Overview
The BC857BW-QX is a PNP general-purpose transistor manufactured by Nexperia USA Inc. This transistor is part of the BC857 series, known for its low current and low voltage capabilities, making it suitable for a wide range of applications. The BC857BW-QX is packaged in a small SOT323 (SC-70) surface-mount device (SMD) plastic package, which is ideal for space-constrained designs.
The transistor is qualified according to AEC-Q101, which ensures its reliability and performance in automotive and other demanding environments. It is designed for general-purpose switching and amplification, offering a balance of current and voltage handling with a maximum collector current of 100 mA and a maximum collector-emitter voltage of 65 V.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage (VCBO) | Open Emitter | - | - | 50 | V |
| Collector-Emitter Voltage (VCEO) | Open Base | - | - | 65 | V |
| Emitter-Base Voltage (VEBO) | Open Collector | - | - | 5 | V |
| Collector Current (IC) | - | - | - | 100 | mA |
| Peak Collector Current (ICM) | - | - | - | 200 | mA |
| DC Current Gain (hFE) | VCE = 5 V, IC = 2 mA | 220 | - | 475 | - |
| Collector-Emitter Saturation Voltage (VCEsat) | IC = 100 mA, IB = 5 mA | - | - | 250 | mV |
| Total Power Dissipation (Ptot) | Tamb ≤ 25 °C | - | - | 200 | mW |
| Junction Temperature (Tj) | - | - | - | 150 | °C |
| Ambient Temperature (Tamb) | - | -65 | - | 150 | °C |
| Storage Temperature (Tstg) | - | -65 | - | 150 | °C |
| Package | - | - | - | SOT323 (SC-70) | - |
Key Features
- Low Current and Voltage: Maximum collector current of 100 mA and maximum collector-emitter voltage of 65 V.
- AEC-Q101 Qualified: Suitable for use in automotive and other demanding applications.
- General-Purpose Switching and Amplification: Versatile for various switching and amplification tasks.
- Small Package Size: SOT323 (SC-70) surface-mount package, ideal for space-constrained designs.
- High DC Current Gain: hFE ranges from 220 to 475 at VCE = 5 V and IC = 2 mA.
- Low Collector-Emitter Saturation Voltage: VCEsat of up to 250 mV at IC = 100 mA and IB = 5 mA.
Applications
- Automotive Systems: Qualified according to AEC-Q101, making it suitable for automotive applications.
- Industrial Electronics: Used in various industrial control and automation systems.
- Consumer Electronics: Found in consumer devices requiring general-purpose switching and amplification.
- Power and Computing Systems: Used in power management and computing applications where low current and voltage handling are required.
- Mobile and Wearable Devices: Suitable for mobile and wearable devices due to its small package size and low power consumption.
Q & A
- What is the maximum collector current of the BC857BW-QX transistor?
The maximum collector current is 100 mA.
- What is the maximum collector-emitter voltage of the BC857BW-QX transistor?
The maximum collector-emitter voltage is 65 V.
- Is the BC857BW-QX transistor AEC-Q101 qualified?
Yes, it is qualified according to AEC-Q101, making it suitable for automotive applications.
- What is the package type of the BC857BW-QX transistor?
The transistor is packaged in a SOT323 (SC-70) surface-mount device (SMD) plastic package.
- What is the typical DC current gain (hFE) of the BC857BW-QX transistor?
The DC current gain (hFE) ranges from 220 to 475 at VCE = 5 V and IC = 2 mA.
- What is the maximum junction temperature of the BC857BW-QX transistor?
The maximum junction temperature is 150 °C.
- What are the typical applications of the BC857BW-QX transistor?
It is used in automotive, industrial, consumer electronics, power and computing systems, and mobile and wearable devices.
- How much power can the BC857BW-QX transistor dissipate?
The total power dissipation (Ptot) is up to 200 mW at Tamb ≤ 25 °C.
- What is the collector-emitter saturation voltage (VCEsat) of the BC857BW-QX transistor?
The VCEsat is up to 250 mV at IC = 100 mA and IB = 5 mA.
- Can the BC857BW-QX transistor be used for general-purpose switching and amplification?
Yes, it is designed for general-purpose switching and amplification tasks.
