NAND512R3A2SZA6E
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Micron Technology Inc. NAND512R3A2SZA6E

Manufacturer No:
NAND512R3A2SZA6E
Manufacturer:
Micron Technology Inc.
Package:
Tray
Description:
IC FLSH 512MBIT PARALLEL 63VFBGA
Delivery:
Payment:
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Product Introduction

Overview

The NAND512R3A2SZA6E is a Single-Level Cell (SLC) NAND Flash memory device manufactured by Micron Technology Inc. This component is designed for high-density data storage applications, offering reliable and high-performance storage solutions. The device is housed in a 153-ball Fine-Pitch Ball Grid Array (FBGA) package, making it suitable for compact and space-efficient designs.

Key Specifications

ParameterValue
Memory TypeNAND Flash
Capacity512 Mbit (64M x 8)
Operating Voltage1.8V
Package153-LFBGA
Random Access Time35ns
InterfaceHigh-speed Parallel Interface

Key Features

  • High-density 512 Mbit (64M x 8) storage capacity
  • Single-Level Cell (SLC) NAND technology for high reliability and performance
  • 1.8V operating voltage
  • High-speed parallel interface for fast data transfer rates
  • Compact 153-LFBGA package for reduced PCB footprint requirements

Applications

  • Industrial control systems
  • Automotive electronics
  • Medical devices
  • Aerospace and defense systems
  • Data centers and cloud storage solutions

Q & A

  • Q: What is the storage capacity of the NAND512R3A2SZA6E?
    A: The storage capacity is 512 Mbit (64M x 8).
  • Q: What is the operating voltage of the NAND512R3A2SZA6E?
    A: The operating voltage is 1.8V.
  • Q: What type of package does the NAND512R3A2SZA6E use?
    A: It uses a 153-LFBGA package.
  • Q: What is the random access time of the NAND512R3A2SZA6E?
    A: The random access time is 35ns.
  • Q: Is the NAND512R3A2SZA6E suitable for high-reliability applications?
    A: Yes, it is designed for high-reliability applications and meets various industry standards.
  • Q: What types of interfaces does the NAND512R3A2SZA6E support?
    A: It supports a high-speed parallel interface.
  • Q: Can the NAND512R3A2SZA6E be used in industrial settings?
    A: Yes, it is suitable for industrial settings with high temperatures and humidity.
  • Q: What are the typical applications of the NAND512R3A2SZA6E?
    A: Typical applications include industrial control systems, automotive electronics, medical devices, aerospace and defense systems, and data centers.
  • Q: How does the NAND512R3A2SZA6E store data?
    A: It stores data in a non-volatile memory array using NAND flash technology.
  • Q: Are there any equivalents or alternatives to the NAND512R3A2SZA6E?
    A: Yes, alternatives include other NAND Flash memory chips from Micron Technology and other manufacturers with similar specifications.

Product Attributes

Memory Type:Non-Volatile
Memory Format:Flash
Technology:FLASH - NAND
Memory Size:512Mb (64M x 8)
Memory Interface:Parallel
Clock Frequency:- 
Write Cycle Time - Word, Page:50ns
Access Time:50 ns
Voltage - Supply:1.7V ~ 1.95V
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:63-TFBGA
Supplier Device Package:63-VFBGA (9x11)
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