MT53D512M32D2DS-053 AAT ES:D
  • Share:

Micron Technology Inc. MT53D512M32D2DS-053 AAT ES:D

Manufacturer No:
MT53D512M32D2DS-053 AAT ES:D
Manufacturer:
Micron Technology Inc.
Package:
Tray
Description:
IC SDRAM LPDDR4 16GBIT 512MX32 F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MT53D512M32D2DS-053 AAT ES:D TR is a high-performance memory IC produced by Micron Technology Inc. This component is part of the LPDDR4 family, designed to meet the demanding requirements of modern portable and automotive applications. It offers low power consumption and high data transfer rates, making it an ideal choice for devices that require efficient memory solutions.

Key Specifications

Parameter Value Parameter Value
Series Automotive, AEC-Q100 Product Status Active
Programmable Not Verified Memory Type Volatile
Memory Format DRAM Technology SDRAM - Mobile LPDDR4
Memory Size 16Gbit Memory Organization 512M x 32
Clock Frequency 1.866 GHz Voltage - Supply 1.1V
Operating Temperature -40°C ~ 105°C (TC) Mounting Type Surface Mount
Base Product Number MT53D512 Package/Case 200-WFBGA

Key Features

  • Low Power Consumption: Designed to minimize power usage, making it suitable for battery-powered devices.
  • High Data Transfer Rate: Operates at a clock frequency of 1.866 GHz, ensuring fast data transfer.
  • Wide Operating Temperature Range: Can operate in temperatures ranging from -40°C to 105°C, making it robust for various environments.
  • Compact Packaging: Uses a 200-WFBGA package, which is compact and suitable for space-constrained designs.
  • AEC-Q100 Qualified: Meets the stringent requirements of the automotive industry, ensuring reliability and durability.

Applications

  • Automotive Systems: Ideal for use in automotive infotainment systems, navigation, and other in-vehicle applications due to its AEC-Q100 qualification.
  • Portable Devices: Suitable for smartphones, tablets, and other mobile devices where low power consumption and high performance are critical.
  • Industrial Systems: Can be used in industrial control systems, IoT devices, and other applications requiring reliable and efficient memory solutions.

Q & A

  1. Q: What is the MT53D512M32D2DS-053 AAT ES:D TR used for?

    A: This component is used as a high-performance memory solution in various applications including automotive systems, portable devices, and industrial systems.

  2. Q: What is the clock frequency of the MT53D512M32D2DS-053 AAT ES:D TR?

    A: The clock frequency is 1.866 GHz.

  3. Q: What is the operating temperature range of the MT53D512M32D2DS-053 AAT ES:D TR?

    A: The operating temperature range is -40°C to 105°C.

  4. Q: What type of packaging does the MT53D512M32D2DS-053 AAT ES:D TR use?

    A: It uses a 200-WFBGA package.

  5. Q: Is the MT53D512M32D2DS-053 AAT ES:D TR AEC-Q100 qualified?

    A: Yes, it is AEC-Q100 qualified, making it suitable for automotive applications.

  6. Q: How can I ensure the authenticity of the MT53D512M32D2DS-053 AAT ES:D TR?

    A: Ensure you purchase from authorized distributors who rigorously test and verify the credentials of original Micron Technology Inc. manufacturers and authorized agents.

  7. Q: What is the warranty period for the MT53D512M32D2DS-053 AAT ES:D TR?

    A: The warranty period is typically 1 year, covering defects in materials and workmanship under normal use.

  8. Q: How do I return or replace a defective MT53D512M32D2DS-053 AAT ES:D TR?

    A: Defects must be reported within 365 days of delivery. The product must be unused and in its original packaging. Obtain Return Authorization from the supplier before returning the product.

  9. Q: Where can I find detailed information about the MT53D512M32D2DS-053 AAT ES:D TR?

    A: Detailed information, including datasheets and application notes, can be found on the Micron Technology Inc. website or through authorized distributors.

  10. Q: What is the memory size and organization of the MT53D512M32D2DS-053 AAT ES:D TR?

    A: The memory size is 16Gbit, organized as 512M x 32.

Product Attributes

Memory Type:Volatile
Memory Format:DRAM
Technology:SDRAM - Mobile LPDDR4
Memory Size:16Gb (512M x 32)
Memory Interface:- 
Clock Frequency:1.866 GHz
Write Cycle Time - Word, Page:- 
Access Time:- 
Voltage - Supply:1.1V
Operating Temperature:-40°C ~ 105°C (TC)
Mounting Type:Surface Mount
Package / Case:200-WFBGA
Supplier Device Package:200-WFBGA (10x14.5)
0 Remaining View Similar

In Stock

-
370

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10HV50/AA
CBC13W3S10HV50/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10H0S/AA
CBC9W4S10H0S/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20WV5S
DD15S20WV5S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HV5S/AA
CBC9W4S10HV5S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S50V3X/AA
DD26S2S50V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X/AA
DD26S2S0V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V30/AA
DD26S2S50V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S600X
DD44S32S600X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE30
DD26S20WE30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE30/AA
DD26S20WE30/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

M29F800FB5AN6F2
M29F800FB5AN6F2
Alliance Memory, Inc.
IC FLASH 8MBIT PARALLEL 48TSOP
CAT24C256WI-GT3
CAT24C256WI-GT3
onsemi
IC EEPROM 256KBIT I2C 1MHZ 8SOIC
MX25L6433FM2I-08G
MX25L6433FM2I-08G
Macronix
IC FLASH 64MBIT SPI/QUAD 8SOP
M24C04-DRMN3TP/K
M24C04-DRMN3TP/K
STMicroelectronics
IC EEPROM 4KBIT I2C 1MHZ 8SO
M27C512-70C6
M27C512-70C6
STMicroelectronics
IC EPROM 512KBIT PARALLEL 32PLCC
M24128-BWMN6P
M24128-BWMN6P
STMicroelectronics
IC EEPROM 128KBIT I2C 1MHZ 8SO
M29F080D70N6E
M29F080D70N6E
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 40TSOP
M29W320DB70N6F TR
M29W320DB70N6F TR
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 48TSOP
CAT25080YI-GT3JN
CAT25080YI-GT3JN
onsemi
IC EEPROM 8KBIT SPI 20MHZ 8TSSOP
MT41K256M16HA-125 AAT:E
MT41K256M16HA-125 AAT:E
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA
MTFC32GAPALBH-AIT ES
MTFC32GAPALBH-AIT ES
Micron Technology Inc.
IC FLASH 256GBIT MMC 153TFBGA
PCA24S08AD,118
PCA24S08AD,118
NXP USA Inc.
IC EEPROM 8KBIT I2C 400KHZ 8SO

Related Product By Brand

MT25QL512ABB8ESF-0SIT TR
MT25QL512ABB8ESF-0SIT TR
Micron Technology Inc.
IC FLASH 512MBIT SPI 16SOP2
MT41K512M16VRP-107 AIT:P TR
MT41K512M16VRP-107 AIT:P TR
Micron Technology Inc.
IC DRAM 8GB DDR3 PARALLEL 96TFBG
MT53E512M32D1ZW-046 WT:B
MT53E512M32D1ZW-046 WT:B
Micron Technology Inc.
IC DRAM 16GBIT 2.133GHZ 200WFBGA
MT53D1024M32D4DT-046 WT:D
MT53D1024M32D4DT-046 WT:D
Micron Technology Inc.
IC DRAM 32GBIT 2.133GHZ 200VFBGA
MT53D1024M32D4DT-046 AIT:D
MT53D1024M32D4DT-046 AIT:D
Micron Technology Inc.
IC DRAM 32GBIT 2133MHZ 200VFBGA
M29W320DB70N6E
M29W320DB70N6E
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 48TSOP
M29F040B70K6
M29F040B70K6
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 32PLCC
M29F800DB70N6F TR
M29F800DB70N6F TR
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 48TSOP
M25P64-VME6TG TR
M25P64-VME6TG TR
Micron Technology Inc.
IC FLASH 64MBIT SPI 50MHZ 8VDFPN
M25P80-VMC6TG TR
M25P80-VMC6TG TR
Micron Technology Inc.
IC FLASH 8MBIT SPI 75MHZ 8UFDFPN
NAND512W3A2SN6F TR
NAND512W3A2SN6F TR
Micron Technology Inc.
IC FLASH 512MBIT PARALLEL 48TSOP
MT29F512G08CMCEBJ4-37ITRES:E
MT29F512G08CMCEBJ4-37ITRES:E
Micron Technology Inc.
IC MLC 256G 32GX8 VBGA 132VBGA