BAS16QAZ
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Nexperia USA Inc. BAS16QAZ

Manufacturer No:
BAS16QAZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE GP 100V 290MA DFN1010D-3
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The BAS16QAZ is a high-speed switching diode produced by Nexperia USA Inc. This component is designed for high-performance applications requiring fast switching times and low forward voltage drop. The BAS16QAZ is part of Nexperia’s extensive portfolio of diodes, which are used in a wide range of electronic designs across various industries, including automotive, industrial, power, computing, consumer, mobile, and wearables.

Key Specifications

Type number Orderable part number Package VR [max] (V) IFSM [max] (A) VF [max] (mV) IR [max] (nA) IFRM (mA) Configuration trr [max] (ns) IF [max] (mA) Cd [max] (pF) Automotive qualified
BAS16QA BAS16QAZ DFN1010D-3 (SOT1215) 100 4 1000 @ IF = 50 mA 500 @ VR = 80 V 700 Single 4 290 1.5 No

Key Features

  • High-speed switching capability with a reverse recovery time (trr) of 4 ns.
  • Low forward voltage drop (VF) of 1000 mV at IF = 50 mA.
  • High repetitive reverse voltage (VR) of 100 V.
  • High forward surge current (IFSM) of 4 A.
  • Compact DFN1010D-3 (SOT1215) package with dimensions of 1.1 mm x 1 mm x 0.37 mm.
  • Leadless thermal enhanced ultra thin small outline package with side-wettable flanks (SWF).

Applications

The BAS16QAZ is suitable for a variety of applications across different industries, including:

  • Automotive systems: For high-speed switching and rectification in automotive electronics.
  • Industrial systems: In power supplies, motor control, and other high-speed switching applications.
  • Consumer electronics: In mobile devices, wearables, and other consumer electronics requiring fast switching diodes.
  • Power and computing: For high-efficiency power management and computing systems.

Q & A

  1. What is the maximum repetitive reverse voltage (VR) of the BAS16QAZ?

    The maximum repetitive reverse voltage (VR) is 100 V.

  2. What is the reverse recovery time (trr) of the BAS16QAZ?

    The reverse recovery time (trr) is 4 ns.

  3. What is the maximum forward surge current (IFSM) of the BAS16QAZ?

    The maximum forward surge current (IFSM) is 4 A.

  4. What package type does the BAS16QAZ use?

    The BAS16QAZ uses a DFN1010D-3 (SOT1215) package.

  5. Is the BAS16QAZ automotive qualified?

    No, the BAS16QAZ is not automotive qualified.

  6. What are the dimensions of the BAS16QAZ package?

    The dimensions are 1.1 mm x 1 mm x 0.37 mm.

  7. What is the maximum forward voltage drop (VF) of the BAS16QAZ?

    The maximum forward voltage drop (VF) is 1000 mV at IF = 50 mA.

  8. What is the maximum leakage current (IR) of the BAS16QAZ?

    The maximum leakage current (IR) is 500 nA at VR = 80 V.

  9. What is the typical application of the BAS16QAZ in consumer electronics?

    The BAS16QAZ is typically used in high-speed switching and rectification applications in consumer electronics such as mobile devices and wearables.

  10. How can I order samples of the BAS16QAZ?

    Samples can be ordered via Nexperia’s sales organization or through their network of global and regional distributors.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):290mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:500 nA @ 80 V
Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1010D-3
Operating Temperature - Junction:150°C (Max)
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Similar Products

Part Number BAS16QAZ BAS116QAZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 75 V
Current - Average Rectified (Io) 290mA (DC) 300mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns 3 µs
Current - Reverse Leakage @ Vr 500 nA @ 80 V 5 nA @ 75 V
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1010D-3 DFN1010D-3
Operating Temperature - Junction 150°C (Max) -55°C ~ 150°C

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