BC807-40HR
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Nexperia USA Inc. BC807-40HR

Manufacturer No:
BC807-40HR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.5A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-40HR is a PNP general-purpose bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed for medium-power circuit applications and is known for its reliability and performance in various electronic designs. It is packaged in a SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, making it suitable for compact and efficient circuit designs.

Key Specifications

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 45 V
Current - Collector (Ic) (Max) 500 mA
Power - Max 320 mW
Frequency - Transition (Min) 80 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Operating Temperature 150°C (TJ) °C
Package SOT23 (TO-236AB)
Mounting Type Surface Mount
RoHS Compliance Yes

Key Features

  • General-purpose switching and amplification: Suitable for a wide range of applications requiring medium-power handling.
  • High current capability: Supports up to 500 mA collector current.
  • High voltage handling: With a collector-emitter breakdown voltage of 45 V.
  • Compact packaging: SOT23 (TO-236AB) package for space-efficient designs.
  • Reliable performance: Ensures consistent operation across various environmental conditions.
  • RoHS compliance: Environmentally friendly, meeting RoHS standards.

Applications

The BC807-40HR transistor is versatile and can be used in various applications across different industries, including:

  • Automotive systems: For general-purpose switching and amplification in automotive electronics.
  • Industrial control systems: In medium-power circuit applications requiring reliable performance.
  • Consumer electronics: Suitable for use in audio amplifiers, power supplies, and other consumer electronic devices.
  • Power management systems: For applications requiring efficient power handling and switching.

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the BC807-40HR transistor?

    The maximum collector-emitter breakdown voltage is 45 V.

  2. What is the maximum collector current of the BC807-40HR transistor?

    The maximum collector current is 500 mA.

  3. What is the package type of the BC807-40HR transistor?

    The package type is SOT23 (TO-236AB).

  4. Is the BC807-40HR transistor RoHS compliant?

    Yes, the BC807-40HR transistor is RoHS compliant.

  5. What is the operating temperature range of the BC807-40HR transistor?

    The operating temperature range is up to 150°C (TJ).

  6. What are the typical applications of the BC807-40HR transistor?

    Typical applications include general-purpose switching and amplification in automotive, industrial, and consumer electronics.

  7. What is the transition frequency of the BC807-40HR transistor?

    The transition frequency is 80 MHz.

  8. What is the minimum DC current gain (hFE) of the BC807-40HR transistor?

    The minimum DC current gain (hFE) is 250 @ 100mA, 1V.

  9. What is the maximum power dissipation of the BC807-40HR transistor?

    The maximum power dissipation is 320 mW.

  10. Is the BC807-40HR transistor suitable for high-current applications?

    Yes, it is suitable for applications requiring up to 500 mA collector current.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:320 mW
Frequency - Transition:80MHz
Operating Temperature:-55°C ~ 175°C (TA)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Similar Products

Part Number BC807-40HR BC807-40HZ BC807-40LR
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V 250 @ 100mA, 1V
Power - Max 320 mW 320 mW 250 mW
Frequency - Transition 80MHz 80MHz 80MHz
Operating Temperature -55°C ~ 175°C (TA) 175°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB TO-236AB

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