MT53D512M32D2DS-053 AAT ES:D
  • Share:

Micron Technology Inc. MT53D512M32D2DS-053 AAT ES:D

Manufacturer No:
MT53D512M32D2DS-053 AAT ES:D
Manufacturer:
Micron Technology Inc.
Package:
Tray
Description:
IC SDRAM LPDDR4 16GBIT 512MX32 F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MT53D512M32D2DS-053 AAT ES:D TR is a high-performance memory IC produced by Micron Technology Inc. This component is part of the LPDDR4 family, designed to meet the demanding requirements of modern portable and automotive applications. It offers low power consumption and high data transfer rates, making it an ideal choice for devices that require efficient memory solutions.

Key Specifications

Parameter Value Parameter Value
Series Automotive, AEC-Q100 Product Status Active
Programmable Not Verified Memory Type Volatile
Memory Format DRAM Technology SDRAM - Mobile LPDDR4
Memory Size 16Gbit Memory Organization 512M x 32
Clock Frequency 1.866 GHz Voltage - Supply 1.1V
Operating Temperature -40°C ~ 105°C (TC) Mounting Type Surface Mount
Base Product Number MT53D512 Package/Case 200-WFBGA

Key Features

  • Low Power Consumption: Designed to minimize power usage, making it suitable for battery-powered devices.
  • High Data Transfer Rate: Operates at a clock frequency of 1.866 GHz, ensuring fast data transfer.
  • Wide Operating Temperature Range: Can operate in temperatures ranging from -40°C to 105°C, making it robust for various environments.
  • Compact Packaging: Uses a 200-WFBGA package, which is compact and suitable for space-constrained designs.
  • AEC-Q100 Qualified: Meets the stringent requirements of the automotive industry, ensuring reliability and durability.

Applications

  • Automotive Systems: Ideal for use in automotive infotainment systems, navigation, and other in-vehicle applications due to its AEC-Q100 qualification.
  • Portable Devices: Suitable for smartphones, tablets, and other mobile devices where low power consumption and high performance are critical.
  • Industrial Systems: Can be used in industrial control systems, IoT devices, and other applications requiring reliable and efficient memory solutions.

Q & A

  1. Q: What is the MT53D512M32D2DS-053 AAT ES:D TR used for?

    A: This component is used as a high-performance memory solution in various applications including automotive systems, portable devices, and industrial systems.

  2. Q: What is the clock frequency of the MT53D512M32D2DS-053 AAT ES:D TR?

    A: The clock frequency is 1.866 GHz.

  3. Q: What is the operating temperature range of the MT53D512M32D2DS-053 AAT ES:D TR?

    A: The operating temperature range is -40°C to 105°C.

  4. Q: What type of packaging does the MT53D512M32D2DS-053 AAT ES:D TR use?

    A: It uses a 200-WFBGA package.

  5. Q: Is the MT53D512M32D2DS-053 AAT ES:D TR AEC-Q100 qualified?

    A: Yes, it is AEC-Q100 qualified, making it suitable for automotive applications.

  6. Q: How can I ensure the authenticity of the MT53D512M32D2DS-053 AAT ES:D TR?

    A: Ensure you purchase from authorized distributors who rigorously test and verify the credentials of original Micron Technology Inc. manufacturers and authorized agents.

  7. Q: What is the warranty period for the MT53D512M32D2DS-053 AAT ES:D TR?

    A: The warranty period is typically 1 year, covering defects in materials and workmanship under normal use.

  8. Q: How do I return or replace a defective MT53D512M32D2DS-053 AAT ES:D TR?

    A: Defects must be reported within 365 days of delivery. The product must be unused and in its original packaging. Obtain Return Authorization from the supplier before returning the product.

  9. Q: Where can I find detailed information about the MT53D512M32D2DS-053 AAT ES:D TR?

    A: Detailed information, including datasheets and application notes, can be found on the Micron Technology Inc. website or through authorized distributors.

  10. Q: What is the memory size and organization of the MT53D512M32D2DS-053 AAT ES:D TR?

    A: The memory size is 16Gbit, organized as 512M x 32.

Product Attributes

Memory Type:Volatile
Memory Format:DRAM
Technology:SDRAM - Mobile LPDDR4
Memory Size:16Gb (512M x 32)
Memory Interface:- 
Clock Frequency:1.866 GHz
Write Cycle Time - Word, Page:- 
Access Time:- 
Voltage - Supply:1.1V
Operating Temperature:-40°C ~ 105°C (TC)
Mounting Type:Surface Mount
Package / Case:200-WFBGA
Supplier Device Package:200-WFBGA (10x14.5)
0 Remaining View Similar

In Stock

-
370

Please send RFQ , we will respond immediately.

Same Series
RD15S10HT0/AA
RD15S10HT0/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10HE2X/AA
RD15S10HE2X/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10HE20/AA
RD15S10HE20/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20WTS/AA
DD15S20WTS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20JV3S
DD15S20JV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JV5S
DD15S20JV5S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE2S/AA
CBC13W3S10HE2S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S200E30/AA
DD26S200E30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HV50/AA
DD26S10HV50/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50V30
DD26S2S50V30
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

MX25L6406EM2I-12G
MX25L6406EM2I-12G
Macronix
IC FLASH 64MBIT SPI 86MHZ 8SOP
MT41K512M8DA-107:P
MT41K512M8DA-107:P
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 78FBGA
24LC128T-I/SN
24LC128T-I/SN
Microchip Technology
IC EEPROM 128KBIT I2C 8SOIC
SST26VF064BT-104I/SM
SST26VF064BT-104I/SM
Microchip Technology
IC FLASH 64MBIT SPI/QUAD 8SOIJ
M29F200BT70N1
M29F200BT70N1
Micron Technology Inc.
IC FLASH 2MBIT PARALLEL 48TSOP
M29F400BB70N6E
M29F400BB70N6E
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 48TSOP
M29F800DB70N6T TR
M29F800DB70N6T TR
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 48TSOP
M29W160EB70N3F TR
M29W160EB70N3F TR
Micron Technology Inc.
IC FLASH 16MBIT PARALLEL 48TSOP
M29W128GL70ZS3E
M29W128GL70ZS3E
Micron Technology Inc.
IC FLASH 128MBIT PARALLEL 64FBGA
N25Q128A13EF740F TR
N25Q128A13EF740F TR
Micron Technology Inc.
IC FLASH 128MBIT SPI 8VDFPN
SST26VF032BT-104I/SM70SVAO
SST26VF032BT-104I/SM70SVAO
Microchip Technology
IC FLASH 32MBIT SPI/QUAD 8SOIJ
MTFC16GAPALBH-IT TR
MTFC16GAPALBH-IT TR
Micron Technology Inc.
IC FLASH 128GBIT MMC 153TFBGA

Related Product By Brand

MT25QL512ABB8E12-0AAT
MT25QL512ABB8E12-0AAT
Micron Technology Inc.
IC FLASH 512MBIT SPI 24TPBGA
MT25QL512ABB8ESF-0AAT TR
MT25QL512ABB8ESF-0AAT TR
Micron Technology Inc.
IC FLASH 512MBIT SPI 133MHZ 16SO
MT40A1G16TB-062E:F
MT40A1G16TB-062E:F
Micron Technology Inc.
MOD DRAM 16GBIT PARALLEL 96FBGA
MT41K256M16TW-107 AUT:P TR
MT41K256M16TW-107 AUT:P TR
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA
M29F400BB70N6E
M29F400BB70N6E
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 48TSOP
M29W320DB70ZE6F TR
M29W320DB70ZE6F TR
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 48TFBGA
M29W128GL70ZA6E
M29W128GL70ZA6E
Micron Technology Inc.
IC FLASH 128MBIT PARALLEL 64TBGA
NAND512W3A2CZA6E
NAND512W3A2CZA6E
Micron Technology Inc.
IC FLSH 512MBIT PARALLEL 63VFBGA
M29W160EB70N3E
M29W160EB70N3E
Micron Technology Inc.
IC FLASH 16MBIT PARALLEL 48TSOP
M25P40-VMW6GB
M25P40-VMW6GB
Micron Technology Inc.
IC FLASH 4MBIT SPI 75MHZ 8SO W
MT41K256M16TW-107 AT:P
MT41K256M16TW-107 AT:P
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA
MT40A512M16LY-062E AT:E TR
MT40A512M16LY-062E AT:E TR
Micron Technology Inc.
IC FLASH 8GBIT 1.6GHZ 96FBGA