BAT85,133
  • Share:

Nexperia USA Inc. BAT85,133

Manufacturer No:
BAT85,133
Manufacturer:
Nexperia USA Inc.
Package:
Cut Tape (CT)
Description:
DIODE SCHOTTKY 30V 200MA DO34
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAT85,133 is a Schottky barrier single diode manufactured by Nexperia USA Inc. This component is encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package, making it suitable for various high-performance applications. The diode features an integrated guard ring for stress protection, enhancing its reliability and durability.

Key Specifications

Type numberPackage versionPackage nameSize (mm)VR [max] (V)IF [max] (mA)Cd [max] (pF)@VR (V)IR [max] (µA)@VR (V)
BAT85SOD68DO-343.04 x 1.630.0200.010.01.02.025.0

Key Features

  • Planar Schottky barrier diode with an integrated guard ring for stress protection.
  • Hermetically-sealed leaded glass package (SOD68 or DO-34).
  • Low forward voltage.
  • Suitable for mounting on a 2 E (5.08 mm) pitch.

Applications

  • Ultra high-speed switching.
  • Voltage clamping.
  • Protection circuits.
  • Blocking diodes.

Q & A

  1. What is the BAT85,133 diode used for? The BAT85,133 is used in ultra high-speed switching, voltage clamping, protection circuits, and as blocking diodes.
  2. What type of package does the BAT85,133 come in? The BAT85,133 comes in a hermetically-sealed subminiature SOD68 (DO-34) package.
  3. What are the key features of the BAT85,133 diode? Key features include a planar Schottky barrier diode with an integrated guard ring, low forward voltage, and suitability for mounting on a 2 E (5.08 mm) pitch.
  4. What is the maximum forward current (IF) of the BAT85,133 diode? The maximum forward current (IF) is 200 mA.
  5. What is the maximum reverse voltage (VR) of the BAT85,133 diode? The maximum reverse voltage (VR) is 30 V.
  6. Is the BAT85,133 diode RoHS compliant? Yes, the BAT85,133 diode is RoHS compliant.
  7. What is the typical capacitance (Cd) of the BAT85,133 diode? The typical capacitance (Cd) is 10 pF at 1 V.
  8. What are the dimensions of the BAT85,133 package? The package dimensions are 3.04 mm x 1.6 mm.
  9. Who manufactures the BAT85,133 diode? The BAT85,133 diode is manufactured by Nexperia USA Inc.
  10. Where can I find more detailed documentation for the BAT85,133 diode? Detailed documentation, including datasheets and SPICE models, can be found on the Nexperia website.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:800 mV @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:2 µA @ 25 V
Capacitance @ Vr, F:10pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AG, DO-34, Axial
Supplier Device Package:DO-34
Operating Temperature - Junction:125°C (Max)
0 Remaining View Similar

In Stock

$0.47
240

Please send RFQ , we will respond immediately.

Same Series
BAT85,113
BAT85,113
DIODE SCHOTTKY 30V 200MA DO34

Similar Products

Part Number BAT85,133 BAT86,133 BAT85,113
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 50 V 30 V
Current - Average Rectified (Io) 200mA (DC) 200mA 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 800 mV @ 100 mA 900 mV @ 100 mA 800 mV @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 4 ns 4 ns 4 ns
Current - Reverse Leakage @ Vr 2 µA @ 25 V 5 µA @ 40 V 2 µA @ 25 V
Capacitance @ Vr, F 10pF @ 1V, 1MHz 8pF @ 1V, 1MHz 10pF @ 1V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-204AG, DO-34, Axial DO-204AG, DO-34, Axial DO-204AG, DO-34, Axial
Supplier Device Package DO-34 DO-34 DO-34
Operating Temperature - Junction 125°C (Max) 125°C (Max) 125°C (Max)

Related Product By Categories

1N4148UR-1
1N4148UR-1
Microchip Technology
DIODE GEN PURP 75V 200MA DO213AA
NSR02F30NXT5G
NSR02F30NXT5G
onsemi
DIODE SCHOTTKY 30V 200MA 2DSN
MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
BAS20-7-F
BAS20-7-F
Diodes Incorporated
DIODE GP 150V 200MA SOT23-3
BAS40WS_R1_00001
BAS40WS_R1_00001
Panjit International Inc.
SOD-323, SKY
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
MURA160T3G
MURA160T3G
onsemi
DIODE GEN PURP 600V 1A SMA
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
MBRD835LG
MBRD835LG
onsemi
DIODE SCHOTTKY 35V 8A DPAK
BAT54-D87Z
BAT54-D87Z
onsemi
30V SOT23 SCHOTTKY DIODE
MBRS130LT3
MBRS130LT3
onsemi
DIODE SCHOTTKY 30V 1A SMB
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35

Related Product By Brand

BZA462A,125
BZA462A,125
Nexperia USA Inc.
TVS DIODE 6.2VWM 9VC 6TSOP
BAS40-07,215
BAS40-07,215
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT143B
BZX384-C3V3,115
BZX384-C3V3,115
Nexperia USA Inc.
DIODE ZENER 3.3V 300MW SOD323
PDZ12B,115
PDZ12B,115
Nexperia USA Inc.
DIODE ZENER 12V 400MW SOD323
BZX384-B10,115
BZX384-B10,115
Nexperia USA Inc.
DIODE ZENER 10V 300MW SOD323
BC807-25QCZ
BC807-25QCZ
Nexperia USA Inc.
TRANS 45V 0.5A DFN1412D-3
2N7002P,235
2N7002P,235
Nexperia USA Inc.
MOSFET N-CH 60V 360MA TO236AB
BUK9212-55B,118
BUK9212-55B,118
Nexperia USA Inc.
MOSFET N-CH 55V 75A DPAK
74LVC245AD,112
74LVC245AD,112
Nexperia USA Inc.
IC TXRX NON-INVERT 3.6V 20SO
74HC164D,653
74HC164D,653
Nexperia USA Inc.
IC SHIFT REGST 8BIT SI-PO 14SOIC
BC807K-25,235
BC807K-25,235
Nexperia USA Inc.
BC807K-25 - 45 V, 500 MA PNP GEN
BZX84-C33
BZX84-C33
Nexperia USA Inc.
BZX84 SERIES - VOLTAGE REGULATOR