Overview
The AT45DB641E-SHN2B-T is a 64-Mbit serial flash memory device produced by Adesto Technologies. It is part of the System Enhancing class of code and data storage solutions, designed with an advanced dual SRAM buffer architecture. This device is optimized for high-density, low-pin count, low-voltage, and low-power applications, making it ideal for a wide variety of digital voice, image, program code, and data storage needs. The AT45DB641E operates from a single 1.7V to 3.6V power supply, supporting SPI modes 0 and 3, as well as RapidS™ operation for high-speed applications.
Key Specifications
| Parameter | Value |
|---|---|
| Memory Capacity | 64 Mbit (69,206,016 bits) |
| Memory Organization | 32,768 pages of 256/264 bytes each |
| Supply Voltage | 1.7V to 3.6V |
| Clock Frequency | Up to 85 MHz |
| Interface | Serial Peripheral Interface (SPI) compatible, supports SPI modes 0 and 3, RapidS™ operation |
| Package Options | 8-pad Ultra-thin DFN, 8-pad Very-thin DFN, 9-ball BGA, 44-ball dBGA, Die in Wafer Form |
| SRAM Buffers | Two SRAM buffers of 256/264 bytes each |
| Compliance | EU RoHS Compliant, China RoHS Compliant |
Key Features
- Controllable Dual R/W SRAM buffers for maximum flexibility
- Standard block architecture with added 256-byte page erase for energy-efficient data logging
- Byte-write provides Serial EEPROM functionality in a Serial NOR Flash device
- Extended Vcc operation allows the system memory to operate over the entire voltage range
- Ultra-deep power down mode for low power consumption
- Comprehensive security and unique ID features to protect the device from outside tampering
- Self-timed programming and erase cycles
- Simple sequential access via a 3-wire interface (SI, SO, SCK)
Applications
The AT45DB641E-SHN2B-T is suited for a wide range of applications, including:
- Digital voice and image storage
- Program code storage
- Data logging in various commercial and industrial environments
- Systems requiring high-density, low-pin count, low-voltage, and low-power memory solutions
Q & A
- What is the memory capacity of the AT45DB641E-SHN2B-T?
The AT45DB641E-SHN2B-T has a memory capacity of 64 Mbit, organized into 32,768 pages of 256/264 bytes each.
- What is the operating voltage range of the AT45DB641E-SHN2B-T?
The device operates from a single 1.7V to 3.6V power supply.
- What types of SPI modes does the AT45DB641E-SHN2B-T support?
The device supports SPI modes 0 and 3, as well as RapidS™ operation.
- What are the package options available for the AT45DB641E-SHN2B-T?
The device is available in 8-pad Ultra-thin DFN, 8-pad Very-thin DFN, 9-ball BGA, 44-ball dBGA, and Die in Wafer Form packages.
- Does the AT45DB641E-SHN2B-T have any SRAM buffers?
Yes, the device includes two SRAM buffers of 256/264 bytes each.
- Is the AT45DB641E-SHN2B-T compliant with RoHS regulations?
Yes, the device is EU RoHS Compliant and China RoHS Compliant.
- What is the maximum clock frequency of the AT45DB641E-SHN2B-T?
The maximum clock frequency is up to 85 MHz.
- How does the AT45DB641E-SHN2B-T handle programming and erase cycles?
All programming and erase cycles are self-timed.
- What security features does the AT45DB641E-SHN2B-T offer?
The device includes comprehensive security and unique ID features to protect against outside tampering.
- What is the purpose of the dual SRAM buffers in the AT45DB641E-SHN2B-T?
The dual SRAM buffers enhance flexibility, allow for interleaving to increase continuous data stream writing, and can be used as additional system scratch pad memory or for E2PROM emulation.
