a wide range of electronic circuits and applications.

Key Specifications

Parameter Value
Manufacturer Part Number BC857BW,115
Manufacturer Nexperia
Transistor Type PNP Bipolar Junction Transistor
Collector-Emitter Breakdown Voltage (max) 45 V
Collector Current (max) 100 mA
Power Dissipation (max) 200 mW
DC Current Gain (min) 220 @ 2 mA, 5 V
Transition Frequency 100 MHz
Operating Temperature Range Up to 150°C
Package / Case SOT323 (SC-70)

Key Features

  • High-performance PNP bipolar junction transistor
  • Low collector-emitter saturation voltage
  • High current gain
  • High transition frequency up to 100 MHz
  • Wide operating temperature range up to 150°C
  • Compact surface-mount package (SOT323 / SC-70)
  • RoHS3 compliant and AEC-Q101 qualified for automotive applications
  • Reliable and durable performance

Applications

The BC857BW,115 transistor is suitable for a wide range of electronic circuits and applications, including but not limited to:

  • General-purpose switching and amplification
  • Automotive electronics
  • Consumer electronics
  • Industrial control systems

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the BC857BW,115 transistor?

    The maximum collector-emitter breakdown voltage is 45 V.

  2. What is the maximum collector current of the BC857BW,115 transistor?

    The maximum collector current is 100 mA.

  3. What is the power dissipation of the BC857BW,115 transistor?

    The maximum power dissipation is 200 mW.

  4. What is the DC current gain of the BC857BW,115 transistor?

    The minimum DC current gain is 220 at 2 mA and 5 V.

  5. What is the transition frequency of the BC857BW,115 transistor?

    The transition frequency is up to 100 MHz.

  6. What is the operating temperature range of the BC857BW,115 transistor?

    The operating temperature range is up to 150°C.

  7. Is the BC857BW,115 transistor RoHS compliant?

    Yes, the BC857BW,115 transistor is RoHS3 compliant.

  8. Is the BC857BW,115 transistor suitable for automotive applications?

    Yes, it is AEC-Q101 qualified for automotive applications.

  9. What package type does the BC857BW,115 transistor use?

    The transistor uses the SOT323 (SC-70) surface-mount package.

  10. What are the key advantages of the BC857BW,115 transistor?

    The key advantages include excellent electrical characteristics, robust and reliable performance, and a compact surface-mount package.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:200 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70
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