BC817-25QBH-QZ
  • Share:

Nexperia USA Inc. BC817-25QBH-QZ

Manufacturer No:
BC817-25QBH-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.5A DFN1110D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817-25QBH-QZ is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is part of the BC817QBH-Q series, designed for various applications requiring switching and amplification. It is packaged in a DFN1110D-3 (SOT8015) package, which is a plastic, leadless extremely thin small outline package with side-wettable flanks (SWF), making it suitable for space-restricted applications.

Key Specifications

Parameter Conditions Min Typ Max Unit
VCEO (Collector-Emitter Voltage) Open base; Tamb = 25 °C - - 45 V
IC (Collector Current) Tamb = 25 °C - - 500 mA
ICM (Peak Collector Current) Single pulse; tp ≤ 1 ms; Tamb = 25 °C - - 1 A
hFE (DC Current Gain) VCE = 1 V; IC = 100 mA; Tamb = 25 °C 160 - 400 -
VCEsat (Collector-Emitter Saturation Voltage) IC = 500 mA; IB = 50 mA; Tamb = 25 °C - - 700 mV
fT (Transition Frequency) VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C 100 - - MHz
TJ (Junction Temperature) - - - 175 °C
Package - - - DFN1110D-3 (SOT8015) -

Key Features

  • General-purpose switching and amplification: Suitable for a wide range of applications requiring general-purpose switching and amplification.
  • High collector current: Maximum collector current of 500 mA.
  • High collector-emitter voltage: Maximum collector-emitter voltage of 45 V.
  • Low VCEsat: Collector-emitter saturation voltage as low as 700 mV.
  • High transition frequency: Transition frequency of 100 MHz.
  • Compact package: DFN1110D-3 (SOT8015) package, ideal for space-restricted applications.
  • RoHS compliant: Lead-free and RoHS compliant, ensuring environmental sustainability.

Applications

  • General-purpose electronics: Suitable for various general-purpose electronic circuits requiring switching and amplification.
  • Automotive systems: Part of the AEC-Q101 series, making it suitable for automotive applications.
  • Industrial control systems: Used in industrial control systems due to its reliability and performance.
  • Consumer electronics: Found in consumer electronics such as audio equipment, power supplies, and other electronic devices.

Q & A

  1. What is the maximum collector current of the BC817-25QBH-QZ transistor?

    The maximum collector current is 500 mA.

  2. What is the maximum collector-emitter voltage of the BC817-25QBH-QZ transistor?

    The maximum collector-emitter voltage is 45 V.

  3. What is the transition frequency of the BC817-25QBH-QZ transistor?

    The transition frequency is 100 MHz.

  4. What package type is used for the BC817-25QBH-QZ transistor?

    The transistor is packaged in a DFN1110D-3 (SOT8015) package.

  5. Is the BC817-25QBH-QZ transistor RoHS compliant?

    Yes, the transistor is lead-free and RoHS compliant.

  6. What is the maximum junction temperature for the BC817-25QBH-QZ transistor?

    The maximum junction temperature is 175 °C.

  7. What are some common applications of the BC817-25QBH-QZ transistor?

    It is used in general-purpose electronics, automotive systems, industrial control systems, and consumer electronics.

  8. What is the collector-emitter saturation voltage of the BC817-25QBH-QZ transistor?

    The collector-emitter saturation voltage is as low as 700 mV.

  9. What is the DC current gain (hFE) of the BC817-25QBH-QZ transistor?

    The DC current gain (hFE) is between 160 and 400.

  10. How can I obtain samples of the BC817-25QBH-QZ transistor?

    Samples can be ordered via Nexperia's sales organization or through their network of global and regional distributors.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
Power - Max:420 mW
Frequency - Transition:100MHz
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1110D-3
0 Remaining View Similar

In Stock

$0.32
2,957

Please send RFQ , we will respond immediately.

Same Series
DD62M3200V50/AA
DD62M3200V50/AA
CONN D-SUB HD PLUG 62P VERT SLDR
CBC46W4S100T2X
CBC46W4S100T2X
CONN D-SUB RCPT 46POS CRIMP
DD15S10LVLS
DD15S10LVLS
CONN D-SUB HD RCPT 15POS CRIMP
RD15S10HV50/AA
RD15S10HV50/AA
CONN D-SUB RCPT 15POS CRIMP
DD26M20HT20/AA
DD26M20HT20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20JV5S/AA
DD15S20JV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2F000
DD26S2F000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T0
DD26S2S50T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V30
DD26S2S50V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V50
DD26S2S50V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L0X
DD26S20L0X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BC817-25QBH-QZ BC817-25QCH-QZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V 160 @ 100mA, 1V
Power - Max 420 mW 455 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1110D-3 DFN1412D-3

Related Product By Categories

MJD42CT4G
MJD42CT4G
onsemi
TRANS PNP 100V 6A DPAK
BCP56,115
BCP56,115
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BC817-25W_R1_00001
BC817-25W_R1_00001
Panjit International Inc.
TRANS NPN 45V 0.5A SOT323
BC848BL3E6327XTMA1
BC848BL3E6327XTMA1
Infineon Technologies
BC848 - GENERAL PURPOSE TRANSIST
BCP56TA
BCP56TA
Diodes Incorporated
TRANS NPN 80V 1A SOT223-3
2SC3648T-TD-E
2SC3648T-TD-E
onsemi
TRANS NPN 160V 0.7A PCP
BCP53-10T115
BCP53-10T115
NXP USA Inc.
TRANS PNP 80V 1A SOT223
BC857CQB-QZ
BC857CQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC817K-40HR
BC817K-40HR
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB
2N2907AP
2N2907AP
Microchip Technology
SMALL-SIGNAL BJT
BCX56-16115
BCX56-16115
NXP USA Inc.
NOW NEXPERIA SMALL SIGNAL BIPOLA
DS2003CMX/NOPB
DS2003CMX/NOPB
National Semiconductor
SMALL SIGNAL BIPOLAR TRANSISTOR,

Related Product By Brand

BZA462A,125
BZA462A,125
Nexperia USA Inc.
TVS DIODE 6.2VWM 9VC 6TSOP
BCP56-10TX
BCP56-10TX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BCP54-10,135
BCP54-10,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT223
BUK9Y14-40B,115
BUK9Y14-40B,115
Nexperia USA Inc.
MOSFET N-CH 40V 56A LFPAK56
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
HEF4541BT,653
HEF4541BT,653
Nexperia USA Inc.
IC OSC PROG TIMER 36MHZ 14SOIC
74LVCH8T245BQ118
74LVCH8T245BQ118
Nexperia USA Inc.
IC TRANSLATR TXRX 5.5V 24DHVQFN
74HCT125DB,118
74HCT125DB,118
Nexperia USA Inc.
IC BUF NON-INVERT 5.5V 14SSOP
74HC85DB,118
74HC85DB,118
Nexperia USA Inc.
NEXPERIA 74HC85DB - MAGNITUDE CO
74HCT1G00GW,165
74HCT1G00GW,165
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
74AHC04D-Q100J
74AHC04D-Q100J
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14SO
BAS116H
BAS116H
Nexperia USA Inc.
NOW NEXPERIA BAS116H - RECTIFIER