BAT85,133
  • Share:

Nexperia USA Inc. BAT85,133

Manufacturer No:
BAT85,133
Manufacturer:
Nexperia USA Inc.
Package:
Cut Tape (CT)
Description:
DIODE SCHOTTKY 30V 200MA DO34
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAT85,133 is a Schottky barrier single diode manufactured by Nexperia USA Inc. This component is encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package, making it suitable for various high-performance applications. The diode features an integrated guard ring for stress protection, enhancing its reliability and durability.

Key Specifications

Type numberPackage versionPackage nameSize (mm)VR [max] (V)IF [max] (mA)Cd [max] (pF)@VR (V)IR [max] (µA)@VR (V)
BAT85SOD68DO-343.04 x 1.630.0200.010.01.02.025.0

Key Features

  • Planar Schottky barrier diode with an integrated guard ring for stress protection.
  • Hermetically-sealed leaded glass package (SOD68 or DO-34).
  • Low forward voltage.
  • Suitable for mounting on a 2 E (5.08 mm) pitch.

Applications

  • Ultra high-speed switching.
  • Voltage clamping.
  • Protection circuits.
  • Blocking diodes.

Q & A

  1. What is the BAT85,133 diode used for? The BAT85,133 is used in ultra high-speed switching, voltage clamping, protection circuits, and as blocking diodes.
  2. What type of package does the BAT85,133 come in? The BAT85,133 comes in a hermetically-sealed subminiature SOD68 (DO-34) package.
  3. What are the key features of the BAT85,133 diode? Key features include a planar Schottky barrier diode with an integrated guard ring, low forward voltage, and suitability for mounting on a 2 E (5.08 mm) pitch.
  4. What is the maximum forward current (IF) of the BAT85,133 diode? The maximum forward current (IF) is 200 mA.
  5. What is the maximum reverse voltage (VR) of the BAT85,133 diode? The maximum reverse voltage (VR) is 30 V.
  6. Is the BAT85,133 diode RoHS compliant? Yes, the BAT85,133 diode is RoHS compliant.
  7. What is the typical capacitance (Cd) of the BAT85,133 diode? The typical capacitance (Cd) is 10 pF at 1 V.
  8. What are the dimensions of the BAT85,133 package? The package dimensions are 3.04 mm x 1.6 mm.
  9. Who manufactures the BAT85,133 diode? The BAT85,133 diode is manufactured by Nexperia USA Inc.
  10. Where can I find more detailed documentation for the BAT85,133 diode? Detailed documentation, including datasheets and SPICE models, can be found on the Nexperia website.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:800 mV @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:2 µA @ 25 V
Capacitance @ Vr, F:10pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AG, DO-34, Axial
Supplier Device Package:DO-34
Operating Temperature - Junction:125°C (Max)
0 Remaining View Similar

In Stock

$0.47
240

Please send RFQ , we will respond immediately.

Same Series
BAT85,113
BAT85,113
DIODE SCHOTTKY 30V 200MA DO34

Similar Products

Part Number BAT85,133 BAT86,133 BAT85,113
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 50 V 30 V
Current - Average Rectified (Io) 200mA (DC) 200mA 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 800 mV @ 100 mA 900 mV @ 100 mA 800 mV @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 4 ns 4 ns 4 ns
Current - Reverse Leakage @ Vr 2 µA @ 25 V 5 µA @ 40 V 2 µA @ 25 V
Capacitance @ Vr, F 10pF @ 1V, 1MHz 8pF @ 1V, 1MHz 10pF @ 1V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-204AG, DO-34, Axial DO-204AG, DO-34, Axial DO-204AG, DO-34, Axial
Supplier Device Package DO-34 DO-34 DO-34
Operating Temperature - Junction 125°C (Max) 125°C (Max) 125°C (Max)

Related Product By Categories

STPS2150A
STPS2150A
STMicroelectronics
DIODE SCHOTTKY 150V 2A SMA
BAT54WS_R1_00001
BAT54WS_R1_00001
Panjit International Inc.
SOD-323, SKY
1N4001G-T
1N4001G-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
BAS16L-G3-08
BAS16L-G3-08
Vishay General Semiconductor - Diodes Division
SWITCHING DIODE GENPURP DFN1006-
MBR10100F_T0_00001
MBR10100F_T0_00001
Panjit International Inc.
10 AMPERES SCHOTTKY BARRIER RECT
NSVBAS21AHT1G
NSVBAS21AHT1G
onsemi
DIODE GEN PURP 250V 200MA SOD323
STTH1R04U
STTH1R04U
STMicroelectronics
DIODE GEN PURP 400V 1A SMB
STTH108A
STTH108A
STMicroelectronics
DIODE GEN PURP 800V 1A SMA
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
BAV21WS RRG
BAV21WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
STPS2H100AFN
STPS2H100AFN
STMicroelectronics
100 V, 2 A POWER SCHOTTKY RECTIF
NRVBS260NT3G
NRVBS260NT3G
onsemi
DIODE SCHOTTKY 2A 60V 1202 SMB2

Related Product By Brand

PESD5V0S1BLD,315
PESD5V0S1BLD,315
Nexperia USA Inc.
TVS DIODE 5VWM 14VC DFN1006D-2
BZX79-C18,133
BZX79-C18,133
Nexperia USA Inc.
DIODE ZENER 18V 400MW ALF2
BZX84-C47/DG/B2,23
BZX84-C47/DG/B2,23
Nexperia USA Inc.
DIODE ZENER 47V 250MW TO236AB
BC807-25QCZ
BC807-25QCZ
Nexperia USA Inc.
TRANS 45V 0.5A DFN1412D-3
PBSS8110TVL
PBSS8110TVL
Nexperia USA Inc.
PBSS8110T/SOT23/TO-236AB
PDTC123JT,215
PDTC123JT,215
Nexperia USA Inc.
TRANS PREBIAS NPN 50V TO236AB
PMZ600UNEZ
PMZ600UNEZ
Nexperia USA Inc.
MOSFET N-CH 20V 600MA DFN1006-3
BUK6D43-60EX
BUK6D43-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 5A DFN2020MD-6
74LVC16245ADGG,118
74LVC16245ADGG,118
Nexperia USA Inc.
IC TXRX NON-INVERT 3.6V 48TSSOP
74AUP1G04GM,132
74AUP1G04GM,132
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 6XSON
74LVC1G00GW-Q100H
74LVC1G00GW-Q100H
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
CBTD16210DGG,112
CBTD16210DGG,112
Nexperia USA Inc.
IC BUS SWITCH 10 X 1:1 48TSSOP