BAT85,133
  • Share:

Nexperia USA Inc. BAT85,133

Manufacturer No:
BAT85,133
Manufacturer:
Nexperia USA Inc.
Package:
Cut Tape (CT)
Description:
DIODE SCHOTTKY 30V 200MA DO34
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAT85,133 is a Schottky barrier single diode manufactured by Nexperia USA Inc. This component is encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package, making it suitable for various high-performance applications. The diode features an integrated guard ring for stress protection, enhancing its reliability and durability.

Key Specifications

Type numberPackage versionPackage nameSize (mm)VR [max] (V)IF [max] (mA)Cd [max] (pF)@VR (V)IR [max] (µA)@VR (V)
BAT85SOD68DO-343.04 x 1.630.0200.010.01.02.025.0

Key Features

  • Planar Schottky barrier diode with an integrated guard ring for stress protection.
  • Hermetically-sealed leaded glass package (SOD68 or DO-34).
  • Low forward voltage.
  • Suitable for mounting on a 2 E (5.08 mm) pitch.

Applications

  • Ultra high-speed switching.
  • Voltage clamping.
  • Protection circuits.
  • Blocking diodes.

Q & A

  1. What is the BAT85,133 diode used for? The BAT85,133 is used in ultra high-speed switching, voltage clamping, protection circuits, and as blocking diodes.
  2. What type of package does the BAT85,133 come in? The BAT85,133 comes in a hermetically-sealed subminiature SOD68 (DO-34) package.
  3. What are the key features of the BAT85,133 diode? Key features include a planar Schottky barrier diode with an integrated guard ring, low forward voltage, and suitability for mounting on a 2 E (5.08 mm) pitch.
  4. What is the maximum forward current (IF) of the BAT85,133 diode? The maximum forward current (IF) is 200 mA.
  5. What is the maximum reverse voltage (VR) of the BAT85,133 diode? The maximum reverse voltage (VR) is 30 V.
  6. Is the BAT85,133 diode RoHS compliant? Yes, the BAT85,133 diode is RoHS compliant.
  7. What is the typical capacitance (Cd) of the BAT85,133 diode? The typical capacitance (Cd) is 10 pF at 1 V.
  8. What are the dimensions of the BAT85,133 package? The package dimensions are 3.04 mm x 1.6 mm.
  9. Who manufactures the BAT85,133 diode? The BAT85,133 diode is manufactured by Nexperia USA Inc.
  10. Where can I find more detailed documentation for the BAT85,133 diode? Detailed documentation, including datasheets and SPICE models, can be found on the Nexperia website.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:800 mV @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:2 µA @ 25 V
Capacitance @ Vr, F:10pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AG, DO-34, Axial
Supplier Device Package:DO-34
Operating Temperature - Junction:125°C (Max)
0 Remaining View Similar

In Stock

$0.47
240

Please send RFQ , we will respond immediately.

Same Series
BAT85,113
BAT85,113
DIODE SCHOTTKY 30V 200MA DO34

Similar Products

Part Number BAT85,133 BAT86,133 BAT85,113
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 50 V 30 V
Current - Average Rectified (Io) 200mA (DC) 200mA 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 800 mV @ 100 mA 900 mV @ 100 mA 800 mV @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 4 ns 4 ns 4 ns
Current - Reverse Leakage @ Vr 2 µA @ 25 V 5 µA @ 40 V 2 µA @ 25 V
Capacitance @ Vr, F 10pF @ 1V, 1MHz 8pF @ 1V, 1MHz 10pF @ 1V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-204AG, DO-34, Axial DO-204AG, DO-34, Axial DO-204AG, DO-34, Axial
Supplier Device Package DO-34 DO-34 DO-34
Operating Temperature - Junction 125°C (Max) 125°C (Max) 125°C (Max)

Related Product By Categories

STPS2150A
STPS2150A
STMicroelectronics
DIODE SCHOTTKY 150V 2A SMA
1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
MBRM120LT3G
MBRM120LT3G
onsemi
DIODE SCHOTTKY 20V 1A POWERMITE
BAV102
BAV102
onsemi
DIODE GEN PURP 150V 200MA LL34
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
MBRA120ET3G
MBRA120ET3G
onsemi
DIODE SCHOTTKY 20V 1A SMA
1N4148WQ-13-F
1N4148WQ-13-F
Diodes Incorporated
SWITCHING DIODE SOD123 T&R 10K
MUR160A
MUR160A
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
STPS8L30B
STPS8L30B
STMicroelectronics
DIODE SCHOTTKY 30V 8A DPAK
NRVBS3201T3G
NRVBS3201T3G
onsemi
DIODE SCHOTTKY 200V 3A SMC

Related Product By Brand

BAT54S-QR
BAT54S-QR
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BAT720,235
BAT720,235
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA TO236AB
PDZ22B-QZ
PDZ22B-QZ
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BCX51-16,115
BCX51-16,115
Nexperia USA Inc.
TRANS PNP 45V 1A SOT89
PBSS5540Z,115
PBSS5540Z,115
Nexperia USA Inc.
TRANS PNP 40V 5A SOT223
MJD44H11J
MJD44H11J
Nexperia USA Inc.
TRANS NPN 80V 8A DPAK
PBSS304NZ,135
PBSS304NZ,135
Nexperia USA Inc.
TRANS NPN 60V 5.2A SOT223
BUK9K6R2-40E,115
BUK9K6R2-40E,115
Nexperia USA Inc.
MOSFET 2N-CH 40V 40A LFPAK56D
BUK7Y12-40EX
BUK7Y12-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 52A LFPAK56
74AVCH8T245PW,112
74AVCH8T245PW,112
Nexperia USA Inc.
IC TRANSLATION TXRX 3.6V 24TSSOP
74HC1G00GW-Q100H
74HC1G00GW-Q100H
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
74LVC373ADB112
74LVC373ADB112
Nexperia USA Inc.
NOW NEXPERIA 74LVC373ADB - BUS D