BC847BS/DG/B4X
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Nexperia USA Inc. BC847BS/DG/B4X

Manufacturer No:
BC847BS/DG/B4X
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANSISTOR GEN PURP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847BS/DG/B4X is a general-purpose NPN/NPN bipolar transistor array produced by Nexperia USA Inc. This component is designed for a wide range of applications, including general-purpose switching and amplification. It is packaged in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package, making it suitable for space-constrained designs. The BC847BS/DG/B4X is also compliant with the AEC-Q101 standard, which ensures its reliability and performance in automotive and other demanding environments.

Key Specifications

ParameterConditionsMinTypMaxUnit
Collector-Emitter Voltage (VCEO)Open base----45V
Collector Current (IC)------100mA
DC Current Gain (hFE)VCE = 5 V; IC = 2 mA; Tamb = 25 °C200--450--
Collector-Base Breakdown Voltage (VBR(CBO))IC = 100 µA; IE = 0 A; Tamb = 25 °C50----V
Collector-Emitter Breakdown Voltage (VBR(CEO))IC = 2 mA; IB = 0 A; Tamb = 25 °C45----V
Emitter-Base Breakdown Voltage (VBR(EBO))IC = 0 A; IE = 100 µA; Tamb = 25 °C5----V
Thermal Resistance from Junction to Ambient (Rth(j-a))In free air----568K/W
Power Dissipation (Ptot)------400mW
Package------SOT363 (SC-88)--

Key Features

  • Low Collector Capacitance: Reduces the impact on high-frequency performance.
  • Low Collector-Emitter Saturation Voltage: Minimizes power losses in switching applications.
  • Closely Matched Current Gain: Ensures consistent performance across the transistor pair.
  • Compact Package: SOT363 (SC-88) package saves board space and is suitable for surface-mount technology.
  • No Mutual Interference: The design of the transistor pair minimizes interference between the transistors.
  • AEC-Q101 Compliant: Suitable for automotive and other demanding applications.

Applications

The BC847BS/DG/B4X is versatile and can be used in a variety of applications, including:

  • General-Purpose Switching and Amplification: Suitable for both switching and amplification roles in electronic circuits.
  • Automotive Systems: Compliant with AEC-Q101, making it reliable for use in automotive electronics.
  • Industrial and Consumer Electronics: Can be used in various industrial and consumer electronic devices where general-purpose transistors are required.

Q & A

  1. What is the collector-emitter voltage rating of the BC847BS/DG/B4X?
    The collector-emitter voltage (VCEO) is rated at 45 V.
  2. What is the maximum collector current for the BC847BS/DG/B4X?
    The maximum collector current (IC) is 100 mA.
  3. What is the typical DC current gain (hFE) of the BC847BS/DG/B4X?
    The typical DC current gain (hFE) is between 200 and 450.
  4. What package type is used for the BC847BS/DG/B4X?
    The BC847BS/DG/B4X is packaged in a SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
  5. Is the BC847BS/DG/B4X compliant with automotive standards?
    Yes, it is compliant with the AEC-Q101 standard, making it suitable for automotive applications.
  6. What are the key benefits of the closely matched current gain in the BC847BS/DG/B4X?
    The closely matched current gain ensures consistent performance across the transistor pair, reducing variability in circuit behavior.
  7. How does the low collector-emitter saturation voltage benefit the BC847BS/DG/B4X?
    The low collector-emitter saturation voltage minimizes power losses in switching applications, improving overall efficiency.
  8. What is the thermal resistance from junction to ambient for the BC847BS/DG/B4X?
    The thermal resistance from junction to ambient (Rth(j-a)) is 568 K/W.
  9. What is the maximum power dissipation for the BC847BS/DG/B4X?
    The maximum power dissipation (Ptot) is 400 mW.
  10. Where can I find more detailed technical information about the BC847BS/DG/B4X?
    You can find detailed technical information in the datasheet available on the Nexperia website or through authorized distributors.

Product Attributes

Transistor Type:NPN, PNP
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):45V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:400mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
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