BC856BQCZ
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Nexperia USA Inc. BC856BQCZ

Manufacturer No:
BC856BQCZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 65V 0.1A DFN1412D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856BQCZ is a 65 V, 100 mA PNP general-purpose transistor produced by Nexperia USA Inc. This transistor is designed for a wide range of applications, including automotive, industrial, and consumer electronics. It is packaged in an ultra-small DFN1412D-3 (SOT8009) leadless Surface-Mounted Device (SMD) plastic package, which offers high power dissipation capability and is suitable for Automatic Optical Inspection (AOI) of solder joints.

Key Specifications

Parameter Value Unit
Maximum Collector-Emitter Voltage (VCEO) 65 V
Maximum Collector Current (IC) 100 mA
Minimum Current Gain (hFE) 220
Maximum Current Gain (hFE) 475
Maximum Junction Temperature (TJ) 150 °C
Transition Frequency (fT) 100 MHz
Package Type DFN1412D-3 (SOT8009)
Package Size 1.4 x 1.2 x 0.48 mm
Automotive Qualified Yes (AEC-Q101)

Key Features

  • Low current (max. 100 mA) and low voltage (max. 65 V) capabilities.
  • High power dissipation capability.
  • Suitable for Automatic Optical Inspection (AOI) of solder joints.
  • Ultra-small DFN1412D-3 (SOT8009) leadless SMD package.
  • Qualified according to AEC-Q101, making it suitable for automotive applications.
  • General-purpose switching and amplification.

Applications

The BC856BQCZ transistor is versatile and can be used in a variety of applications across different industries, including:

  • Automotive: Suitable for use in automotive systems due to its AEC-Q101 qualification.
  • Industrial: Used in industrial control systems, automation, and other industrial electronics.
  • Consumer Electronics: Found in various consumer devices such as audio equipment, home appliances, and mobile devices.
  • Power and Computing: Used in power management and computing systems where low current and high reliability are required.

Q & A

  1. What is the maximum collector-emitter voltage of the BC856BQCZ transistor?

    The maximum collector-emitter voltage (VCEO) is 65 V.

  2. What is the maximum collector current of the BC856BQCZ transistor?

    The maximum collector current (IC) is 100 mA.

  3. What is the package type of the BC856BQCZ transistor?

    The package type is DFN1412D-3 (SOT8009), which is an ultra-small leadless SMD package.

  4. Is the BC856BQCZ transistor qualified for automotive applications?

    Yes, it is qualified according to AEC-Q101, making it suitable for automotive applications.

  5. What are the dimensions of the BC856BQCZ package?

    The package dimensions are 1.4 x 1.2 x 0.48 mm.

  6. What is the transition frequency (fT) of the BC856BQCZ transistor?

    The transition frequency (fT) is 100 MHz.

  7. What are the typical applications of the BC856BQCZ transistor?

    It is used in automotive, industrial, consumer electronics, power management, and computing systems.

  8. Does the BC856BQCZ support Automatic Optical Inspection (AOI) of solder joints?

    Yes, it is suitable for AOI of solder joints.

  9. What is the minimum current gain (hFE) of the BC856BQCZ transistor?

    The minimum current gain (hFE) is 220.

  10. What is the maximum junction temperature (TJ) of the BC856BQCZ transistor?

    The maximum junction temperature (TJ) is 150°C.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:360 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1412D-3
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Similar Products

Part Number BC856BQCZ BC856AQCZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V 65 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 125 @ 2mA, 5V
Power - Max 360 mW 360 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3 DFN1412D-3

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