Overview
The Adesto® AT45DB161E-SHD-T is a 16-Mbit serial-interface sequential access Flash memory, ideally suited for a wide variety of digital voice, image, program code, and data storage applications. This device operates with a single 2.3V to 3.6V or 2.5V to 3.6V power supply and is compatible with the Serial Peripheral Interface (SPI), supporting SPI modes 0 and 3, as well as RapidS™ operation for high-speed applications. The AT45DB161E features a dual SRAM buffer architecture, which enhances its efficiency for data logging and other sequential access needs.
Key Specifications
| Parameter | Value |
|---|---|
| Memory Capacity | 16 Mbits (17,301,504 bits) |
| Page Size | 512 bytes or 528 bytes (default) |
| Number of Pages | 4,096 pages |
| Supply Voltage | 2.3V to 3.6V or 2.5V to 3.6V |
| Interface | SPI compatible, supports SPI modes 0 and 3, RapidS™ operation |
| Clock Speed | Up to 85MHz, low-power read option up to 15MHz |
| Clock-to-output Time | 6ns maximum |
| SRAM Buffers | Two fully independent SRAM data buffers (512/528 bytes each) |
| Power Consumption | 3µA Deep Power-Down current, 25µA Standby current, 11mA Active Read current |
| Endurance | 100,000 program/erase cycles per page minimum |
| Data Retention | 20 years |
| Temperature Range | -40°C to +85°C |
| Package Options | 8-lead SOIC, 8-pad Ultra-thin DFN, 9-ball Ultra-thin UBGA |
Key Features
- Single 2.3V to 3.6V or 2.5V to 3.6V power supply
- SPI compatible, supports SPI modes 0 and 3, and RapidS™ operation
- Continuous read capability through entire array
- User configurable page size (512 bytes or 528 bytes)
- Two fully independent SRAM data buffers for receiving data while reprogramming the main memory array
- Flexible programming options including byte/page program
- Ultra-deep power down and low-power read options
- Comprehensive security and unique ID features
- Green (Pb/Halide-free/RoHS compliant) packaging options
Applications
The AT45DB161E is optimized for use in a variety of commercial and industrial applications, including:
- Digital voice and image storage
- Program code storage
- Data logging and sequential data storage
- Applications requiring high-speed operation and low power consumption
- Systems where high-density, low-pin count, and low-voltage operation are essential
Q & A
- What is the memory capacity of the AT45DB161E?
The AT45DB161E has a memory capacity of 16 Mbits (17,301,504 bits), organized as 4,096 pages of 512 bytes or 528 bytes each.
- What are the supported SPI modes for the AT45DB161E?
The AT45DB161E supports SPI modes 0 and 3, as well as RapidS™ operation.
- What is the operating voltage range for the AT45DB161E?
The device operates from a single 2.3V to 3.6V or 2.5V to 3.6V power supply.
- What is the maximum clock speed for the AT45DB161E?
The maximum clock speed is up to 85MHz, with a low-power read option up to 15MHz.
- How many SRAM buffers does the AT45DB161E have?
The AT45DB161E has two fully independent SRAM data buffers, each with a capacity of 512/528 bytes.
- What is the endurance of the AT45DB161E?
The device has an endurance of 100,000 program/erase cycles per page minimum.
- What is the data retention period for the AT45DB161E?
The data retention period is 20 years.
- What are the package options available for the AT45DB161E?
The device is available in 8-lead SOIC, 8-pad Ultra-thin DFN, and 9-ball Ultra-thin UBGA packages.
- Is the AT45DB161E RoHS compliant?
Yes, the AT45DB161E is RoHS compliant and available in green (Pb/Halide-free) packaging options.
- What are the typical power consumption values for the AT45DB161E?
The typical power consumption values are 3µA for Deep Power-Down, 25µA for Standby, and 11mA for Active Read.
