MT29F512G08CMCEBJ4-37ITRES:E
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Micron Technology Inc. MT29F512G08CMCEBJ4-37ITRES:E

Manufacturer No:
MT29F512G08CMCEBJ4-37ITRES:E
Manufacturer:
Micron Technology Inc.
Package:
Tray
Description:
IC MLC 256G 32GX8 VBGA 132VBGA
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The MT29F512G08CMCEBJ4-37ITRES:E TR is a high-capacity NAND flash memory chip manufactured by Micron Technology Inc. This component is part of Micron's MLC (Multi-Level Cell) NAND flash memory family, designed to provide robust storage solutions for various applications. The device features a 512Gb storage capacity, organized as 64G x 8, and is packaged in a 132-pin Very Fine Pitch Ball Grid Array (VBGA) package. It is RoHS compliant and lead-free, ensuring environmental sustainability and regulatory compliance.

Key Specifications

SpecificationValue
Part NumberMT29F512G08CMCEBJ4-37ITRES:E TR
ManufacturerMicron Technology Inc.
Memory TypeNon-Volatile
Memory FormatFLASH - NAND (MLC)
Memory Size512Gb (64G x 8)
Memory InterfaceParallel
Clock Frequency267 MHz
Voltage - Supply2.7V ~ 3.6V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case132-VBGA

Key Features

  • High Storage Capacity: Offers 512Gb of storage, making it suitable for applications requiring large data storage.
  • MLC NAND Technology: Provides a balance between performance and cost, making it ideal for a wide range of applications.
  • Parallel Interface: Supports high-speed data transfer with a clock frequency of 267 MHz.
  • Wide Operating Temperature Range: Operates reliably from -40°C to 85°C, making it suitable for various environmental conditions.
  • RoHS Compliant and Lead-Free: Ensures environmental sustainability and regulatory compliance.

Applications

The MT29F512G08CMCEBJ4-37ITRES:E TR is versatile and can be used in a variety of applications, including:

  • Consumer Electronics: Smartphones, tablets, and other portable devices.
  • Industrial Systems: Embedded systems, IoT devices, and industrial control systems.
  • Automotive Systems: Infotainment systems, navigation systems, and other automotive electronics.
  • Enterprise Storage: Solid-state drives (SSDs), data centers, and cloud storage solutions.

Q & A

  1. What is the storage capacity of the MT29F512G08CMCEBJ4-37ITRES:E TR? The storage capacity is 512Gb, organized as 64G x 8.
  2. What type of memory technology does this component use? It uses MLC (Multi-Level Cell) NAND flash memory technology.
  3. What is the interface type of this memory chip? It has a parallel interface.
  4. What is the clock frequency of this component? The clock frequency is 267 MHz.
  5. What is the operating temperature range of this component? It operates from -40°C to 85°C.
  6. Is the MT29F512G08CMCEBJ4-37ITRES:E TR RoHS compliant? Yes, it is RoHS compliant and lead-free.
  7. What is the package type of this component? It is packaged in a 132-pin Very Fine Pitch Ball Grid Array (VBGA).
  8. What are some common applications for this memory chip? It is used in consumer electronics, industrial systems, automotive systems, and enterprise storage solutions.
  9. How do I obtain the datasheet for this component? You can obtain the datasheet from authorized distributors or directly from Micron Technology Inc.'s website after completing the necessary access forms.
  10. Is there a warranty provided for this component? Yes, authorized distributors often provide a warranty, typically up to 1 year, depending on the distributor's policies.

Product Attributes

Memory Type:Non-Volatile
Memory Format:Flash
Technology:FLASH - NAND (MLC)
Memory Size:512Gb (64G x 8)
Memory Interface:Parallel
Clock Frequency:267 MHz
Write Cycle Time - Word, Page:- 
Access Time:- 
Voltage - Supply:2.7V ~ 3.6V
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:132-VBGA
Supplier Device Package:132-VBGA (12x18)
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