MT53D512M32D2DS-053 AAT ES:D
  • Share:

Micron Technology Inc. MT53D512M32D2DS-053 AAT ES:D

Manufacturer No:
MT53D512M32D2DS-053 AAT ES:D
Manufacturer:
Micron Technology Inc.
Package:
Tray
Description:
IC SDRAM LPDDR4 16GBIT 512MX32 F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MT53D512M32D2DS-053 AAT ES:D TR is a high-performance memory IC produced by Micron Technology Inc. This component is part of the LPDDR4 family, designed to meet the demanding requirements of modern portable and automotive applications. It offers low power consumption and high data transfer rates, making it an ideal choice for devices that require efficient memory solutions.

Key Specifications

Parameter Value Parameter Value
Series Automotive, AEC-Q100 Product Status Active
Programmable Not Verified Memory Type Volatile
Memory Format DRAM Technology SDRAM - Mobile LPDDR4
Memory Size 16Gbit Memory Organization 512M x 32
Clock Frequency 1.866 GHz Voltage - Supply 1.1V
Operating Temperature -40°C ~ 105°C (TC) Mounting Type Surface Mount
Base Product Number MT53D512 Package/Case 200-WFBGA

Key Features

  • Low Power Consumption: Designed to minimize power usage, making it suitable for battery-powered devices.
  • High Data Transfer Rate: Operates at a clock frequency of 1.866 GHz, ensuring fast data transfer.
  • Wide Operating Temperature Range: Can operate in temperatures ranging from -40°C to 105°C, making it robust for various environments.
  • Compact Packaging: Uses a 200-WFBGA package, which is compact and suitable for space-constrained designs.
  • AEC-Q100 Qualified: Meets the stringent requirements of the automotive industry, ensuring reliability and durability.

Applications

  • Automotive Systems: Ideal for use in automotive infotainment systems, navigation, and other in-vehicle applications due to its AEC-Q100 qualification.
  • Portable Devices: Suitable for smartphones, tablets, and other mobile devices where low power consumption and high performance are critical.
  • Industrial Systems: Can be used in industrial control systems, IoT devices, and other applications requiring reliable and efficient memory solutions.

Q & A

  1. Q: What is the MT53D512M32D2DS-053 AAT ES:D TR used for?

    A: This component is used as a high-performance memory solution in various applications including automotive systems, portable devices, and industrial systems.

  2. Q: What is the clock frequency of the MT53D512M32D2DS-053 AAT ES:D TR?

    A: The clock frequency is 1.866 GHz.

  3. Q: What is the operating temperature range of the MT53D512M32D2DS-053 AAT ES:D TR?

    A: The operating temperature range is -40°C to 105°C.

  4. Q: What type of packaging does the MT53D512M32D2DS-053 AAT ES:D TR use?

    A: It uses a 200-WFBGA package.

  5. Q: Is the MT53D512M32D2DS-053 AAT ES:D TR AEC-Q100 qualified?

    A: Yes, it is AEC-Q100 qualified, making it suitable for automotive applications.

  6. Q: How can I ensure the authenticity of the MT53D512M32D2DS-053 AAT ES:D TR?

    A: Ensure you purchase from authorized distributors who rigorously test and verify the credentials of original Micron Technology Inc. manufacturers and authorized agents.

  7. Q: What is the warranty period for the MT53D512M32D2DS-053 AAT ES:D TR?

    A: The warranty period is typically 1 year, covering defects in materials and workmanship under normal use.

  8. Q: How do I return or replace a defective MT53D512M32D2DS-053 AAT ES:D TR?

    A: Defects must be reported within 365 days of delivery. The product must be unused and in its original packaging. Obtain Return Authorization from the supplier before returning the product.

  9. Q: Where can I find detailed information about the MT53D512M32D2DS-053 AAT ES:D TR?

    A: Detailed information, including datasheets and application notes, can be found on the Micron Technology Inc. website or through authorized distributors.

  10. Q: What is the memory size and organization of the MT53D512M32D2DS-053 AAT ES:D TR?

    A: The memory size is 16Gbit, organized as 512M x 32.

Product Attributes

Memory Type:Volatile
Memory Format:DRAM
Technology:SDRAM - Mobile LPDDR4
Memory Size:16Gb (512M x 32)
Memory Interface:- 
Clock Frequency:1.866 GHz
Write Cycle Time - Word, Page:- 
Access Time:- 
Voltage - Supply:1.1V
Operating Temperature:-40°C ~ 105°C (TC)
Mounting Type:Surface Mount
Package / Case:200-WFBGA
Supplier Device Package:200-WFBGA (10x14.5)
0 Remaining View Similar

In Stock

-
370

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X/AA
DD15S2S5WV5X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD62M3200T0/AA
DD62M3200T0/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S2S5WV5X
DD15S2S5WV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V3S
DD15S200V3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S100E20/AA
CBC46W4S100E20/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S2S500X/AA
DD26S2S500X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V30
DD26S2S0V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X/AA
DD26S2S50V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X
DD26S2S50V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S500X
DD44S32S500X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

MT29F8G08ABACAWP-IT:C
MT29F8G08ABACAWP-IT:C
Micron Technology Inc.
IC FLASH 8GBIT PARALLEL 48TSOP I
M24C32-DRMF3TG/K
M24C32-DRMF3TG/K
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8MLP
PCF85103C-2T/00118
PCF85103C-2T/00118
NXP USA Inc.
256 X 8-BIT EEPROM WITH I2C
MT40A1G8SA-075:E
MT40A1G8SA-075:E
Micron Technology Inc.
IC DRAM 8GBIT PARALLEL 78FBGA
MT29F2G01ABAGDWB-IT:G
MT29F2G01ABAGDWB-IT:G
Micron Technology Inc.
IC FLASH 2GBIT SPI 8UPDFN
M27C1001-10F1
M27C1001-10F1
STMicroelectronics
IC EPROM 1MBIT PARALLEL 32CDIP
M27C512-12B1
M27C512-12B1
STMicroelectronics
IC EPROM 512KBIT PARALLEL 28DIP
M25P10-AVMN6P
M25P10-AVMN6P
Micron Technology Inc.
IC FLASH 1MBIT SPI 50MHZ 8SO
M27C256B-70C6
M27C256B-70C6
STMicroelectronics
IC EPROM 256KBIT PARALLEL 32PLCC
M25P32-VME6G
M25P32-VME6G
Micron Technology Inc.
IC FLASH 32MBIT SPI 75MHZ 8VDFPN
MT41K256M16HA-125 M AIT:E
MT41K256M16HA-125 M AIT:E
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA
DS2431P+W
DS2431P+W
Analog Devices Inc./Maxim Integrated
IC EEPROM 1KBIT 1-WIRE 6TSOC

Related Product By Brand

MTFC32GAPALBH-IT
MTFC32GAPALBH-IT
Micron Technology Inc.
IC FLASH 256GBIT MMC 153TFBGA
MT40A512M16LY-062E IT:E
MT40A512M16LY-062E IT:E
Micron Technology Inc.
IC DRAM 8GBIT PARALLEL 96FBGA
MT41K128M16JT-125 XIT:K TR
MT41K128M16JT-125 XIT:K TR
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
M28W320FCB70N6F TR
M28W320FCB70N6F TR
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 48TSOP
M29W320EB70N6F TR
M29W320EB70N6F TR
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 48TSOP
M29W800DB70ZE6F TR
M29W800DB70ZE6F TR
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 48TFBGA
M25P32-VMW6TG TR
M25P32-VMW6TG TR
Micron Technology Inc.
IC FLASH 32MBIT SPI 75MHZ 8SO
MT41K256M16HA-125 M AIT:E TR
MT41K256M16HA-125 M AIT:E TR
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA
MT48LC16M16A2P-6A:G
MT48LC16M16A2P-6A:G
Micron Technology Inc.
IC DRAM 256MBIT PAR 54TSOP II
M25P40-VMB6TPB TR
M25P40-VMB6TPB TR
Micron Technology Inc.
IC FLASH 4MBIT SPI 75MHZ 8UFDFPN
MT47H64M16NF-25E IT:M
MT47H64M16NF-25E IT:M
Micron Technology Inc.
IC DRAM 1GBIT PARALLEL 84FBGA
MT29F2G08ABAEAWP-E:E
MT29F2G08ABAEAWP-E:E
Micron Technology Inc.
IC FLASH 2GBIT PARALLEL 48TSOP I