BAS21LLYL
  • Share:

Nexperia USA Inc. BAS21LLYL

Manufacturer No:
BAS21LLYL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE GP REV POL 200V 330MA 2DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS21LLYL is a high-voltage switching diode manufactured by Nexperia USA Inc. This component is encapsulated in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package. It is designed for high-voltage applications and offers a compact solution for various electronic designs. The BAS21LLYL is part of Nexperia’s extensive portfolio of diodes, which are used across multiple industries including automotive, industrial, power, computing, consumer, mobile, and wearables.

Key Specifications

Type number Package version Package name Size (mm) V R [max] (V) I FSM [max] (A) V F [max] (mV) I R [max] (nA) I FRM (mA) Configuration t rr [max] (ns) I F [max] (mA) C d [max] (pF) Automotive qualified
BAS21LL SOD882 DFN1006-2 1 x 0.6 x 0.48 200 9 1250@IF=200mA 100@VR=200V 900 single 50 330 2 Y

Key Features

  • High-voltage capability: The BAS21LLYL can handle a maximum reverse voltage (V R) of 200 V.
  • Low forward voltage drop: The diode has a maximum forward voltage drop (V F) of 1250 mV at 200 mA.
  • Fast switching time: It features a maximum reverse recovery time (t rr) of 50 ns.
  • Compact packaging: Encapsulated in a leadless ultra small DFN1006-2 (SOD882) SMD package, measuring 1 mm x 0.6 mm x 0.48 mm.
  • Automotive qualified: Suitable for automotive applications, ensuring reliability and robustness in demanding environments.
  • RoHS compliant: Meets the RoHS (Restriction of Hazardous Substances) standards, making it environmentally friendly.

Applications

The BAS21LLYL is versatile and can be used in a variety of applications across different industries, including:

  • Automotive: For high-voltage switching and protection in automotive systems.
  • Industrial: In industrial control systems, power supplies, and motor control circuits.
  • Power and Computing: For voltage regulation, overvoltage protection, and high-frequency switching in power supplies and computing hardware.
  • Consumer and Mobile: In consumer electronics and mobile devices for general-purpose switching and protection.
  • Wearables: Due to its compact size, it is also suitable for wearable technology applications.

Q & A

  1. What is the maximum reverse voltage (V R) of the BAS21LLYL?

    The maximum reverse voltage (V R) is 200 V.

  2. What is the maximum forward voltage drop (V F) of the BAS21LLYL?

    The maximum forward voltage drop (V F) is 1250 mV at 200 mA.

  3. What is the package type of the BAS21LLYL?

    The BAS21LLYL is encapsulated in a leadless ultra small DFN1006-2 (SOD882) SMD package.

  4. Is the BAS21LLYL automotive qualified?

    Yes, the BAS21LLYL is automotive qualified.

  5. What is the maximum reverse recovery time (t rr) of the BAS21LLYL?

    The maximum reverse recovery time (t rr) is 50 ns.

  6. Is the BAS21LLYL RoHS compliant?

    Yes, the BAS21LLYL is RoHS compliant.

  7. What are the dimensions of the BAS21LLYL package?

    The package dimensions are 1 mm x 0.6 mm x 0.48 mm.

  8. Where can I purchase the BAS21LLYL?

    The BAS21LLYL can be purchased from various distributors such as Arrow, Avnet, Digi-Key, Mouser Electronics, and more.

  9. What is the maximum forward current (I F) of the BAS21LLYL?

    The maximum forward current (I F) is 330 mA.

  10. What is the maximum leakage current (I R) of the BAS21LLYL?

    The maximum leakage current (I R) is 100 nA at VR = 200 V.

Product Attributes

Diode Type:Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):330mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:2-XDFN
Supplier Device Package:DFN1006D-2
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.26
1,727

Please send RFQ , we will respond immediately.

Similar Products

Part Number BAS21LLYL BAS21LSYL BAS21LDYL
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Obsolete Active
Diode Type Standard, Reverse Polarity Standard Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 200 V
Current - Average Rectified (Io) 330mA (DC) 250mA (DC) 330mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 200 V 100 nA @ 200 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 2-XDFN SOD-882 2-XDFN
Supplier Device Package DFN1006D-2 DFN1006BD-2 DFN1006D-2
Operating Temperature - Junction 150°C (Max) 150°C 150°C (Max)

Related Product By Categories

BAW56B5000
BAW56B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODES
BAS16L-G3-08
BAS16L-G3-08
Vishay General Semiconductor - Diodes Division
SWITCHING DIODE GENPURP DFN1006-
PMEG2010AEBF
PMEG2010AEBF
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD523
RB521S30T5G
RB521S30T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
SBAT54XV2T1G
SBAT54XV2T1G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
STTH5L06B-TR
STTH5L06B-TR
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
BAS16WS-HE3-18
BAS16WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
NRVBA210LNT3G
NRVBA210LNT3G
onsemi
DIODE SCHOTTKY 2A 10V SMA2
1N5711UR-1E3
1N5711UR-1E3
Microchip Technology
SCHOTTKY BARRIER DIODE MELF SURF
1N4148,133
1N4148,133
NXP USA Inc.
DIODE GEN PURP 100V 200MA ALF2
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA

Related Product By Brand

BAS316/DG/B3,135
BAS316/DG/B3,135
Nexperia USA Inc.
DIODE GEN PURP 100V 250MA TO236
BZX79-C5V6,133
BZX79-C5V6,133
Nexperia USA Inc.
DIODE ZENER 5.6V 400MW ALF2
PDZ33B,115
PDZ33B,115
Nexperia USA Inc.
DIODE ZENER 33V 400MW SOD323
BC856BS,115
BC856BS,115
Nexperia USA Inc.
TRANS 2PNP 65V 0.1A 6TSSOP
BC869,115
BC869,115
Nexperia USA Inc.
TRANS PNP 20V 1A SOT89
BCP52-16,115
BCP52-16,115
Nexperia USA Inc.
TRANS PNP 60V 1A SOT223
HEF4541BT,653
HEF4541BT,653
Nexperia USA Inc.
IC OSC PROG TIMER 36MHZ 14SOIC
74HC1G66GW-Q100H
74HC1G66GW-Q100H
Nexperia USA Inc.
IC ANLG SWITCH SPST 5TSSOP
74HCT1G00GW,165
74HCT1G00GW,165
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
HEF4047BT,652
HEF4047BT,652
Nexperia USA Inc.
IC MULTIVIBRATOR 50NS 14SO
74HCT221D,112
74HCT221D,112
Nexperia USA Inc.
IC MULTIVIBRATOR 31NS 16SO
74LVC138APW,112
74LVC138APW,112
Nexperia USA Inc.
IC DECODER/DEMUX 1X3:8 16TSSOP