MT47H128M16RT-25E XIT:C TR
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Micron Technology Inc. MT47H128M16RT-25E XIT:C TR

Manufacturer No:
MT47H128M16RT-25E XIT:C TR
Manufacturer:
Micron Technology Inc.
Package:
Tape & Reel (TR)
Description:
IC DRAM 2GBIT PARALLEL 84FBGA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MT47H128M16RT-25E XIT:C TR is a high-performance DDR2 SDRAM module manufactured by Micron Technology Inc. This component is designed to meet the demands of various applications, including mobile devices, industrial equipment, and consumer electronics. It operates within an industrial and automotive temperature range, making it suitable for use in harsh environments.

Key Specifications

ParameterValue
Manufacturer Part NumberMT47H128M16RT-25E XIT:C TR
ManufacturerMicron Technology Inc.
Memory TypeDRAM
Memory Size2 Gbit (128M x 16)
Package / Case84-Ball FBGA (9x12.5 mm)
Voltage - Supply1.7 V ~ 1.9 V
Speed400 MHz
Operating Temperature-40°C ~ 95°C (TC)
InterfaceParallel
Internal Banks8
Programmable CAS Latency (CL)Yes
Programmable Burst Lengths (BL)4 or 8
On-die Termination (ODT)Yes
RoHS-compliantYes
AEC-Q100Yes

Key Features

  • Industrial and automotive temperature compliance, operating between -40°C to 95°C.
  • JEDEC-standard 1.8V I/O (SSTL_18-compatible) with differential data strobe (DQS, DQS#) option.
  • 4n-bit prefetch architecture and duplicate output strobe (RDQS) option for x8 configurations.
  • Delay-Locked Loop (DLL) to align DQ and DQS transitions with CK.
  • 8 internal banks for concurrent operation and programmable CAS latency (CL) and posted CAS additive latency (AL).
  • Programmable burst lengths (BL): 4 or 8 and adjustable data-output drive strength.
  • 32ms, 8192-cycle refresh and on-die termination (ODT).
  • Supports JEDEC clock jitter specification and is RoHS-compliant.
  • AEC-Q100 qualified and PPAP submission available.

Applications

The MT47H128M16RT-25E XIT:C TR is versatile and can be used in a wide range of applications, including:

  • Mobile devices requiring high-performance and low power consumption.
  • Industrial equipment that operates in harsh temperature environments.
  • Consumer electronics that demand fast data transfer rates and reliable memory performance.
  • Automotive systems where reliability and temperature stability are critical.

Q & A

  1. What is the memory size of the MT47H128M16RT-25E XIT:C TR?
    The memory size is 2 Gbit, organized as 128M x 16.
  2. What is the operating temperature range of this component?
    The operating temperature range is -40°C to 95°C.
  3. What type of package does this component use?
    The component uses an 84-Ball FBGA package.
  4. Is the MT47H128M16RT-25E XIT:C TR RoHS-compliant?
    Yes, it is RoHS-compliant.
  5. What is the maximum clock frequency of this SDRAM?
    The maximum clock frequency is 400 MHz.
  6. Does this component support programmable CAS latency?
    Yes, it supports programmable CAS latency (CL).
  7. What is the refresh cycle for this SDRAM?
    The refresh cycle is 32ms, 8192-cycle.
  8. Is the MT47H128M16RT-25E XIT:C TR suitable for automotive applications?
    Yes, it is AEC-Q100 qualified and suitable for automotive applications.
  9. Does this component have on-die termination (ODT)?
    Yes, it has on-die termination (ODT).
  10. What is the voltage supply range for this component?
    The voltage supply range is 1.7 V ~ 1.9 V.

Product Attributes

Memory Type:Volatile
Memory Format:DRAM
Technology:SDRAM - DDR2
Memory Size:2Gb (128M x 16)
Memory Interface:Parallel
Clock Frequency:400 MHz
Write Cycle Time - Word, Page:15ns
Access Time:400 ps
Voltage - Supply:1.7V ~ 1.9V
Operating Temperature:-40°C ~ 95°C (TC)
Mounting Type:Surface Mount
Package / Case:84-TFBGA
Supplier Device Package:84-FBGA (9x12.5)
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Similar Products

Part Number MT47H128M16RT-25E XIT:C TR MT47H128M16RT-25E AIT:C TR MT47H128M16RT-25E IT:C TR
Manufacturer Micron Technology Inc. Micron Technology Inc. Micron Technology Inc.
Product Status Active Active Active
Memory Type Volatile Volatile Volatile
Memory Format DRAM DRAM DRAM
Technology SDRAM - DDR2 SDRAM - DDR2 SDRAM - DDR2
Memory Size 2Gb (128M x 16) 2Gb (128M x 16) 2Gb (128M x 16)
Memory Interface Parallel Parallel Parallel
Clock Frequency 400 MHz 400 MHz 400 MHz
Write Cycle Time - Word, Page 15ns 15ns 15ns
Access Time 400 ps 400 ps 400 ps
Voltage - Supply 1.7V ~ 1.9V 1.7V ~ 1.9V 1.7V ~ 1.9V
Operating Temperature -40°C ~ 95°C (TC) -40°C ~ 95°C (TC) -40°C ~ 95°C (TC)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 84-TFBGA 84-TFBGA 84-TFBGA
Supplier Device Package 84-FBGA (9x12.5) 84-FBGA (9x12.5) 84-FBGA (9x12.5)

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