MT47H128M16RT-25E XIT:C TR
  • Share:

Micron Technology Inc. MT47H128M16RT-25E XIT:C TR

Manufacturer No:
MT47H128M16RT-25E XIT:C TR
Manufacturer:
Micron Technology Inc.
Package:
Tape & Reel (TR)
Description:
IC DRAM 2GBIT PARALLEL 84FBGA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MT47H128M16RT-25E XIT:C TR is a high-performance DDR2 SDRAM module manufactured by Micron Technology Inc. This component is designed to meet the demands of various applications, including mobile devices, industrial equipment, and consumer electronics. It operates within an industrial and automotive temperature range, making it suitable for use in harsh environments.

Key Specifications

ParameterValue
Manufacturer Part NumberMT47H128M16RT-25E XIT:C TR
ManufacturerMicron Technology Inc.
Memory TypeDRAM
Memory Size2 Gbit (128M x 16)
Package / Case84-Ball FBGA (9x12.5 mm)
Voltage - Supply1.7 V ~ 1.9 V
Speed400 MHz
Operating Temperature-40°C ~ 95°C (TC)
InterfaceParallel
Internal Banks8
Programmable CAS Latency (CL)Yes
Programmable Burst Lengths (BL)4 or 8
On-die Termination (ODT)Yes
RoHS-compliantYes
AEC-Q100Yes

Key Features

  • Industrial and automotive temperature compliance, operating between -40°C to 95°C.
  • JEDEC-standard 1.8V I/O (SSTL_18-compatible) with differential data strobe (DQS, DQS#) option.
  • 4n-bit prefetch architecture and duplicate output strobe (RDQS) option for x8 configurations.
  • Delay-Locked Loop (DLL) to align DQ and DQS transitions with CK.
  • 8 internal banks for concurrent operation and programmable CAS latency (CL) and posted CAS additive latency (AL).
  • Programmable burst lengths (BL): 4 or 8 and adjustable data-output drive strength.
  • 32ms, 8192-cycle refresh and on-die termination (ODT).
  • Supports JEDEC clock jitter specification and is RoHS-compliant.
  • AEC-Q100 qualified and PPAP submission available.

Applications

The MT47H128M16RT-25E XIT:C TR is versatile and can be used in a wide range of applications, including:

  • Mobile devices requiring high-performance and low power consumption.
  • Industrial equipment that operates in harsh temperature environments.
  • Consumer electronics that demand fast data transfer rates and reliable memory performance.
  • Automotive systems where reliability and temperature stability are critical.

Q & A

  1. What is the memory size of the MT47H128M16RT-25E XIT:C TR?
    The memory size is 2 Gbit, organized as 128M x 16.
  2. What is the operating temperature range of this component?
    The operating temperature range is -40°C to 95°C.
  3. What type of package does this component use?
    The component uses an 84-Ball FBGA package.
  4. Is the MT47H128M16RT-25E XIT:C TR RoHS-compliant?
    Yes, it is RoHS-compliant.
  5. What is the maximum clock frequency of this SDRAM?
    The maximum clock frequency is 400 MHz.
  6. Does this component support programmable CAS latency?
    Yes, it supports programmable CAS latency (CL).
  7. What is the refresh cycle for this SDRAM?
    The refresh cycle is 32ms, 8192-cycle.
  8. Is the MT47H128M16RT-25E XIT:C TR suitable for automotive applications?
    Yes, it is AEC-Q100 qualified and suitable for automotive applications.
  9. Does this component have on-die termination (ODT)?
    Yes, it has on-die termination (ODT).
  10. What is the voltage supply range for this component?
    The voltage supply range is 1.7 V ~ 1.9 V.

Product Attributes

Memory Type:Volatile
Memory Format:DRAM
Technology:SDRAM - DDR2
Memory Size:2Gb (128M x 16)
Memory Interface:Parallel
Clock Frequency:400 MHz
Write Cycle Time - Word, Page:15ns
Access Time:400 ps
Voltage - Supply:1.7V ~ 1.9V
Operating Temperature:-40°C ~ 95°C (TC)
Mounting Type:Surface Mount
Package / Case:84-TFBGA
Supplier Device Package:84-FBGA (9x12.5)
0 Remaining View Similar

In Stock

$19.01
22

Please send RFQ , we will respond immediately.

Same Series
MT47H128M16RT-25E:C TR
MT47H128M16RT-25E:C TR
IC DRAM 2GBIT PARALLEL 84FBGA
MT47H128M16RT-25E AIT:C TR
MT47H128M16RT-25E AIT:C TR
IC DRAM 2GBIT PARALLEL 84FBGA
MT47H128M16RT-25E XIT:C TR
MT47H128M16RT-25E XIT:C TR
IC DRAM 2GBIT PARALLEL 84FBGA
MT47H128M16RT-25E AIT:C
MT47H128M16RT-25E AIT:C
IC DRAM 2GBIT PARALLEL 84FBGA
MT47H128M16RT-3:C
MT47H128M16RT-3:C
IC DRAM 2GBIT PARALLEL 84FBGA
MT47H512M4EB-25E:C
MT47H512M4EB-25E:C
IC DRAM 2GBIT PARALLEL 60FBGA
MT47H512M4EB-187E:C
MT47H512M4EB-187E:C
IC DRAM 2GBIT PARALLEL 60FBGA
MT47H512M4EB-3:C
MT47H512M4EB-3:C
IC DRAM 2GBIT PARALLEL 60FBGA
MT47H128M16RT-25E AAT:C
MT47H128M16RT-25E AAT:C
IC DRAM 2GBIT PARALLEL 84FBGA
MT47H256M8EB-25E XIT:C
MT47H256M8EB-25E XIT:C
IC DRAM 2GBIT PARALLEL 60FBGA
MT47H256M8EB-3:C TR
MT47H256M8EB-3:C TR
IC DRAM 2GBIT PARALLEL 60FBGA
MT47H256M8EB-3:C
MT47H256M8EB-3:C
IC DRAM 2GBIT PARALLEL 60FBGA

Similar Products

Part Number MT47H128M16RT-25E XIT:C TR MT47H128M16RT-25E AIT:C TR MT47H128M16RT-25E IT:C TR
Manufacturer Micron Technology Inc. Micron Technology Inc. Micron Technology Inc.
Product Status Active Active Active
Memory Type Volatile Volatile Volatile
Memory Format DRAM DRAM DRAM
Technology SDRAM - DDR2 SDRAM - DDR2 SDRAM - DDR2
Memory Size 2Gb (128M x 16) 2Gb (128M x 16) 2Gb (128M x 16)
Memory Interface Parallel Parallel Parallel
Clock Frequency 400 MHz 400 MHz 400 MHz
Write Cycle Time - Word, Page 15ns 15ns 15ns
Access Time 400 ps 400 ps 400 ps
Voltage - Supply 1.7V ~ 1.9V 1.7V ~ 1.9V 1.7V ~ 1.9V
Operating Temperature -40°C ~ 95°C (TC) -40°C ~ 95°C (TC) -40°C ~ 95°C (TC)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 84-TFBGA 84-TFBGA 84-TFBGA
Supplier Device Package 84-FBGA (9x12.5) 84-FBGA (9x12.5) 84-FBGA (9x12.5)

Related Product By Categories

M24C08-FCT6TP/T
M24C08-FCT6TP/T
STMicroelectronics
IC EEPROM 8KBIT I2C 4WLCSP
CAT24C08C4ATR
CAT24C08C4ATR
onsemi
IC EEPROM 8KBIT I2C 4WLCSP
M95010-RMN6TP
M95010-RMN6TP
STMicroelectronics
IC EEPROM 1KBIT SPI 20MHZ 8SO
M24C64-WDW6TP
M24C64-WDW6TP
STMicroelectronics
IC EEPROM 64KBIT I2C 1MHZ 8TSSOP
M95128-DRMN3TP/K
M95128-DRMN3TP/K
STMicroelectronics
IC EEPROM 128KBIT SPI 20MHZ 8SO
M27C512-12C1
M27C512-12C1
STMicroelectronics
IC EPROM 512KBIT PARALLEL 32PLCC
M29F010B45K1
M29F010B45K1
STMicroelectronics
IC FLASH 1MBIT PARALLEL 32PLCC
M29F200BT70N1
M29F200BT70N1
Micron Technology Inc.
IC FLASH 2MBIT PARALLEL 48TSOP
M24C04-FMB5TG
M24C04-FMB5TG
STMicroelectronics
IC EEPROM 4KBIT I2C 8UFDFPN
M25P40-VMN6YPB
M25P40-VMN6YPB
Micron Technology Inc.
IC FLASH 4MBIT SPI 75MHZ 8SO
M29W128GL7AZA6E
M29W128GL7AZA6E
Micron Technology Inc.
IC FLASH 128MBIT PARALLEL 64TBGA
FM25CL64B-GTR
FM25CL64B-GTR
Infineon Technologies
IC FRAM 64KBIT SPI 20MHZ 8SOIC

Related Product By Brand

MT29F2G01ABAGDWB-IT:G TR
MT29F2G01ABAGDWB-IT:G TR
Micron Technology Inc.
IC FLASH 2GBIT SPI 8UPDFN
MT40A1G16TB-062E:F
MT40A1G16TB-062E:F
Micron Technology Inc.
MOD DRAM 16GBIT PARALLEL 96FBGA
MT25QU512ABB1EW9-0SIT TR
MT25QU512ABB1EW9-0SIT TR
Micron Technology Inc.
IC FLASH 512MBIT SPI 8WPDFN
MT25QU02GCBB8E12-0SIT TR
MT25QU02GCBB8E12-0SIT TR
Micron Technology Inc.
IC FLSH 2GBIT SPI 133MHZ 24TPBGA
MT25QU512ABB1EW9-0SIT
MT25QU512ABB1EW9-0SIT
Micron Technology Inc.
IC FLASH 512MBIT SPI 8WPDFN
MT25QL256ABA1EW7-0SIT
MT25QL256ABA1EW7-0SIT
Micron Technology Inc.
IC FLASH 256MBIT SPI 8WPDFN
M29F800DT70N1T TR
M29F800DT70N1T TR
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 48TSOP
M29W160ET70ZA6F TR
M29W160ET70ZA6F TR
Micron Technology Inc.
IC FLASH 16MBIT PARALLEL 48TFBGA
M29W128GH70N6E
M29W128GH70N6E
Micron Technology Inc.
IC FLASH 128MBIT PARALLEL 56TSOP
NAND01GW3B2CN6E
NAND01GW3B2CN6E
Micron Technology Inc.
IC FLASH 1GBIT PARALLEL 48TSOP
M25P80-VMN3PB
M25P80-VMN3PB
Micron Technology Inc.
IC FLASH 8MBIT SPI 75MHZ 8SO
MT29F8G08ABABAWP-ITX:B
MT29F8G08ABABAWP-ITX:B
Micron Technology Inc.
IC FLASH 8GBIT PARALLEL 48TSOP I