Overview
The BC847BS/DG/B4X is a general-purpose NPN/NPN bipolar transistor array produced by Nexperia USA Inc. This component is designed for a wide range of applications, including general-purpose switching and amplification. It is packaged in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package, making it suitable for space-constrained designs. The BC847BS/DG/B4X is also compliant with the AEC-Q101 standard, which ensures its reliability and performance in automotive and other demanding environments.
Key Specifications
Parameter | Conditions | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Collector-Emitter Voltage (VCEO) | Open base | -- | -- | 45 | V |
Collector Current (IC) | -- | -- | -- | 100 | mA |
DC Current Gain (hFE) | VCE = 5 V; IC = 2 mA; Tamb = 25 °C | 200 | -- | 450 | -- |
Collector-Base Breakdown Voltage (VBR(CBO)) | IC = 100 µA; IE = 0 A; Tamb = 25 °C | 50 | -- | -- | V |
Collector-Emitter Breakdown Voltage (VBR(CEO)) | IC = 2 mA; IB = 0 A; Tamb = 25 °C | 45 | -- | -- | V |
Emitter-Base Breakdown Voltage (VBR(EBO)) | IC = 0 A; IE = 100 µA; Tamb = 25 °C | 5 | -- | -- | V |
Thermal Resistance from Junction to Ambient (Rth(j-a)) | In free air | -- | -- | 568 | K/W |
Power Dissipation (Ptot) | -- | -- | -- | 400 | mW |
Package | -- | -- | -- | SOT363 (SC-88) | -- |
Key Features
- Low Collector Capacitance: Reduces the impact on high-frequency performance.
- Low Collector-Emitter Saturation Voltage: Minimizes power losses in switching applications.
- Closely Matched Current Gain: Ensures consistent performance across the transistor pair.
- Compact Package: SOT363 (SC-88) package saves board space and is suitable for surface-mount technology.
- No Mutual Interference: The design of the transistor pair minimizes interference between the transistors.
- AEC-Q101 Compliant: Suitable for automotive and other demanding applications.
Applications
The BC847BS/DG/B4X is versatile and can be used in a variety of applications, including:
- General-Purpose Switching and Amplification: Suitable for both switching and amplification roles in electronic circuits.
- Automotive Systems: Compliant with AEC-Q101, making it reliable for use in automotive electronics.
- Industrial and Consumer Electronics: Can be used in various industrial and consumer electronic devices where general-purpose transistors are required.
Q & A
- What is the collector-emitter voltage rating of the BC847BS/DG/B4X?
The collector-emitter voltage (VCEO) is rated at 45 V. - What is the maximum collector current for the BC847BS/DG/B4X?
The maximum collector current (IC) is 100 mA. - What is the typical DC current gain (hFE) of the BC847BS/DG/B4X?
The typical DC current gain (hFE) is between 200 and 450. - What package type is used for the BC847BS/DG/B4X?
The BC847BS/DG/B4X is packaged in a SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. - Is the BC847BS/DG/B4X compliant with automotive standards?
Yes, it is compliant with the AEC-Q101 standard, making it suitable for automotive applications. - What are the key benefits of the closely matched current gain in the BC847BS/DG/B4X?
The closely matched current gain ensures consistent performance across the transistor pair, reducing variability in circuit behavior. - How does the low collector-emitter saturation voltage benefit the BC847BS/DG/B4X?
The low collector-emitter saturation voltage minimizes power losses in switching applications, improving overall efficiency. - What is the thermal resistance from junction to ambient for the BC847BS/DG/B4X?
The thermal resistance from junction to ambient (Rth(j-a)) is 568 K/W. - What is the maximum power dissipation for the BC847BS/DG/B4X?
The maximum power dissipation (Ptot) is 400 mW. - Where can I find more detailed technical information about the BC847BS/DG/B4X?
You can find detailed technical information in the datasheet available on the Nexperia website or through authorized distributors.