Overview
The BAS16VV,115 is a high-speed switching diode produced by Nexperia USA Inc. This component is encapsulated in a very small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. It is designed for high-speed switching applications, offering low capacitance, low leakage current, and high switching speed. The diode is suitable for various electronic designs, particularly in automotive, industrial, and consumer electronics.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Type Number | - | - | - | BAS16VV | - |
| Package | - | - | - | SOT666 | - |
| Diode Configuration | - | - | - | Triple isolated | - |
| Voltage - DC Reverse (Vr) | - | - | - | 100 V | - |
| Voltage - Forward (Vf) @ If | IF = 150 mA | - | - | 1.25 V | - |
| Current - Average Rectified (Io) per Diode | - | - | - | 200 mA (DC) | - |
| Reverse Recovery Time (trr) | - | - | - | 4 ns | - |
| Current - Reverse Leakage @ Vr | VR = 80 V | - | - | 500 nA | - |
| Operating Temperature - Junction | - | - | - | 150°C (Max) | - |
| Mounting Type | - | - | - | Surface Mount | - |
Key Features
- High switching speed: reverse recovery time (trr) ≤ 4 ns
- Low capacitance: diode capacitance ≤ 1.5 pF at VR = 0 V and f = 1 MHz
- Low leakage current: reverse current ≤ 500 nA at VR = 80 V
- Very small SMD plastic packages: SOT666
- High-speed switching and general-purpose switching capabilities
- Voltage clamping and reverse polarity protection
Applications
The BAS16VV,115 is versatile and can be used in a variety of applications, including:
- Automotive electronics: for high-speed switching and voltage clamping
- Industrial electronics: for general-purpose switching and reverse polarity protection
- Consumer electronics: in mobile, computing, and wearables for efficient and reliable switching
- Power management: in power supplies and voltage regulators
Q & A
- What is the maximum reverse voltage of the BAS16VV,115?
The maximum reverse voltage (Vr) is 100 V. - What is the maximum forward current per diode for the BAS16VV,115?
The maximum average rectified current (Io) per diode is 200 mA (DC). - What is the reverse recovery time of the BAS16VV,115?
The reverse recovery time (trr) is ≤ 4 ns. - What is the package type of the BAS16VV,115?
The package type is SOT666. - What is the operating junction temperature of the BAS16VV,115?
The operating junction temperature is up to 150°C. - Is the BAS16VV,115 RoHS compliant?
Yes, the BAS16VV,115 is RoHS compliant. - What are the typical applications of the BAS16VV,115?
Typical applications include automotive, industrial, and consumer electronics for high-speed switching and voltage clamping. - What is the diode configuration of the BAS16VV,115?
The diode configuration is triple isolated. - What is the maximum forward voltage drop at 150 mA for the BAS16VV,115?
The maximum forward voltage drop at 150 mA is 1.25 V. - How much is the reverse leakage current at 80 V for the BAS16VV,115?
The reverse leakage current at 80 V is 500 nA.
