NAND512R3A2SZA6E
  • Share:

Micron Technology Inc. NAND512R3A2SZA6E

Manufacturer No:
NAND512R3A2SZA6E
Manufacturer:
Micron Technology Inc.
Package:
Tray
Description:
IC FLSH 512MBIT PARALLEL 63VFBGA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NAND512R3A2SZA6E is a Single-Level Cell (SLC) NAND Flash memory device manufactured by Micron Technology Inc. This component is designed for high-density data storage applications, offering reliable and high-performance storage solutions. The device is housed in a 153-ball Fine-Pitch Ball Grid Array (FBGA) package, making it suitable for compact and space-efficient designs.

Key Specifications

ParameterValue
Memory TypeNAND Flash
Capacity512 Mbit (64M x 8)
Operating Voltage1.8V
Package153-LFBGA
Random Access Time35ns
InterfaceHigh-speed Parallel Interface

Key Features

  • High-density 512 Mbit (64M x 8) storage capacity
  • Single-Level Cell (SLC) NAND technology for high reliability and performance
  • 1.8V operating voltage
  • High-speed parallel interface for fast data transfer rates
  • Compact 153-LFBGA package for reduced PCB footprint requirements

Applications

  • Industrial control systems
  • Automotive electronics
  • Medical devices
  • Aerospace and defense systems
  • Data centers and cloud storage solutions

Q & A

  • Q: What is the storage capacity of the NAND512R3A2SZA6E?
    A: The storage capacity is 512 Mbit (64M x 8).
  • Q: What is the operating voltage of the NAND512R3A2SZA6E?
    A: The operating voltage is 1.8V.
  • Q: What type of package does the NAND512R3A2SZA6E use?
    A: It uses a 153-LFBGA package.
  • Q: What is the random access time of the NAND512R3A2SZA6E?
    A: The random access time is 35ns.
  • Q: Is the NAND512R3A2SZA6E suitable for high-reliability applications?
    A: Yes, it is designed for high-reliability applications and meets various industry standards.
  • Q: What types of interfaces does the NAND512R3A2SZA6E support?
    A: It supports a high-speed parallel interface.
  • Q: Can the NAND512R3A2SZA6E be used in industrial settings?
    A: Yes, it is suitable for industrial settings with high temperatures and humidity.
  • Q: What are the typical applications of the NAND512R3A2SZA6E?
    A: Typical applications include industrial control systems, automotive electronics, medical devices, aerospace and defense systems, and data centers.
  • Q: How does the NAND512R3A2SZA6E store data?
    A: It stores data in a non-volatile memory array using NAND flash technology.
  • Q: Are there any equivalents or alternatives to the NAND512R3A2SZA6E?
    A: Yes, alternatives include other NAND Flash memory chips from Micron Technology and other manufacturers with similar specifications.

Product Attributes

Memory Type:Non-Volatile
Memory Format:Flash
Technology:FLASH - NAND
Memory Size:512Mb (64M x 8)
Memory Interface:Parallel
Clock Frequency:- 
Write Cycle Time - Word, Page:50ns
Access Time:50 ns
Voltage - Supply:1.7V ~ 1.95V
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:63-TFBGA
Supplier Device Package:63-VFBGA (9x11)
0 Remaining View Similar

In Stock

-
456

Please send RFQ , we will respond immediately.

Same Series
NAND512R3A2SZAXE
NAND512R3A2SZAXE
IC FLSH 512MBIT PARALLEL 63VFBGA
NAND512W3A2SNXE
NAND512W3A2SNXE
IC FLASH 512MBIT PARALLEL 48TSOP
NAND512W3A2SZAXE
NAND512W3A2SZAXE
IC FLSH 512MBIT PARALLEL 63VFBGA
NAND512W3A2SN6F TR
NAND512W3A2SN6F TR
IC FLASH 512MBIT PARALLEL 48TSOP
NAND512W3A2SZA6F TR
NAND512W3A2SZA6F TR
IC FLSH 512MBIT PARALLEL 63VFBGA
NAND512R3A2SZA6E
NAND512R3A2SZA6E
IC FLSH 512MBIT PARALLEL 63VFBGA
NAND512W3A2SZA6E
NAND512W3A2SZA6E
IC FLSH 512MBIT PARALLEL 63VFBGA
NAND512R3A2SN6E
NAND512R3A2SN6E
IC FLASH 512MBIT PAR 48TSOP I
NAND512R3A2SN6F
NAND512R3A2SN6F
IC FLASH 512MBIT PAR 48TSOP I
NAND512R3A2SZA6F
NAND512R3A2SZA6F
IC FLSH 512MBIT PARALLEL 63VFBGA

Related Product By Categories

W971GG6NB-25 TR
W971GG6NB-25 TR
Winbond Electronics
IC DRAM 1GBIT PARALLEL 84WBGA
M95512-WDW6TP
M95512-WDW6TP
STMicroelectronics
IC EEPROM 512KBIT SPI 8TSSOP
W971GG6NB-25
W971GG6NB-25
Winbond Electronics
IC DRAM 1GBIT PARALLEL 84WBGA
CAT24C16YI-GT3
CAT24C16YI-GT3
onsemi
IC EEPROM 16KBIT I2C 8TSSOP
M24C32-DRMF3TG/K
M24C32-DRMF3TG/K
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8MLP
M95256-DRMF3TG/K
M95256-DRMF3TG/K
STMicroelectronics
IC EEPROM 256KBIT SPI 20MHZ 8MLP
MX25L3233FM1I-08G
MX25L3233FM1I-08G
Macronix
IC FLASH 32MBIT SPI/QUAD 8SOP
MT40A1G8SA-075:E TR
MT40A1G8SA-075:E TR
Micron Technology Inc.
IC DRAM 8GBIT PARALLEL 78FBGA
MT40A512M16LY-062E AAT:E
MT40A512M16LY-062E AAT:E
Micron Technology Inc.
IC DRAM 8GBIT PARALLEL 96FBGA
M93C46-WMN6T
M93C46-WMN6T
STMicroelectronics
IC EEPROM 1KBIT SPI 2MHZ 8SO
M24512-WMW6TG
M24512-WMW6TG
STMicroelectronics
IC EEPROM 512KBIT I2C 1MHZ 8SO
M25P80-VMN6TPBA TR
M25P80-VMN6TPBA TR
Micron Technology Inc.
IC FLASH 8MBIT SPI 75MHZ 8SO

Related Product By Brand

MT25QU128ABA1EW7-0SIT
MT25QU128ABA1EW7-0SIT
Micron Technology Inc.
IC FLASH 128MBIT SPI 8WPDFN
MT47H64M16NF-25E IT:M TR
MT47H64M16NF-25E IT:M TR
Micron Technology Inc.
IC DRAM 1GBIT PARALLEL 84FBGA
MT41K512M8DA-107:P TR
MT41K512M8DA-107:P TR
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 78FBGA
MT41J128M16JT-125:K TR
MT41J128M16JT-125:K TR
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
MT25QU256ABA1EW7-0SIT
MT25QU256ABA1EW7-0SIT
Micron Technology Inc.
IC FLASH 256MBIT SPI 8WPDFN
MT25QU256ABA8ESF-0SIT
MT25QU256ABA8ESF-0SIT
Micron Technology Inc.
IC FLASH 256MBIT SPI 133MHZ 16SO
M29F400BB70N6E
M29F400BB70N6E
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 48TSOP
M50FW080N5G
M50FW080N5G
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 40TSOP
M28W320FCB70ZB6E
M28W320FCB70ZB6E
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 47TFBGA
M25P80-VMN6PBA
M25P80-VMN6PBA
Micron Technology Inc.
IC FLASH 8MBIT SPI 75MHZ 8SO
M25P32-VMW3TGB TR
M25P32-VMW3TGB TR
Micron Technology Inc.
IC FLASH 32MBIT SPI 75MHZ 8SO
MT40A512M16LY-062E IT:E TR
MT40A512M16LY-062E IT:E TR
Micron Technology Inc.
IC DRAM 8GBIT PARALLEL 96FBGA