NAND512R3A2SZA6E
  • Share:

Micron Technology Inc. NAND512R3A2SZA6E

Manufacturer No:
NAND512R3A2SZA6E
Manufacturer:
Micron Technology Inc.
Package:
Tray
Description:
IC FLSH 512MBIT PARALLEL 63VFBGA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NAND512R3A2SZA6E is a Single-Level Cell (SLC) NAND Flash memory device manufactured by Micron Technology Inc. This component is designed for high-density data storage applications, offering reliable and high-performance storage solutions. The device is housed in a 153-ball Fine-Pitch Ball Grid Array (FBGA) package, making it suitable for compact and space-efficient designs.

Key Specifications

ParameterValue
Memory TypeNAND Flash
Capacity512 Mbit (64M x 8)
Operating Voltage1.8V
Package153-LFBGA
Random Access Time35ns
InterfaceHigh-speed Parallel Interface

Key Features

  • High-density 512 Mbit (64M x 8) storage capacity
  • Single-Level Cell (SLC) NAND technology for high reliability and performance
  • 1.8V operating voltage
  • High-speed parallel interface for fast data transfer rates
  • Compact 153-LFBGA package for reduced PCB footprint requirements

Applications

  • Industrial control systems
  • Automotive electronics
  • Medical devices
  • Aerospace and defense systems
  • Data centers and cloud storage solutions

Q & A

  • Q: What is the storage capacity of the NAND512R3A2SZA6E?
    A: The storage capacity is 512 Mbit (64M x 8).
  • Q: What is the operating voltage of the NAND512R3A2SZA6E?
    A: The operating voltage is 1.8V.
  • Q: What type of package does the NAND512R3A2SZA6E use?
    A: It uses a 153-LFBGA package.
  • Q: What is the random access time of the NAND512R3A2SZA6E?
    A: The random access time is 35ns.
  • Q: Is the NAND512R3A2SZA6E suitable for high-reliability applications?
    A: Yes, it is designed for high-reliability applications and meets various industry standards.
  • Q: What types of interfaces does the NAND512R3A2SZA6E support?
    A: It supports a high-speed parallel interface.
  • Q: Can the NAND512R3A2SZA6E be used in industrial settings?
    A: Yes, it is suitable for industrial settings with high temperatures and humidity.
  • Q: What are the typical applications of the NAND512R3A2SZA6E?
    A: Typical applications include industrial control systems, automotive electronics, medical devices, aerospace and defense systems, and data centers.
  • Q: How does the NAND512R3A2SZA6E store data?
    A: It stores data in a non-volatile memory array using NAND flash technology.
  • Q: Are there any equivalents or alternatives to the NAND512R3A2SZA6E?
    A: Yes, alternatives include other NAND Flash memory chips from Micron Technology and other manufacturers with similar specifications.

Product Attributes

Memory Type:Non-Volatile
Memory Format:Flash
Technology:FLASH - NAND
Memory Size:512Mb (64M x 8)
Memory Interface:Parallel
Clock Frequency:- 
Write Cycle Time - Word, Page:50ns
Access Time:50 ns
Voltage - Supply:1.7V ~ 1.95V
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:63-TFBGA
Supplier Device Package:63-VFBGA (9x11)
0 Remaining View Similar

In Stock

-
456

Please send RFQ , we will respond immediately.

Same Series
NAND512R3A2SZAXE
NAND512R3A2SZAXE
IC FLSH 512MBIT PARALLEL 63VFBGA
NAND512W3A2SNXE
NAND512W3A2SNXE
IC FLASH 512MBIT PARALLEL 48TSOP
NAND512W3A2SZAXE
NAND512W3A2SZAXE
IC FLSH 512MBIT PARALLEL 63VFBGA
NAND512W3A2SN6F TR
NAND512W3A2SN6F TR
IC FLASH 512MBIT PARALLEL 48TSOP
NAND512W3A2SZA6F TR
NAND512W3A2SZA6F TR
IC FLSH 512MBIT PARALLEL 63VFBGA
NAND512R3A2SZA6E
NAND512R3A2SZA6E
IC FLSH 512MBIT PARALLEL 63VFBGA
NAND512W3A2SZA6E
NAND512W3A2SZA6E
IC FLSH 512MBIT PARALLEL 63VFBGA
NAND512R3A2SN6E
NAND512R3A2SN6E
IC FLASH 512MBIT PAR 48TSOP I
NAND512R3A2SN6F
NAND512R3A2SN6F
IC FLASH 512MBIT PAR 48TSOP I
NAND512R3A2SZA6F
NAND512R3A2SZA6F
IC FLSH 512MBIT PARALLEL 63VFBGA

Related Product By Categories

W971GG6NB-25 TR
W971GG6NB-25 TR
Winbond Electronics
IC DRAM 1GBIT PARALLEL 84WBGA
M24128X-FCU6T/TF
M24128X-FCU6T/TF
STMicroelectronics
IC EEPROM 128KBIT I2C 4WLCSP
M95128-DRMN3TP/K
M95128-DRMN3TP/K
STMicroelectronics
IC EEPROM 128KBIT SPI 20MHZ 8SO
MT25QL02GCBB8E12-0SIT TR
MT25QL02GCBB8E12-0SIT TR
Micron Technology Inc.
IC FLSH 2GBIT SPI 133MHZ 24TPBGA
M27C1001-10F1
M27C1001-10F1
STMicroelectronics
IC EPROM 1MBIT PARALLEL 32CDIP
M24C04-WBN6P
M24C04-WBN6P
STMicroelectronics
IC EEPROM 4KBIT I2C 400KHZ 8DIP
M27C4002-90C1
M27C4002-90C1
STMicroelectronics
IC EPROM 4MBIT PARALLEL 44PLCC
M29W800DB70ZE6F TR
M29W800DB70ZE6F TR
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 48TFBGA
M93C46-MN6P
M93C46-MN6P
STMicroelectronics
IC EEPROM 1KBIT SPI 2MHZ 8SO
M25P80-VMN6TPBA TR
M25P80-VMN6TPBA TR
Micron Technology Inc.
IC FLASH 8MBIT SPI 75MHZ 8SO
M25P40-VMN6YPB
M25P40-VMN6YPB
Micron Technology Inc.
IC FLASH 4MBIT SPI 75MHZ 8SO
MT41K256M16HA-125 XIT:E TR
MT41K256M16HA-125 XIT:E TR
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA

Related Product By Brand

MTFC32GAPALBH-IT
MTFC32GAPALBH-IT
Micron Technology Inc.
IC FLASH 256GBIT MMC 153TFBGA
MT25QL128ABA8ESF-0AAT
MT25QL128ABA8ESF-0AAT
Micron Technology Inc.
IC FLASH 128MBIT SPI 16SOP2
M29F010B45K6E
M29F010B45K6E
Micron Technology Inc.
IC FLASH 1MBIT PARALLEL 32PLCC
M29F010B70N6E
M29F010B70N6E
Micron Technology Inc.
IC FLASH 1MBIT PARALLEL 32TSOP
M29W800DB70ZE6F TR
M29W800DB70ZE6F TR
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 48TFBGA
M45PE80-VMP6G
M45PE80-VMP6G
Micron Technology Inc.
IC FLASH 8MBIT SPI 75MHZ 8VDFPN
M25PE20-VMN6P
M25PE20-VMN6P
Micron Technology Inc.
IC FLASH 2MBIT SPI 75MHZ 8SO
M29DW323DT70N6E
M29DW323DT70N6E
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 48TSOP
M25P16-VMC6TG TR
M25P16-VMC6TG TR
Micron Technology Inc.
IC FLSH 16MBIT SPI 75MHZ 8UFDFPN
MT47H32M16HR-25E:G
MT47H32M16HR-25E:G
Micron Technology Inc.
IC DRAM 512MBIT PARALLEL 84FBGA
M25P20-VMN6PBA
M25P20-VMN6PBA
Micron Technology Inc.
IC FLASH 2MBIT SPI 75MHZ 8SO
M25P16-V6D11
M25P16-V6D11
Micron Technology Inc.
IC FLASH 16MBIT SPI 75MHZ