BC817-25QBH-QZ
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Nexperia USA Inc. BC817-25QBH-QZ

Manufacturer No:
BC817-25QBH-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.5A DFN1110D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817-25QBH-QZ is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is part of the BC817QBH-Q series, designed for various applications requiring switching and amplification. It is packaged in a DFN1110D-3 (SOT8015) package, which is a plastic, leadless extremely thin small outline package with side-wettable flanks (SWF), making it suitable for space-restricted applications.

Key Specifications

Parameter Conditions Min Typ Max Unit
VCEO (Collector-Emitter Voltage) Open base; Tamb = 25 °C - - 45 V
IC (Collector Current) Tamb = 25 °C - - 500 mA
ICM (Peak Collector Current) Single pulse; tp ≤ 1 ms; Tamb = 25 °C - - 1 A
hFE (DC Current Gain) VCE = 1 V; IC = 100 mA; Tamb = 25 °C 160 - 400 -
VCEsat (Collector-Emitter Saturation Voltage) IC = 500 mA; IB = 50 mA; Tamb = 25 °C - - 700 mV
fT (Transition Frequency) VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C 100 - - MHz
TJ (Junction Temperature) - - - 175 °C
Package - - - DFN1110D-3 (SOT8015) -

Key Features

  • General-purpose switching and amplification: Suitable for a wide range of applications requiring general-purpose switching and amplification.
  • High collector current: Maximum collector current of 500 mA.
  • High collector-emitter voltage: Maximum collector-emitter voltage of 45 V.
  • Low VCEsat: Collector-emitter saturation voltage as low as 700 mV.
  • High transition frequency: Transition frequency of 100 MHz.
  • Compact package: DFN1110D-3 (SOT8015) package, ideal for space-restricted applications.
  • RoHS compliant: Lead-free and RoHS compliant, ensuring environmental sustainability.

Applications

  • General-purpose electronics: Suitable for various general-purpose electronic circuits requiring switching and amplification.
  • Automotive systems: Part of the AEC-Q101 series, making it suitable for automotive applications.
  • Industrial control systems: Used in industrial control systems due to its reliability and performance.
  • Consumer electronics: Found in consumer electronics such as audio equipment, power supplies, and other electronic devices.

Q & A

  1. What is the maximum collector current of the BC817-25QBH-QZ transistor?

    The maximum collector current is 500 mA.

  2. What is the maximum collector-emitter voltage of the BC817-25QBH-QZ transistor?

    The maximum collector-emitter voltage is 45 V.

  3. What is the transition frequency of the BC817-25QBH-QZ transistor?

    The transition frequency is 100 MHz.

  4. What package type is used for the BC817-25QBH-QZ transistor?

    The transistor is packaged in a DFN1110D-3 (SOT8015) package.

  5. Is the BC817-25QBH-QZ transistor RoHS compliant?

    Yes, the transistor is lead-free and RoHS compliant.

  6. What is the maximum junction temperature for the BC817-25QBH-QZ transistor?

    The maximum junction temperature is 175 °C.

  7. What are some common applications of the BC817-25QBH-QZ transistor?

    It is used in general-purpose electronics, automotive systems, industrial control systems, and consumer electronics.

  8. What is the collector-emitter saturation voltage of the BC817-25QBH-QZ transistor?

    The collector-emitter saturation voltage is as low as 700 mV.

  9. What is the DC current gain (hFE) of the BC817-25QBH-QZ transistor?

    The DC current gain (hFE) is between 160 and 400.

  10. How can I obtain samples of the BC817-25QBH-QZ transistor?

    Samples can be ordered via Nexperia's sales organization or through their network of global and regional distributors.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
Power - Max:420 mW
Frequency - Transition:100MHz
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1110D-3
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Similar Products

Part Number BC817-25QBH-QZ BC817-25QCH-QZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V 160 @ 100mA, 1V
Power - Max 420 mW 455 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1110D-3 DFN1412D-3

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